公开(公告)号：US06232196B1

公开(公告)日：2001-05-15

申请号：US09264167

申请日：1999-03-05

申请人： Ivo Raaijmakers ,  Christopher François Lilian Pomarède ,  Cornelius Alexander van der Jengd ,  Alexander Gschwandtner ,  Andreas Grassl

发明人： Ivo Raaijmakers ,  Christopher François Lilian Pomarède ,  Cornelius Alexander van der Jengd ,  Alexander Gschwandtner ,  Andreas Grassl

IPC分类号： H01L2120

CPC分类号： C23C16/45504 ,  C23C16/045 ,  C23C16/24 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/45591 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/28525 ,  H01L21/28556 ,  H01L21/76877 ,  H01L29/66181 ,  H01L29/78

摘要： A method is disclosed for depositing silicon with high deposition rates and good step coverage. The process is performed at high pressures, including close to atmospheric pressures, at temperatures of greater than about 650° C. Silane and hydrogen are flowed over a substrate in a single-wafer chamber. Advantageously, the process maintains good step coverage and high deposition rates (e.g., greater that 50 nn/min) even when dopant gases are added to the process, resulting in commercially practicable rates of deposition for conductive silicon. Despite the high deposition rates, step coverage is sufficient to deposit polysilicon into extremely deep trenches and vias with aspect ratios as high as 40:1, filling such structures without forming voids or keyholes.

摘要翻译： 公开了一种用于沉积具有高沉积速率和良好的台阶覆盖率的硅的方法。 该方法在大于约650℃的温度下在高压（包括接近大气压）下进行。硅烷和氢气在单晶片室中流过衬底。 有利的是，即使将掺杂剂气体加入到该方法中，该方法保持良好的阶梯覆盖率和高的沉积速率（例如，大于50nn / min），从而导致商业上可行的导电硅沉积速率。 尽管沉积速率高，但步长覆盖足以将多晶硅沉积到具有高达40:1的纵横比的极深沟槽和通孔中，填充这种结构而不形成空隙或键孔。