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1.发明授权
公开(公告)号：US5721162A
公开(公告)日：1998-02-24
申请号：US552401
申请日：1995-11-03
CPC分类号： B81C1/00246 , G01P15/0802
摘要： A motion sensor including a sensing wafer with a bulk micromachined sensing element, and a capping wafer on which is formed the conditioning circuitry for the sensor. The sensing and capping wafers are configured such that, when bonded together, the capping wafer encloses the sensing element to form a monolithic sensor. The capping wafer is further configured to expose bond pads on the sensing wafer, and to enable singulation of the two-wafer stack into individual dies. Wire bonds can be made to both wafers, such that the sensor can be packaged in essentially any way desired.
摘要翻译： 一种运动传感器，其包括具有体微加工感测元件的感测晶片和封盖晶片，其上形成有用于传感器的调节电路。 感测和封盖晶片被配置成使得当结合在一起时，封盖晶片包围感测元件以形成单片传感器。 封盖晶片还被配置为暴露感测晶片上的接合焊盘，并且使得能够将双晶片堆叠单独化成单个管芯。 可以对两个晶片进行引线键合，使得传感器可以基本上以任何所需的方式被封装。
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公开(公告)号：US08482090B2
公开(公告)日：2013-07-09
申请号：US12837033
申请日：2010-07-15
IPC分类号： H01L31/115
CPC分类号： H01J29/39 , H01J9/233 , H01J31/48 , H01L27/14658
摘要： Charged particle sensing devices and methods of forming charged particle sensing devices are provided. The charged particle sensing device includes a source of charged particles, a plurality of collector electrodes for receiving a first portion of the charged particles and a grid formed around and spaced apart from the plurality of collector electrodes. The grid receives a second portion of the charged particles and directs backscattered charged particles, generated responsive to the second portion, to adjacent collector electrodes.
摘要翻译： 提供了带电粒子感测装置和形成带电粒子感测装置的方法。 带电粒子感测装置包括带电粒子源，用于接收带电粒子的第一部分的多个收集电极和形成在多个集电极周围并与其间隔开的格栅。 栅格接收带电粒子的第二部分，并将响应于第二部分产生的反向散射带电粒子引导到相邻的集电极。
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公开(公告)号：US20120012958A1
公开(公告)日：2012-01-19
申请号：US12837033
申请日：2010-07-15
IPC分类号： H01L31/18
CPC分类号： H01J29/39 , H01J9/233 , H01J31/48 , H01L27/14658
摘要： Charged particle sensing devices and methods of forming charged particle sensing devices are provided. The charged particle sensing device includes a source of charged particles, a plurality of collector electrodes for receiving a first portion of the charged particles and a grid formed around and spaced apart from the plurality of collector electrodes. The grid receives a second portion of the charged particles and directs backscattered charged particles, generated responsive to the second portion, to adjacent collector electrodes.
摘要翻译： 提供了带电粒子感测装置和形成带电粒子感测装置的方法。 带电粒子感测装置包括带电粒子源，用于接收带电粒子的第一部分的多个收集电极和形成在多个集电极周围并与其间隔开的格栅。 栅格接收带电粒子的第二部分，并将响应于第二部分产生的反向散射带电粒子引导到相邻的集电极。
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公开(公告)号：US5936164A
公开(公告)日：1999-08-10
申请号：US917974
申请日：1997-08-27
申请人： Douglas Ray Sparks , William J Baney , Steven Edward Staller , Dan Wesley Chilcott , James Werstler Siekkinen
发明人： Douglas Ray Sparks , William J Baney , Steven Edward Staller , Dan Wesley Chilcott , James Werstler Siekkinen
CPC分类号： G01L9/0073
摘要： An all-silicon monolithic capacitive absolute pressure-sensing device and method for making the same. The device employs a single-crystal silicon diaphragm that serves at a flexible capacitor plate of a variable capacitor. The diaphragm is bonded to a single-crystal silicon wafer to overlie a cavity etched into the wafer. A fixed capacitor plate of the variable capacitor is formed by a heavily-doped region at the bottom of the cavity. A thin dielectric layer is grown on the fixed capacitor plate to complete the capacitor. The cavity has a minimal depth such that the fixed capacitor plate provides overpressure protection for the diaphragm. At least a portion of the operating range of the pressure sensor occurs while the diaphragm is contacting the doped region. As a result, the capacitive output signal of the pressure sensor is produced by changes in contact area between the diaphragm and a thin dielectric situated on the doped region in response to pressure applied to the diaphragm.
摘要翻译： 全硅单体电容式绝对压力感测装置及其制造方法。 该器件采用在可变电容器的柔性电容器板上工作的单晶硅膜片。 隔膜结合到单晶硅晶片以覆盖蚀刻到晶片中的空腔。 可变电容器的固定电容器板由空腔底部的重掺杂区域形成。 在固定电容器板上生长薄介电层以完成电容器。 空腔具有最小的深度，使得固定电容器板为隔膜提供过压保护。 当隔膜接触掺杂区域时，压力传感器的工作范围的至少一部分发生。 结果，压力传感器的电容输出信号是通过响应于施加到隔膜的压力而在隔膜和位于掺杂区域上的薄电介质之间的接触面积的变化产生的。
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公开(公告)号：US5879572A
公开(公告)日：1999-03-09
申请号：US751350
申请日：1996-11-19
IPC分类号： H01L21/306 , H01L21/312 , H01L21/3065 , H01L21/308 , C23F1/02
CPC分类号： B81C1/00246 , H01L21/30604 , B81C2203/0735 , H01L21/3122 , Y10S438/942 , Y10S438/97 , Y10S438/976
摘要： A process for bulk micromachining a silicon wafer to form a silicon micromachined structure. The process involves the application of a protective film on one or more surfaces of the silicon wafer to protect metallization and circuitry on the wafer during the bulk micromachining process, during which a wet chemical etchant is employed to remove bulk silicon from a surface of the silicon wafer. The protective film is divinylsiloxane bisbenzocyclobutene (BCB), which has been found to be highly resistant to a wide variety of wet chemical etchants, and retains such resistant at elevated temperatures commonly preferred for bulk silicon etching. The degree to which this material is cured prior to etching is advantageously tailored to promote its resistance to the etchant and promote its adhesion to the silicon wafer.
摘要翻译： 一种用于大量微加工硅晶片以形成硅微加工结构的方法。 该方法涉及在硅晶片的一个或多个表面上施加保护膜，以在体微加工过程中保护晶片上的金属化和电路，在此期间使用湿化学蚀刻剂从硅表面去除体硅 晶圆。 保护膜是二乙烯基硅氧烷双苯并环丁烯（BCB），其被发现对各种湿化学蚀刻剂具有高度抗性，并且在体硅蚀刻通常优选的高温下保持这种耐受性。 该材料在蚀刻之前固化的程度有利地被定制以促进其对蚀刻剂的抗性并促进其对硅晶片的粘附。
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公开(公告)号：US5706565A
公开(公告)日：1998-01-13
申请号：US707107
申请日：1996-09-03
申请人： Douglas Ray Sparks , William J. Baney , Steven Edward Staller , Dan Wesley Chilcott , James Werstler Siekkinen
发明人： Douglas Ray Sparks , William J. Baney , Steven Edward Staller , Dan Wesley Chilcott , James Werstler Siekkinen
CPC分类号： G01L9/0073 , Y10T29/435
摘要： An all-silicon monolithic capacitive absolute pressure-sensing device and method for making the same. The device employs a single-crystal silicon diaphragm that serves at a flexible capacitor plate of a variable capacitor. The diaphragm is bonded to a single-crystal silicon wafer to overlie a cavity etched into the wafer. A fixed capacitor plate of the variable capacitor is formed by a heavily-doped region at the bottom of the cavity. A thin dielectric layer is grown on the fixed capacitor plate to complete the capacitor. The cavity has a minimal depth such that the fixed capacitor plate provides overpressure protection for the diaphragm. At least a portion of the operating range of the pressure sensor occurs while the diaphragm is contacting the doped region. As a result, the capacitive output signal of the pressure sensor is produced by changes in contact area between the diaphragm and a thin dielectric situated on the doped region in response to pressure applied to the diaphragm.
摘要翻译： 全硅单体电容式绝对压力感测装置及其制造方法。 该器件采用在可变电容器的柔性电容器板上工作的单晶硅膜片。 隔膜结合到单晶硅晶片以覆盖蚀刻到晶片中的空腔。 可变电容器的固定电容器板由空腔底部的重掺杂区域形成。 在固定电容器板上生长薄介电层以完成电容器。 空腔具有最小的深度，使得固定电容器板为隔膜提供过压保护。 当隔膜接触掺杂区域时，压力传感器的工作范围的至少一部分发生。 结果，压力传感器的电容输出信号是通过响应于施加到隔膜的压力而在隔膜和位于掺杂区域上的薄电介质之间的接触面积的变化产生的。
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公开(公告)号：US5831162A
公开(公告)日：1998-11-03
申请号：US785683
申请日：1997-01-21
IPC分类号： G01C19/5684 , G01P1/02 , G01P15/08 , G01C19/00 , G01P9/00
CPC分类号： G01C19/5684 , G01P1/023 , G01P15/0802
摘要： A method for making and vacuum packaging a silicon micromachined motion sensor, such as a gyroscope, at the chip level. The method involves micromachining a trench-isolated sensing element in a sensing chip, and then attaching a circuit chip to enclose the sensing element. Solder bumps serve to attach the circuit chip to the sensing chip, form a hermetic seal to enable vacuum-packaging of the sensor, and electrically interconnect the sensing chip with the circuit chip. Conductive runners formed on the enclosed surface of the circuit chip serve to electrically interconnect the sensing element with its associated sensing structures.
摘要翻译： 一种在芯片级制造和真空包装硅微加工运动传感器（例如陀螺仪）的方法。 该方法涉及在感测芯片中微加工沟槽隔离的感测元件，然后附接电路芯片以包围感测元件。 焊接凸起用于将电路芯片附接到感测芯片，形成气密密封以实现传感器的真空包装，并将感测芯片与电路芯片电互连。 形成在电路芯片的封闭表面上的导电流道用于将感测元件与其相关联的感测结构电互连。
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