公开(公告)号：US5604350A

公开(公告)日：1997-02-18

申请号：US558494

申请日：1995-11-16

Applicant: Chung-Hua Chu

Inventor： Chung-Hua Chu

IPC: H01J27/02 ,  H01J27/00

CPC classification number: H01J27/022 ,  H01J2237/08 ,  H01J2237/31701

Abstract: An improved ion source assembly in an ion implant machine is provided that can withstand thermal stress and remain gas leak proof. The ion source assembly is comprised of a vaporizer with a tubular conduit at one end, a fitting, and an arc chamber. The improvement being leak-proof connections: (1) between the conduit and the fitting and (2) between the fitting and an arc chamber. The fitting has a chamber through the center. The chamber has a larger diameter at the back end than at the front end and a central tapered portion connecting the front end and back end portions. The conduit is fit into the back end of the chamber thereby forming a first gas leak proof connection. The fitting has an outer tapered from end portion and the arc chamber has a tapered opening. The tapered front end of the fitting engages the tapered opening of the arc chamber forming a second gas leak proof connection thereby providing a gas leak proof ion source assembly.

Abstract translation: 提供了一种离子注入机器中改进的离子源组件，可以承受热应力并保持防漏气。 离子源组件包括在一端具有管状导管的蒸发器，配件和电弧室。 改进是防漏连接：（1）导管和配件之间以及（2）配件和电弧室之间。 配件有通过中心的室。 该腔室在后端具有比前端更大的直径和连接前端部和后端部分的中心锥形部分。 导管配合到室的后端，从而形成第一气体泄漏连接。 配件具有从端部部分的外锥形，并且电弧室具有锥形开口。 配件的锥形前端接合电弧室的锥形开口形成第二气体泄漏连接，由此提供防气体泄漏离子源组件。

公开(公告)号：US5534752A

公开(公告)日：1996-07-09

申请号：US507534

申请日：1995-07-26

Applicant: Chung Hua-Chu

Inventor： Chung Hua-Chu

IPC: H01J37/30 ,  H01J37/08

CPC classification number: H01J37/3002 ,  H01J2237/04 ,  H01J2237/31701

Abstract: An improved shutter activating mechanism for an ion implantation apparatus, used to implant ions into semiconductor wafers, is described. The apparatus has an ion source, an ion accelerator, an ion beam shutter, and an ion beam shaping plate system. The improvement consists of a improved shutter activating mechanism with a rotatable shaft fixed to the ion beam shutter, a cross bar fed to the rotatable shaft, a abutment surface for limiting rotational movement of the cross bar, and a driving solenoid provided with a push rod. A bifurcated element is fixed to the end of the push rod which has aligned transverse apertures, a link joining the bifurcated element and the push rod, the link having an aperture on one end, a bearing assembly to allow limited axial movement, an a first pin through the transverse aperture and the bearing assembly. The link has a bifurcated end with transverse aperture. A second pin provides a connection between the bifurcated end of the link and the cross bar.

Abstract translation: 描述了用于将离子注入到半导体晶片中的用于离子注入装置的改进的快门启动机构。 该装置具有离子源，离子加速器，离子束快门和离子束成形板系统。 该改进包括改进的快门启动机构，其中可旋转的轴固定到离子束快门，供给到可旋转轴的横杆，用于限制横杆的旋转运动的邻接表面，以及设置有推杆 。 分叉元件被固定到推杆的具有对准的横向孔的端部，连接分叉元件和推杆的连杆，连杆在一端具有孔，轴承组件允许有限的轴向移动，第一 穿过横向孔和轴承组件。 该连杆具有横向孔的分叉端。 第二个引脚提供链路的分叉端和横杆之间的连接。