公开(公告)号：US07701991B2

公开(公告)日：2010-04-20

申请号：US11233494

申请日：2005-09-22

Applicant: David M. Bean ,  Yi Qian ,  Daniel E. Pulver

Inventor： David M. Bean ,  Yi Qian ,  Daniel E. Pulver

IPC: H01S3/04 ,  H01S3/14 ,  H01L31/00

CPC classification number: H01S5/34313 ,  B82Y20/00 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/02461 ,  H01S5/2004 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3077 ,  H01S5/3215 ,  H01S5/3406 ,  H01S5/34306 ,  H01S5/34366

Abstract: A semiconductor laser diode using the aluminum gallium, arsenide, gallium indium arsenide phosphide, indium phosphide, (AlGaInAs/GaInAsP/InP) material system and related combinations is disclosed. Both the design of the active layer and the design of the optical cavity are optimized to minimize the temperature rise of the active region and to minimize the effects of elevated active layer temperature on the laser efficiency. The result is a high output power semiconductor laser for the wavelengths between 1.30 and 1.61 micrometers for the pumping of erbium doped waveguide devices or for direct use in military, medical, or commercial applications.

Abstract translation: 公开了使用铝镓砷化物，砷化镓磷化铟，磷化铟，（AlGaInAs / GaInAsP / InP）材料体系和相关组合的半导体激光二极管。 优化有源层的设计和光学腔的设计，以最小化有源区的温度上升并且最小化活性层温度升高对激光效率的影响。 结果是用于在掺铒波导器件的泵浦或直接用于军事，医疗或商业应用中的波长在1.30和1.61微米之间的高输出功率半导体激光器。