公开(公告)号：US20130097452A1

公开(公告)日：2013-04-18

申请号：US13326344

申请日：2011-12-15

Applicant: Chun-Lin Cheng ,  Yun-Chieh Sung ,  Kai-Chieh Hsu ,  Yu-Wei Tsao

Inventor： Chun-Lin Cheng ,  Yun-Chieh Sung ,  Kai-Chieh Hsu ,  Yu-Wei Tsao

IPC: G06F1/14

CPC classification number: G06F1/14 ,  G06F1/24

Abstract: A computer apparatus and a resetting method for a real time clock (RTC) of the computer apparatus are provided. The resetting method for the RTC includes: generating a judging result by determining whether the computer apparatus is in an S5 state and determining whether a plurality of pre-determined keys are simultaneously pressed; pulling down a resume reset signal according to the judging result and correspondingly pulling down an operating voltage; pulling down an S5 enabling signal after pulling down the operating voltage for a pre-determined delay time; generating an RTC reset signal for resetting the RTC after pulling down the S5 enabling signal is pulled down.

Abstract translation: 提供了一种用于计算机装置的实时时钟（RTC）的计算机装置和复位方法。 RTC的复位方法包括：通过确定计算机设备是否处于S5状态并确定是否同时按下多个预定密钥来产生判断结果; 根据判断结果下拉恢复复位信号，并相应地降低工作电压; 在将工作电压拉低预定的延迟时间后，拉下S5使能信号; 产生用于在下拉S5使能信号之后复位RTC的RTC复位信号被拉下。

公开(公告)号：US5834815A

公开(公告)日：1998-11-10

申请号：US686135

申请日：1996-07-23

Applicant: Shen-Wen Cheng ,  Chun-Lin Cheng

Inventor： Shen-Wen Cheng ,  Chun-Lin Cheng

IPC: H01L27/11

CPC classification number: H01L27/1112 ,  Y10S257/904

Abstract: A layout structure for improving a polysilicon load resistor which has a uniform high resistance is disclosed. A polysilicon film is used as the high resistance load element so that the film has a relatively high resistance. However, the resistance of these resistors often varies. This variation can be up to two orders of magnitude. The non-uniform resistance is caused by hydrogen penetration into the polysilicon resistor. The solution of the present is to layout the SRAM cell so that the polysilicon resistor is completely covered by one of these subsequent layers. In the present invention, the polysilicon resistor is partially covered by different layers, such as a subsequent metal layer or polysilicon layer.

Abstract translation: 公开了一种用于改善具有均匀高电阻的多晶硅负载电阻器的布局结构。 使用多晶硅膜作为高电阻负载元件，使得该膜具有较高的电阻。 然而，这些电阻的电阻通常是变化的。 这种变化可以达到两个数量级。 不均匀的电阻是由氢渗透到多晶硅电阻器中引起的。 本发明的解决方案是布置SRAM单元，使得多晶硅电阻被这些后续层之一完全覆盖。 在本发明中，多晶硅电阻器被不同的层部分覆盖，例如随后的金属层或多晶硅层。

公开(公告)号：US08850175B2

公开(公告)日：2014-09-30

申请号：US13326344

申请日：2011-12-15

Applicant: Chun-Lin Cheng ,  Yun-Chieh Sung ,  Kai-Chieh Hsu ,  Yu-Wei Tsao

Inventor： Chun-Lin Cheng ,  Yun-Chieh Sung ,  Kai-Chieh Hsu ,  Yu-Wei Tsao

IPC: G06F1/24 ,  G06F1/14

CPC classification number: G06F1/14 ,  G06F1/24

Abstract: A computer apparatus and a resetting method for a real time clock (RTC) of the computer apparatus are provided. The resetting method for the RTC includes: generating a judging result by determining whether the computer apparatus is in an S5 state and determining whether a plurality of pre-determined keys are simultaneously pressed; pulling down a resume reset signal according to the judging result and correspondingly pulling down an operating voltage; pulling down an S5 enabling signal after pulling down the operating voltage for a pre-determined delay time; generating an RTC reset signal for resetting the RTC after pulling down the S5 enabling signal is pulled down.

Abstract translation: 提供了一种用于计算机装置的实时时钟（RTC）的计算机装置和复位方法。 RTC的复位方法包括：通过确定计算机设备是否处于S5状态并确定是否同时按下多个预定密钥来产生判断结果; 根据判断结果下拉恢复复位信号，并相应地降低工作电压; 在将工作电压拉低预定的延迟时间后，拉下S5使能信号; 产生用于在下拉S5使能信号之后复位RTC的RTC复位信号被拉下。

公开(公告)号：US20090090214A1

公开(公告)日：2009-04-09

申请号：US12244849

申请日：2008-10-03

Applicant: Chun-Lin Cheng

Inventor： Chun-Lin Cheng

IPC: B22F9/20

CPC classification number: B22F9/24 ,  B22F1/0014

Abstract: A method for forming nano-scale metal particles by a novel reducing agent is described. The method can be carried out at room temperature and under an atmospheric environment by relatively simple processes to prepare nano-scale metal particles with a diameter less than 20 nm. This method comprises the following steps. At first, a first blending process is performed to blend a metal salt and a first solvent together to form a first solution. Then, a second blending process is performed to blend a reducing agent and a second solvent together to form a second solution. The reducing agent comprises one compound selected from the group consisting of the following or combination thereof: boron-containing hydride and boron-containing hydrocarbon. Following that, a third blending process is performed to blend the first solution and the second solution together to form a third solution. Finally, the reducing agent is used to reduce the metal salt in the third solution to form the nano-scale metal particles. In addition, if a dispersing agent is added after the nano-scale metal particles are formed, the nano-scale metal particles can have a particle diameter less than 10 nm.

Abstract translation: 描述了通过新的还原剂形成纳米级金属颗粒的方法。 该方法可以通过相对简单的方法在室温和大气环境下进行，以制备直径小于20nm的纳米级金属颗粒。 该方法包括以下步骤。 首先，进行第一共混方法以将金属盐和第一溶剂共混以形成第一溶液。 然后，进行第二共混处理以将还原剂和第二溶剂共混以形成第二溶液。 还原剂包含一种选自下列物质或其组合的化合物：含硼氢化物和含硼烃。 之后，进行第三混合过程以将第一溶液和第二溶液共混以形成第三溶液。 最后，还原剂用于还原第三溶液中的金属盐以形成纳米级金属颗粒。 此外，如果在形成纳米级金属颗粒之后添加分散剂，则纳米级金属颗粒的粒径可以小于10nm。

公开(公告)号：US06858123B1

公开(公告)日：2005-02-22

申请号：US10070000

申请日：2000-08-25

Applicant: Jung-Chih Hu ,  Wu-Chun Gau ,  Ting-Chang Chang ,  Ming-Shiann Feng ,  Chun-Lin Cheng ,  You-Shin Lin ,  Ying-Hao Li ,  Lih-Juann Chen

Inventor： Jung-Chih Hu ,  Wu-Chun Gau ,  Ting-Chang Chang ,  Ming-Shiann Feng ,  Chun-Lin Cheng ,  You-Shin Lin ,  Ying-Hao Li ,  Lih-Juann Chen

IPC: C25D3/38 ,  C25D7/12 ,  H01L21/28 ,  H01L21/288 ,  C23C18/00

CPC classification number: C25D3/38

Abstract: The invention relates to a novel galvanizing solution for the galvanic deposition of copper. Hydroxylamine sulfate or hydroxylamine hydrochloride are utilized as addition reagents and added to the galvanizing solution during the galvanic deposition of copper which is used in the manufacture of semiconductors.

Abstract translation: 本发明涉及一种用于铜的电沉积的新型镀锌溶液。 使用硫酸羟胺或盐酸羟胺作为添加剂，并在用于制造半导体的铜的电沉积期间加入到镀锌溶液中。

公开(公告)号：US5728615A

公开(公告)日：1998-03-17

申请号：US683367

申请日：1996-07-18

Applicant: Shen-Wen Cheng ,  Chun-Lin Cheng

Inventor： Shen-Wen Cheng ,  Chun-Lin Cheng

IPC: H01L21/8244 ,  H01L27/11 ,  H01L21/8234

CPC classification number: H01L27/11 ,  H01L27/1112

Abstract: A method of manufacturing a polysilicon resistor which has a uniform high resistance includes a thermal process to increase the hydrogen concentration uniformity in the polysilicon resistor. The thermal step increases the diffusion of the hydrogen into and out of the third polysilicon, thereby helping to equalize the hydrogen concentration within the polysilicon resistor. The more uniform hydrogen concentration causes the resistance of the polysilicon resistor to be more uniform.

Abstract translation: 制造具有均匀高电阻的多晶硅电阻器的方法包括增加多晶硅电阻器中的氢浓度均匀性的热处理。 热步骤增加氢气进出第三多晶硅的扩散，从而有助于均衡多晶硅电阻器内的氢浓度。 更均匀的氢浓度导致多晶硅电阻器的电阻更均匀。