摘要:
A ring oscillator including a plurality of buffer units, each of which has a cross-coupled structure, for generating clock signals using a bias voltage having a predetermined voltage level applied thereto, wherein the clock signals have a swing width corresponding to the bias voltage.
摘要:
Bias voltage generator circuit and clock synchronizing circuit includes a bias unit configured to control a current in response to a bandwidth control signal, an amplification unit configured to differentially amplify an input signal in response to the current controlled by the bias unit and an output unit configured to receive an output signal of the amplification unit to output the bias voltage.
摘要:
A quadrature phase correction circuit includes an N-bit code counter configured to generate an N-bit code value according to a detected phase difference when a quadrature phase correction is carried out, N-bit code values are stored according to a plurality of detected phase differences. A controller shares the N-bit code counter, controls the generation of the N-bit code values according to the plurality of detected phase differences, and controls the storing of the N-bit code values in an allocated space of the storage by use of a multiplexer configured to provide the plurality of detected phase differences to the N-bit code counter, and a demultiplexer configured to store the N-bit code values in the allocated space of the storage.
摘要:
Bias voltage generator circuit and clock synchronizing circuit includes a bias unit configured to control a current in response to a bandwidth control signal, an amplification unit configured to differentially amplify an input signal in response to the current controlled by the bias unit and an output unit configured to receive an output signal of the amplification unit to output the bias voltage.
摘要:
A semiconductor memory device can optimize the layout area and current consumption based on multi-phase clock signals which are generated by dividing a source clock signal using a reset signal without a delay locked loop and a phase locked loop in order to have various phase information of low frequencies and different activation timings with a constant phase difference.
摘要:
A semiconductor device includes a pulse signal generating unit for generating a plurality of pulse signals each of which has a different pulse width from each other, a signal multiplexing unit for outputting one of the plurality of the pulse signals as an enable signal in response to an operating frequency of the semiconductor device, and a duty ratio detecting unit for detecting a duty ratio of external clock signals in response to the enable signal.
摘要:
Semiconductor memory device with duty correction circuit includes a clock edge detector configured to generate first and second detection pulses in response to a transition timing of a common clock signal in an initial measurement operation; a duty detector configured to compare the first and second detection pulses to output comparison result signals; and a code counter configured to control the duty detector based on the comparison signals outputted from the duty detector in the initial measurement operation.
摘要:
A semiconductor memory device can optimize the layout area and current consumption based on multi-phase clock signals which are generated by dividing a source clock signal using a reset signal without a delay locked loop and a phase locked loop in order to have various phase information of low frequencies and different activation timings with a constant phase difference.
摘要:
A semiconductor device includes a pulse signal generating unit for generating a plurality of pulse signals each of which has a different pulse width from each other, a signal multiplexing unit for outputting one of the plurality of the pulse signals as an enable signal in response to frequencies of external clock signals, and a duty ratio detecting unit for detecting a duty ratio of the external clock signals in response to the enable signal.
摘要:
A multi-phase clock generation circuit having a low skew imprecision is presented. The circuit includes a phase clock generation block and a phase correction block. The phase clock generation block is configured to generate a plurality of phase clocks having phases different from each other with response to a pair of input clocks. The phase correction block is configured to generate final output interpolated phase clocks in which each has a center phase by adjusted by multiple phase clocks that have adjacent phases.