公开(公告)号：US06232196B1

公开(公告)日：2001-05-15

申请号：US09264167

申请日：1999-03-05

申请人： Ivo Raaijmakers ,  Christopher François Lilian Pomarède ,  Cornelius Alexander van der Jengd ,  Alexander Gschwandtner ,  Andreas Grassl

发明人： Ivo Raaijmakers ,  Christopher François Lilian Pomarède ,  Cornelius Alexander van der Jengd ,  Alexander Gschwandtner ,  Andreas Grassl

IPC分类号： H01L2120

CPC分类号： C23C16/45504 ,  C23C16/045 ,  C23C16/24 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/45591 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/28525 ,  H01L21/28556 ,  H01L21/76877 ,  H01L29/66181 ,  H01L29/78

摘要： A method is disclosed for depositing silicon with high deposition rates and good step coverage. The process is performed at high pressures, including close to atmospheric pressures, at temperatures of greater than about 650° C. Silane and hydrogen are flowed over a substrate in a single-wafer chamber. Advantageously, the process maintains good step coverage and high deposition rates (e.g., greater that 50 nn/min) even when dopant gases are added to the process, resulting in commercially practicable rates of deposition for conductive silicon. Despite the high deposition rates, step coverage is sufficient to deposit polysilicon into extremely deep trenches and vias with aspect ratios as high as 40:1, filling such structures without forming voids or keyholes.

摘要翻译： 公开了一种用于沉积具有高沉积速率和良好的台阶覆盖率的硅的方法。 该方法在大于约650℃的温度下在高压（包括接近大气压）下进行。硅烷和氢气在单晶片室中流过衬底。 有利的是，即使将掺杂剂气体加入到该方法中，该方法保持良好的阶梯覆盖率和高的沉积速率（例如，大于50nn / min），从而导致商业上可行的导电硅沉积速率。 尽管沉积速率高，但步长覆盖足以将多晶硅沉积到具有高达40:1的纵横比的极深沟槽和通孔中，填充这种结构而不形成空隙或键孔。

公开(公告)号：US06566271B1

公开(公告)日：2003-05-20

申请号：US09671827

申请日：2000-09-27

申请人： Alexander Gschwandtner ,  Gudrun Innertsberger ,  Andreas Grassl ,  Barbara Fröschle ,  Martin Kerber ,  Alexander Mattheus

发明人： Alexander Gschwandtner ,  Gudrun Innertsberger ,  Andreas Grassl ,  Barbara Fröschle ,  Martin Kerber ,  Alexander Mattheus

IPC分类号： H01L21302

CPC分类号： H01L21/02046 ,  H01L21/306

摘要： Fluorine is deposited on a semiconductor substrate surface according to a novel process. A semiconductor substrate is placed in a reaction chamber and the substrate surface is wetted with water and/or alcohol. A compound containing fluorine is led to the substrate surface, so that a cleaned semiconductor surface covered with fluorine is produced, and the compound containing fluorine is removed from the reaction chamber. The cleaned semiconductor surface covered with fluorine is then wetted with a mixture containing at least 10% by volume of water and at least 10% by volume of alcohol, for producing a cleaned semiconductor surface covered with a predetermined amount of fluorine. The predetermined amount of fluorine is lower the higher a proportion of water in the mixture is chosen to be. Then, the water and the alcohol are removed from the semiconductor surface.

摘要翻译： 根据新颖的方法将氟沉积在半导体衬底表面上。 将半导体衬底放置在反应室中，并用水和/或醇润湿衬底表面。 含有氟的化合物被引导到基板表面，从而产生被氟覆盖的清洁的半导体表面，并且从反应室中除去含氟化合物。 然后用含有至少10体积％水和至少10体积％醇的混合物润湿被氟覆盖的清洁的半导体表面，以产生用预定量的氟覆盖的清洁的半导体表面。 选择混合物中水的比例越高，预定量的氟越低。 然后，从半导体表面除去水和醇。