公开(公告)号：US20160163492A1

公开(公告)日：2016-06-09

申请号：US14908893

申请日：2013-07-31

申请人： CERN - EUROPEAN ORGANIZATION FOR NUCLEAR RESEARCH

发明人： Philippe Breuil ,  Vladimir Peskov ,  Paolo Martinengo

IPC分类号： H01J1/34 ,  H01J1/78 ,  G08B17/12 ,  G01J1/42

CPC分类号： H01J1/34 ,  G01J1/429 ,  G08B17/12 ,  H01J1/78 ,  H01J29/38 ,  H01J31/49 ,  H01J40/16

摘要： An electron filtering layer placed on a photocathode of a UV light detector allows to selectively filter out electrons generated from a photoconversion of long wavelengths. The filter may be tuned by selecting the material and the thickness of the electron filtering layer. By means of the filtering layer, background noise due to visible parts of the spectrum may be efficiently suppressed. Applications of the invention include a solar-blind flame and/or smoke detector.

摘要翻译： 放置在UV光检测器的光电阴极上的电子过滤层允许选择性地滤出由长波长的光转换产生的电子。 可以通过选择电子过滤层的材料和厚度来调节过滤器。 通过滤波层，可以有效地抑制由于频谱的可见部分引起的背景噪声。 本发明的应用包括太阳能盲焰和/或烟雾探测器。

公开(公告)号：US07176625B2

公开(公告)日：2007-02-13

申请号：US10969319

申请日：2004-10-21

申请人： Tomoko Mochizuki ,  Minoru Niigaki ,  Toru Hirohata ,  Kuniyoshi Mori

发明人： Tomoko Mochizuki ,  Minoru Niigaki ,  Toru Hirohata ,  Kuniyoshi Mori

IPC分类号： H01J40/06

CPC分类号： H01J1/34 ,  H01J1/78 ,  H01J43/08 ,  H01J2231/50

摘要： Provided are a photocathode plate capable of stably achieving a high sensitive property, and an electron tube using such a photocathode plate.In a photomultiplier tube 1, an insulating layer 63 is formed between a semiconductor electron emission layer 51 in a photocathode plate 23A, and a first electrode 65 electrically connected to an electron releasing portion 59. This insulating layer 63 permits the photocathode plate 23A to be cleaned by heat cleaning at a high temperature, in a stage before formation of an active layer 61 on an exposed region of the semiconductor electron emission layer 51 in the electron releasing portion 59. This makes it feasible to effectively clean the exposed region of the semiconductor electron emission layer 51 in the electron releasing portion 59 and to stabilize the physical properties of the exposed region. In consequence, a higher sensitive property can be stably achieved in the photocathode plate 23A and in the photomultiplier tube 1 using the photocathode plate 23A.

摘要翻译： 提供能够稳定地实现高灵敏度的光电阴极板和使用这种光电阴极板的电子管。 在光电倍增管1中，在光电阴极板23A中的半导体电子发射层51和与电子释放部分59电连接的第一电极65之间形成绝缘层63。 该绝缘层63允许在电子释放部分59中的半导体电子发射层51的暴露区域上形成有源层61之前的阶段，通过在高温下的热清洗来清洁光电阴极板23A。 这使得有效地清洁电子释放部分59中的半导体电子发射层51的暴露区域并且稳定暴露区域的物理性能是可行的。 因此，在光电阴极板23A和使用光电阴极板23A的光电倍增管1中可以稳定地实现更高的敏感性。

公开(公告)号：US4839511A

公开(公告)日：1989-06-13

申请号：US149707

申请日：1988-01-29

申请人： James C. Thompson ,  Uzi J. Even ,  Chi-Woo Kim

发明人： James C. Thompson ,  Uzi J. Even ,  Chi-Woo Kim

IPC分类号： H01J1/34 ,  H01J1/78 ,  H01J9/12 ,  H01J29/36

CPC分类号： H01J29/36 ,  H01J1/34 ,  H01J1/78 ,  H01J9/12 ,  H01J9/233 ,  H01J2201/3425

摘要： A photoconductive member is provided with increased sensitivity to radiation incident thereupon and with increased photo-yield in response thereto by means of a multi-layered, sandwich-type construction based upon the provision of successive layers of sensitizing material over corresponding successive layers of conducting material. The photoconductive member comprises at least two composite layers formed one above the other on an insulating substrate, each composite layer comprising a first layer of material capable of conducting charge and a second layer of material comprising polar molecules disposed upon the charge-conducting material layer in such a manner that successive layers of polar molecules are adsorbed and retained in an oriented fashion on successive layers of the charge-conducting material. In combination, the alternating layers of charge-conducting material and polar molecules increase photo-yield in response to a given quantum of incident radiation and also increase the range of wavelength of incident radiation to which the photoconductive member is responsive. The sandwich-type construction permits photoconductor sensitivity to be increased as a function of the number of layers of conducting material and polar molecules used to form the photoconductive surface. The multi-layered construction also exhibits reduced sensitivity to the degrading effects of impurities, is adapted to convenient fabrication, and exhibits extended lifetime.

摘要翻译： 光电导元件被提供对其入射的辐射的增加的灵敏度，并且通过基于在相应的连续的导电材料层上提供连续的敏化材料层的多层夹层结构，响应于此而增加的光产率 。 光电导元件包括至少两层复合层，绝缘基板上形成一层复合层，每个复合层包括能够导电的第一层材料和第二层材料，该第二层材料包含位于导电材料层上的极性分子 这样一种方式使连续的极性分子层被吸附并以取向形式保持在导电材料的连续层上。 组合地，电荷传导材料和极性分子的交替层响应于给定的入射辐射量而增加光产率，并且还增加光电导元件响应的入射辐射的波长范围。 夹层结构允许光电导体灵敏度随着用于形成光导表面的导电材料和极性分子的层数的增加而增加。 多层结构对于杂质的降解效果也表现出降低的敏感性，适于方便的制造，并且具有延长的使用寿命。

公开(公告)号：US4816183A

公开(公告)日：1989-03-28

申请号：US898918

申请日：1986-08-21

申请人： Clayton W. Bates, Jr.

发明人： Clayton W. Bates, Jr.

IPC分类号： H01J1/78 ,  H01J29/45 ,  H01L31/0216 ,  H01B1/06 ,  H01C13/00

CPC分类号： H01L31/02162 ,  H01J1/78 ,  H01J29/45 ,  H01L31/0216

摘要： A composite photosensitive material of enhanced sensitivity to, and absorption of, incident radiation, wherein an array of particles of an electrically conducting material is embedded in and dispersed through a semiconducting matrix transparent to the wavelengths of interest, the particles having sizes of from about 1 to about 100 nanometers and having volume fractions of at least about 10 percent. The composite material is usable in photosensitive device applications such as detectors, photocells, photodiodes, and vidicons. Sensitivity to infrared radiation is particularly high where the matrix has a dielectric constant of at least about 10. The preferred particle material for enhanced infrared sensitivity is silver or gold, and the preferred matrix is silicon of CuInSe.sub.2.

摘要翻译： 一种对入射辐射具有增强的敏感性和吸收性的复合感光材料，其中导电材料的颗粒阵列嵌入并通过对感兴趣的波长透明的半导体基质分散，所述颗粒的尺寸为约1 至约100纳米，体积分数为至少约10％。 该复合材料可用于光敏器件应用中，例如检测器，光电管，光电二极管和栅极。 当基质具有至少约10的介电常数时，对红外辐射的敏感度特别高。用于提高红外灵敏度的优选颗粒材料是银或金，优选的基质是CuInSe 2的硅。

公开(公告)号：US20160203938A1

公开(公告)日：2016-07-14

申请号：US15076556

申请日：2016-03-21

申请人： David Lewis Adler

发明人： David Lewis Adler

IPC分类号： H01J1/78 ,  H01L27/02 ,  H01L23/498 ,  G21K7/00

CPC分类号： G21K1/00 ,  G01N23/04 ,  G01N2223/1006 ,  G01N2223/611 ,  G21K7/00 ,  H01J1/78 ,  H01L23/49827 ,  H01L27/0203

摘要： An apparatus is disclosed for the examination and inspection of integrated devices such as integrated circuits. X-rays are transmitted through the integrated device, and are incident on a photoemissive structure that absorbs x-rays and emits electrons. The electrons emitted by the photoemissive structure are shaped by an electron optical system to form a magnified image of the emitted electrons on a detector. This magnified image is then recorded and processed.For some embodiments of the invention, the photoemissive structure is deposited directly onto the integrated device. In some embodiments, the incidence angle of the x-rays is varied to allow internal three-dimensional structures of the integrated device to be determined. In other embodiments, the recorded image is compared with a reference data to enable inspection for manufacturing quality control.

摘要翻译： 公开了用于集成电路等集成装置的检查和检查的装置。 X射线通过集成器件传输，入射到吸收x射线并发射电子的光发射结构上。 由发光结构发射的电子通过电子光学系统成形，以在检测器上形成发射电子的放大图像。 然后记录和处理该放大的图像。 对于本发明的一些实施例，光发射结构直接沉积在集成器件上。 在一些实施例中，X射线的入射角度被改变以允许确定集成器件的内部三维结构。 在其他实施例中，将记录的图像与参考数据进行比较，以使得能够进行制造质量控制的检查。

公开(公告)号：US20060038473A1

公开(公告)日：2006-02-23

申请号：US10969319

申请日：2004-10-21

申请人： Tomoko Mochizuki ,  Minoru Niigaki ,  Toru Hirohata ,  Kuniyoshi Mori

发明人： Tomoko Mochizuki ,  Minoru Niigaki ,  Toru Hirohata ,  Kuniyoshi Mori

IPC分类号： H01J31/00 ,  H01J31/26 ,  H01J40/06

CPC分类号： H01J1/34 ,  H01J1/78 ,  H01J43/08 ,  H01J2231/50

摘要： Provided are a photocathode plate capable of stably achieving a high sensitive property, and an electron tube using such a photocathode plate. In a photomultiplier tube 1, an insulating layer 63 is formed between a semiconductor electron emission layer 51 in a photocathode plate 23A, and a first electrode 65 electrically connected to an electron releasing portion 59. This insulating layer 63 permits the photocathode plate 23A to be cleaned by heat cleaning at a high temperature, in a stage before formation of an active layer 61 on an exposed region of the semiconductor electron emission layer 51 in the electron releasing portion 59. This makes it feasible to effectively clean the exposed region of the semiconductor electron emission layer 51 in the electron releasing portion 59 and to stabilize the physical properties of the exposed region. In consequence, a higher sensitive property can be stably achieved in the photocathode plate 23A and in the photomultiplier tube 1 using the photocathode plate 23A.

摘要翻译： 提供能够稳定地实现高灵敏度的光电阴极板和使用这种光电阴极板的电子管。 在光电倍增管1中，在光电阴极板23A中的半导体电子发射层51和与电子释放部分59电连接的第一电极65之间形成绝缘层63。 该绝缘层63允许在电子释放部分59中的半导体电子发射层51的暴露区域上形成有源层61之前的阶段，通过在高温下的热清洗来清洁光电阴极板23A。 这使得有效地清洁电子释放部分59中的半导体电子发射层51的暴露区域并且稳定暴露区域的物理性能是可行的。 因此，在光电阴极板23A和使用光电阴极板23A的光电倍增管1中可以稳定地实现更高的敏感性。

公开(公告)号：US09291578B2

公开(公告)日：2016-03-22

申请号：US13507895

申请日：2012-08-03

申请人： David L. Adler

发明人： David L. Adler

IPC分类号： G21K7/00 ,  G01N23/04

CPC分类号： G21K1/00 ,  G01N23/04 ,  G01N2223/1006 ,  G01N2223/611 ,  G21K7/00 ,  H01J1/78 ,  H01L23/49827 ,  H01L27/0203

摘要： An apparatus is disclosed for the examination and inspection of integrated devices such as integrated circuits. X-rays are transmitted through the integrated device, and are incident on a photoemissive structure that absorbs x-rays and emits electrons. The electrons emitted by the photoemissive structure are shaped by an electron optical system to form a magnified image of the emitted electrons on a detector. This magnified image is then recorded and processed. In some embodiments, the integrated device and photoemissive structure are independently mounted and controlled. In other embodiments, the photoemissive device is deposited directly onto the integrated device. In some embodiments, the incidence angle of the x-rays is varied to allow internal three-dimensional structures of the integrated device to be determined. In other embodiments, the recorded image is compared with a reference data to enable inspection for manufacturing quality control.

摘要翻译： 公开了用于集成电路等集成装置的检查和检查的装置。 X射线通过集成器件传输，入射到吸收x射线并发射电子的光发射结构上。 由发光结构发射的电子通过电子光学系统成形，以在检测器上形成发射电子的放大图像。 然后记录和处理该放大的图像。 在一些实施例中，集成装置和光发射结构被独立地安装和控制。 在其他实施例中，光发射器件直接沉积在集成器件上。 在一些实施例中，X射线的入射角度被改变以允许确定集成器件的内部三维结构。 在其他实施例中，将记录的图像与参考数据进行比较，以使得能够进行制造质量控制的检查。

公开(公告)号：US20140037052A1

公开(公告)日：2014-02-06

申请号：US13507895

申请日：2012-08-03

申请人： David L. Adler

发明人： David L. Adler

IPC分类号： G21K7/00 ,  H01L23/48 ,  G21K1/00

CPC分类号： G21K1/00 ,  G01N23/04 ,  G01N2223/1006 ,  G01N2223/611 ,  G21K7/00 ,  H01J1/78 ,  H01L23/49827 ,  H01L27/0203

摘要： An apparatus is disclosed for the examination and inspection of integrated devices such as integrated circuits. X-rays are transmitted through the integrated device, and are incident on a photoemissive structure that absorbs x-rays and emits electrons. The electrons emitted by the photoemissive structure are shaped by an electron optical system to form a magnified image of the emitted electrons on a detector. This magnified image is then recorded and processed.In some embodiments, the integrated device and photoemissive structure are independently mounted and controlled. In other embodiments, the photoemissive device is deposited directly onto the integrated device.In some embodiments, the incidence angle of the x-rays is varied to allow internal three-dimensional structures of the integrated device to be determined. In other embodiments, the recorded image is compared with a reference data to enable inspection for manufacturing quality control.

摘要翻译： 公开了用于集成电路等集成装置的检查和检查的装置。 X射线通过集成器件传输，入射到吸收x射线并发射电子的光发射结构上。 由发光结构发射的电子通过电子光学系统成形，以在检测器上形成发射电子的放大图像。 然后记录和处理该放大的图像。 在一些实施例中，集成装置和光发射结构被独立地安装和控制。 在其他实施例中，光发射器件直接沉积在集成器件上。 在一些实施例中，X射线的入射角度被改变以允许确定集成器件的内部三维结构。 在其他实施例中，将记录的图像与参考数据进行比较，以使得能够进行制造质量控制的检查。

公开(公告)号：US4099198A

公开(公告)日：1978-07-04

申请号：US686374

申请日：1976-05-14

申请人： Jonathan Ross Howorth ,  Peter James Pool

发明人： Jonathan Ross Howorth ,  Peter James Pool

IPC分类号： H01J1/78 ,  H01J9/12 ,  H01J29/38 ,  H01L27/14

CPC分类号： H01J29/38 ,  H01J1/78 ,  H01J9/12

摘要： The input surface of a photocathode consisting of a membrane of p-type silicon is modified to improve it's sensitivity. The p-type concentration is locally increased and the surface is coated with silicon nitride.

摘要翻译： 修改由p型硅膜构成的光电阴极的输入表面以提高其灵敏度。 p型浓度局部增加，表面涂有氮化硅。