Memory cell structure integrated on semiconductor
    1.
    发明授权
    Memory cell structure integrated on semiconductor 有权
    存储单元结构集成在半导体上

    公开(公告)号:US06772992B1

    公开(公告)日:2004-08-10

    申请号:US09701768

    申请日:2000-11-30

    CPC classification number: H01L29/7882 H01L29/792

    Abstract: This invention relates to a memory cell which comprises a capacitor having a first electrode and a second electrode separated by a dielectric layer. Such dielectric layer comprises a layer of a semi-insulating material which is fully enveloped by an insulating material and in which an electric charge is permanently present or trapped therein. Such electric charge accumulated close to the first or to the second electrode, depending on the electric field between the electrodes, thereby defining different logic levels.

    Abstract translation: 本发明涉及一种存储单元,其包括具有第一电极和由电介质层隔开的第二电极的电容器。 这种电介质层包括半绝缘材料层,其被绝缘材料完全包围,其中电荷永久存在或被俘获在其中。 取决于电极之间的电场,这种电荷积聚在第一或第二电极附近,由此限定不同的逻辑电平。

Patent Agency Ranking