公开(公告)号：US20140175587A1

公开(公告)日：2014-06-26

申请号：US13876521

申请日：2011-09-28

申请人： Nicholas Ekins-Daukes ,  Chrisopher Clement Phillips

发明人： Nicholas Ekins-Daukes ,  Chrisopher Clement Phillips

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L31/0232 ,  B82Y20/00 ,  H01L31/035236 ,  H01L31/18

摘要： A light-absorbing device and method employ a series of photon-absorbing semiconductor substructures. A first semiconductor substructure provides first and second energy states. A difference between the first and second states being such as to cause an electron to be promoted from the first state to the second state upon absorption of a photon of a first energy. A second semiconductor substructure provides third and fourth energy states. The third state is arranged to receive the electron from the second state. A difference between the third and fourth states being such as to cause the electron to be promoted from the third state to the fourth state upon absorption of a subsequent photon of a second energy. The third state has a lower energy than the second state, such as to cause the electron to dissipate energy as it passes from the second state to the third state.

摘要翻译： 光吸收装置和方法采用一系列光子吸收半导体子结构。 第一半导体子结构提供第一和第二能量状态。 第一和第二状态之间的差异是在吸收第一能量的光子时使电子从第一状态促进到第二状态。 第二个半导体子结构提供第三和第四能量状态。 第三状态被布置成从第二状态接收电子。 第三状态和第四状态之间的差异是在吸收第二能量的后续光子时使得电子从第三状态促进到第四状态。 第三状态具有比第二状态低的能量，例如当电子从第二状态传递到第三状态时使电子耗散能量。