公开(公告)号：US4816183A

公开(公告)日：1989-03-28

申请号：US898918

申请日：1986-08-21

申请人： Clayton W. Bates, Jr.

发明人： Clayton W. Bates, Jr.

IPC分类号： H01J1/78 ,  H01J29/45 ,  H01L31/0216 ,  H01B1/06 ,  H01C13/00

CPC分类号： H01L31/02162 ,  H01J1/78 ,  H01J29/45 ,  H01L31/0216

摘要： A composite photosensitive material of enhanced sensitivity to, and absorption of, incident radiation, wherein an array of particles of an electrically conducting material is embedded in and dispersed through a semiconducting matrix transparent to the wavelengths of interest, the particles having sizes of from about 1 to about 100 nanometers and having volume fractions of at least about 10 percent. The composite material is usable in photosensitive device applications such as detectors, photocells, photodiodes, and vidicons. Sensitivity to infrared radiation is particularly high where the matrix has a dielectric constant of at least about 10. The preferred particle material for enhanced infrared sensitivity is silver or gold, and the preferred matrix is silicon of CuInSe.sub.2.

摘要翻译： 一种对入射辐射具有增强的敏感性和吸收性的复合感光材料，其中导电材料的颗粒阵列嵌入并通过对感兴趣的波长透明的半导体基质分散，所述颗粒的尺寸为约1 至约100纳米，体积分数为至少约10％。 该复合材料可用于光敏器件应用中，例如检测器，光电管，光电二极管和栅极。 当基质具有至少约10的介电常数时，对红外辐射的敏感度特别高。用于提高红外灵敏度的优选颗粒材料是银或金，优选的基质是CuInSe 2的硅。

公开(公告)号：US20110180807A1

公开(公告)日：2011-07-28

申请号：US12695188

申请日：2010-01-28

申请人： Clayton W. Bates, JR.

发明人： Clayton W. Bates, JR.

IPC分类号： H01L31/028

CPC分类号： H01L31/035209 ,  H01J1/34 ,  H01J31/49 ,  H01L31/108

摘要： An infrared external photoemissive detector can have an n-p heterojunction comprising an n-type semiconductor layer and a p-layer; the n-layer semiconductor comprising doped silicon embedded with nanoparticles forming Schottky barriers; and the p-layer is a p-type diamond film. The nanoparticles can be about 20-30 atomic percentage metal particles (such as silver) having an average particle size of about 5-10 nm. The p-layer can have a surface layer that has a negative electron affinity. The n-layer can be in the range of about 3 μm to 10 μm thick, and preferably about 3 μm thick. The doped silicon can be doped with elements selected from the list consisting of phosphorus and antimony.

摘要翻译： 红外外部发光检测器可以具有包括n型半导体层和p层的n-p异质结; 所述n层半导体包括掺杂有形成肖特基势垒的纳米颗粒的掺杂硅; p层是p型金刚石膜。 纳米颗粒可以是平均粒度约5-10nm的约20-30原子百分数的金属颗粒（例如银）。 p层可以具有具有负电子亲和力的表面层。 n层可以在约3μm至10μm厚的范围内，优选约3μm厚。 掺杂的硅可掺杂有选自磷和锑的元素。

公开(公告)号：US08154028B2

公开(公告)日：2012-04-10

申请号：US12695188

申请日：2010-01-28

申请人： Clayton W. Bates, Jr.

发明人： Clayton W. Bates, Jr.

IPC分类号： H01L29/15

CPC分类号： H01L31/035209 ,  H01J1/34 ,  H01J31/49 ,  H01L31/108

摘要： An infrared external photoemissive detector can have an n-p heterojunction comprising an n-type semiconductor layer and a p-layer; the n-layer semiconductor comprising doped silicon embedded with nanoparticles forming Schottky barriers; and the p-layer is a p-type diamond film. The nanoparticles can be about 20-30 atomic percentage metal particles (such as silver) having an average particle size of about 5-10 nm. The p-layer can have a surface layer that has a negative electron affinity. The n-layer can be in the range of about 3 μm to 10 μm thick, and preferably about 3 μm thick. The doped silicon can be doped with elements selected from the list consisting of phosphorus and antimony.

摘要翻译： 红外外部发光检测器可以具有包含n型半导体层和p层的n-p异质结; 所述n层半导体包括掺杂有形成肖特基势垒的纳米颗粒的掺杂硅; p层是p型金刚石膜。 纳米颗粒可以是平均粒度约5-10nm的约20-30原子百分数的金属颗粒（例如银）。 p层可以具有具有负电子亲和力的表面层。 n层可以在约3μm至10μm厚的范围内，优选约3μm厚。 掺杂的硅可掺杂有选自磷和锑的元素。