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公开(公告)号：US08675456B2
公开(公告)日：2014-03-18
申请号：US13482078
申请日：2012-05-29
IPC分类号： G11B11/00
CPC分类号： G11B5/82 , G11B5/66 , G11B5/7325 , G11B2005/0021 , G11C11/161 , G11C11/1659 , G11C11/1675
摘要： A method of writing binary data comprising (i) heating a magnetic microstructure from an initial temperature to an above-ambient temperature that is not less than a transition temperature for the magnetic microstructure, which causes a phase transition interlayer of the magnetic microstructure to transition from an antiferromagnetic phase to a ferromagnetic phase; and (ii) reversing an orientation of magnetization of a magnetic storage layer of the magnetic microstructure with a magnetic field while the phase transition interlayer is in the ferromagnetic phase.
摘要翻译： 一种写入二进制数据的方法，包括（i）将磁性微结构从初始温度加热到不小于磁性微结构的转变温度的高于环境温度，这导致磁性微结构的相变中间层从 铁磁相的反铁磁相; 和（ii）在相变夹层处于铁磁相位的同时用磁场反转磁性微结构的磁存储层的磁化取向。
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公开(公告)号：US08449730B2
公开(公告)日：2013-05-28
申请号：US12505921
申请日：2009-07-20
申请人： En Yang , David E. Laughlin , Jian-Gang Zhu
发明人： En Yang , David E. Laughlin , Jian-Gang Zhu
CPC分类号： G11B5/851 , C23C14/025 , C23C14/165 , G11B5/65 , G11B5/7325 , G11B5/8404
摘要： A process of fabricating a perpendicular magnetic recording medium. In one embodiment, the process may comprise forming a metallic buffer layer with a (002) texture on an underlayer using a deposition process performed at a temperature below 30° C. The underlayer may have a crystalline (001) texture. The process may further comprise forming a perpendicular magnetic recording layer on top of the metallic buffer layer using a deposition process performed at a temperature above 350° C. The magnetic recording layer may comprise a magnetic material with a L10 crystalline structure and with a c-axis perpendicular to a plane of the perpendicular magnetic recording layer. The process may further comprise removing metal of the metallic buffer layer from a top surface of the perpendicular magnetic recording layer that moved to the top surface of the perpendicular magnetic recording layer during the forming of the perpendicular magnetic recording layer.
摘要翻译： 制造垂直磁记录介质的方法。 在一个实施方案中，该方法可以包括使用在低于30℃的温度下进行的沉积工艺在底层上形成具有（002）纹理的金属缓冲层。底层可具有结晶（001）结构。 该方法可以进一步包括使用在高于350℃的温度下进行的沉积工艺在金属缓冲层的顶部上形成垂直磁记录层。磁记录层可以包括具有L10结晶结构和c- 垂直于垂直磁记录层的平面。 该方法可以进一步包括在形成垂直磁记录层期间从垂直磁记录层的顶表面移除金属缓冲层的金属，该顶表面移动到垂直磁记录层的顶表面。
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3.发明授权Magnetic recording medium with a Ga3Pt5 structured underlayer and a cobalt-based magnetic layer 有权具有Ga3Pt5结构的底层和钴基磁性层的磁记录介质公开(公告)号：US06596417B1
公开(公告)日：2003-07-22
申请号：US09677557
申请日：2000-09-29
申请人： Yu-Nu Hsu , David E. Laughlin , David N. Lambeth
发明人： Yu-Nu Hsu , David E. Laughlin , David N. Lambeth
IPC分类号： G11B566
CPC分类号： G11B5/7325 , C23C14/3414 , G11B5/84 , Y10S428/90 , Y10T428/12465
摘要： The present invention provides a longitudinal magnetic recording media having a substrate, a Co or Co alloy based magnetic layer arid an underlayer disposed between the substrate and the magnetic layer. The underlayer is made of a material having a Ga3Pt5 crystalline structure, most preferably Ni5Al3. Several intermediate layers, disposed between the underlayer and the magnetic layer may also be included.
摘要翻译： 本发明提供了一种纵向磁记录介质，其具有基板，基于Co或Co合金的磁性层，以及设置在基板和磁性层之间的底层。 底层由具有Ga3Pt5晶体结构的材料制成，最优选Ni5Al3。 还可以包括设置在底层和磁性层之间的几个中间层。
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公开(公告)号：US20080180827A1
公开(公告)日：2008-07-31
申请号：US11700308
申请日：2007-01-31
申请人： Jian-Gang Zhu , David E. Laughlin
发明人： Jian-Gang Zhu , David E. Laughlin
CPC分类号： G11B5/82 , G11B5/66 , G11B5/7325 , G11B2005/0021 , G11C11/161 , G11C11/1659 , G11C11/1675
摘要： A magnetic microstructure comprising (i) a magnetic storage layer having a magnetic easy axis perpendicular to a film plane of the storage magnetic layer; (ii) a magnetic assist layer having a magnetic easy axis in the film plane; and (iii) a phase transition interlayer between the magnetic storage layer and the magnetic assist layer. The phase transition layer comprises a material, such as FeRh, that switches from antiferromagnetic at ambient to ferromagnetic at a transition temperature that is greater than ambient, but below the Curie temperature. When the phase transition interlayer is in antiferromagnetic phase, there exists little magnetic coupling between the storage and assist layers. When the interlayer changes to ferromagnetic phase, the interlayer couples the magnetic moments of the storage and assist layer ferromagnetically. If the anisotropy field-thickness product of the two layers is similar and the coupling is sufficiently strong, the effective magnetic anisotropy of the storage layer and the assist layer essentially vanishes. That way, the required write field at the recording temperature needs only to be a few percent of the ambient anisotropy field of the storage layer.
摘要翻译： 一种磁性微结构，包括：（i）具有垂直于所述存储磁性层的膜平面的易磁化轴的磁存储层; （ii）在膜平面中具有易磁化轴的磁辅助层; 和（iii）磁存储层和磁辅助层之间的相变层间。 相变层包括诸如FeRh的材料，其在大环境下的反铁磁性转变为铁磁性，转变温度大于环境温度但低于居里温度。 当相变中间层处于反铁磁相时，存储和辅助层之间几乎没有磁耦合。 当中间层变为铁磁相时，层间铁磁性地耦合存储和辅助层的磁矩。 如果两层的各向异性场厚产品相似并且耦合足够强，则存储层和辅助层的有效磁各向异性基本上消失。 这样，在记录温度下所需的写入场仅需要存储层环境各向异性场的百分之几。
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公开(公告)号：US06432563B1
公开(公告)日：2002-08-13
申请号：US09541245
申请日：2000-04-03
申请人： Jie Zou , David N. Lambeth , David E. Laughlin
发明人： Jie Zou , David N. Lambeth , David E. Laughlin
IPC分类号： G11B566
CPC分类号： G11B5/66 , G11B5/00 , G11B5/012 , Y10S428/90
摘要： The present invention provides a magnetic recording media incorporating Zn containing layers in close proximity to a magnetic layer to provide media having increased coercivity and lower noise. The Zn containing layer can be incorporated in a rotating, translating or stationary recording media to operate in conjunction with magnetic transducing heads for recording and reading of magnetic data, as well as other applications. The magnetic recording medium of the invention preferably includes a Co or Co alloy film magnetic layer, underlayer structures to promote epitaxial crystalline structure in the magnetic layer, and a Zn containing layer to promote isolation between the magnetic grains. The medium can further include seed layers, underlayers, intermediate layers, and overlayers. The process of manufacture includes promoting diffusion of Zn to the magnetic layer grain boundaries.
摘要翻译： 本发明提供了一种磁记录介质，其包含非常接近磁性层的含Zn层，以提供具有增加的矫顽力和较低噪声的介质。 含锌层可以结合在旋转，平移或静止的记录介质中以与用于记录和读取磁数据以及其它应用的磁转换头一起操作。 本发明的磁记录介质优选包括Co或Co合金膜磁性层，用于促进磁性层中的外延晶体结构的底层结构，以及含Zn层以促进磁性颗粒之间的隔离。 介质还可以包括种子层，底层，中间层和覆盖层。 制造方法包括促进Zn向磁性层晶界的扩散。
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6.发明授权Highly oriented magnetic thin films, recording media, transducers, devices made therefrom and methods of making 失效高取向磁性薄膜，记录介质，换能器，由其制成的装置和制造方法公开(公告)号：US06248416B1
公开(公告)日：2001-06-19
申请号：US08967669
申请日：1997-11-10
申请人： David N. Lambeth , David E. Laughlin , Wei Yang , Heng Gong , Jie Ziou
发明人： David N. Lambeth , David E. Laughlin , Wei Yang , Heng Gong , Jie Ziou
IPC分类号： G11B566
CPC分类号： G11B5/667 , G11B5/7325 , Y10T428/12611 , Y10T428/265
摘要： The present invention provides for magnetic and magneto-optic recording media, transducers and data storage devices constructed therefrom that have highly oriented films having long range order in the crystal structure of the film. The recording medium includes a magnetic recording layer comprised of Co-based material, such as Co or one or more Co alloys having a (10{overscore (1)}0) crystal texture, a substrate, a first underlayer having a fcc structure and a (110) crystal texture disposed between the substrate and the magnetic recording layer. A second underlayer having a bcc structure and a (112) crystal texture is also disposed between the magnetic recording layer and the first underlayer. In particular, if a (110) Si single crystal substrate is non-oxidized certain metals having fcc structures, such as Ag, Cu, Al, and Au and fcc derivative structures, such L10 and L12 structures, can be epitaxially grown on the Si surface. While the one unit cell to one unit cell lattice match between fcc Ag and A4 (diamond) Si is quite poor, multiples of the Ag unit cell distance fit very well on the Si surface. The long range order of the Si surface induces the epitaxial growth of the Ag fcc structure. Upon this fcc structure, a bcc structure, such as Cr, or a bcc derivative, such as B2, DO3 and/or L21 can be epitaxially grown.
摘要翻译： 本发明提供了由其构成的磁和磁光记录介质，换能器和数据存储装置，其具有在膜的晶体结构中具有长距离顺序的高取向膜。 记录介质包括由Co基材料组成的磁记录层，例如Co或具有（10 {overscore（1）} O）晶体结构的一种或多种Co合金，衬底，具有fcc结构的第一底层和 设置在基板和磁记录层之间的（110）晶体结构。 具有bcc结构和（112）晶体结构的第二底层也设置在磁记录层和第一底层之间。 特别地，如果（110）Si单晶衬底不被氧化，则可以在Si上外延生长具有fcc结构的某些金属，例如Ag，Cu，Al和Au以及fcc衍生结构，如L10和L12结构 表面。 虽然fcc Ag和A4（金刚石）Si之间的一个单元电池与一个单元电池晶格匹配相当差，但是Ag单元电池距离的倍数在Si表面上很好地匹配。 Si表面的长距离顺序引起Ag fcc结构的外延生长。 在该fcc结构中，可以外延生长诸如Cr的bcc结构或bcc衍生物，例如B2，DO3和/或L21。
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公开(公告)号：US5993956A
公开(公告)日：1999-11-30
申请号：US844835
申请日：1997-04-22
申请人： David N. Lambeth , Li-Lien Lee , David E. Laughlin
发明人： David N. Lambeth , Li-Lien Lee , David E. Laughlin
CPC分类号： G11B5/64 , Y10S428/90 , Y10T428/26 , Y10T428/265
摘要： The present invention provides for a magnetic recording media incorporating Mn-containing layers between a substrate and a magnetic layer to provide media having increased coercivity and lower noise. The Mn-containing layer can be incorporated in a rotating, translating or stationary recording media to operate in conjunction with magnetic transducing heads for recording and reading of magnetic data, as well as other applications. The magnetic recording medium of the invention preferably includes a Co or Co alloy film magnetic layer, and Mn-containing layer, preferably comprised of VMn, TiMn, MnZn, CrMnMo, CrMnW, CrMnV, and CrMnTi, and most preferably a CrMn alloy, disposed between the substrate and the magnetic layer to promote an epitaxial crystalline structure in the magnetic layer. The medium can further include seed layers, preferably polycrystalline MgO for longitudinal media, underlayers, and intermediate layers. Underlayers and intermediate layers are comprised of materials having either an A2 structure or a B2-ordered crystalline structure disposed between the seed layer and the magnetic layer. Materials having an A2 structure are preferably Cr or Cr alloys, such as CrV, CrMo, CrW and CrTi. Materials having a B2-ordered structure having a lattice constant that is substantially comparable to that of Cr, such as those preferably selected from the group consisting of NiAl, AILCo, FeAl, FeTi, CoFe, CoTi, CoHf, CoZr, NiTi, CuBe, CuZn, A-LMn, AlRe, AgMg, and Al.sub.2 FeMn.sub.2, and is most preferably FeAl or NiAl.
摘要翻译： 本发明提供一种磁性记录介质，其在衬底和磁性层之间结合含Mn层，以提供具有增加的矫顽力和较低噪声的介质。 含Mn层可以结合在旋转，平移或静止的记录介质中以与用于记录和读取磁数据以及其它应用的磁转换头一起操作。 本发明的磁记录介质优选包括Co或Co合金膜磁性层和含Mn层，优选包含VMn，TiMn，MnZn，CrMnMo，CrMnW，CrMnV和CrMnTi，最优选CrMn合金， 在衬底和磁性层之间，以促进在磁性层中的外延晶体结构。 介质还可以包括种子层，优选用于纵向介质，底层和中间层的多晶MgO。 底层和中间层由具有设置在种子层和磁性层之间的具有A2结构或B2有序晶体结构的材料组成。 具有A2结构的材料优选为Cr或Cr合金，例如CrV，CrMo，CrW和CrTi。 具有基本上与Cr相当的晶格常数的B2有序结构的材料，例如优选选自NiAl，AlLCo，FeAl，FeTi，CoFe，CoTi，CoHf，CoZr，NiTi，CuBe， CuZn，A-LMn，AlRe，AgMg和Al2FeMn2，最优选为FeAl或NiAl。
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公开(公告)号：US08211557B2
公开(公告)日：2012-07-03
申请号：US11700308
申请日：2007-01-31
申请人： Jian-Gang Zhu , David E. Laughlin
发明人： Jian-Gang Zhu , David E. Laughlin
IPC分类号： G11B5/66
CPC分类号： G11B5/82 , G11B5/66 , G11B5/7325 , G11B2005/0021 , G11C11/161 , G11C11/1659 , G11C11/1675
摘要： A magnetic microstructure comprising (i) a magnetic storage layer having a magnetic easy axis perpendicular to a film plane of the storage magnetic layer; (ii) a magnetic assist layer having a magnetic easy axis in the film plane; and (iii) a phase transition interlayer between the magnetic storage layer and the magnetic assist layer. The phase transition layer comprises a material, such as FeRh, that switches from antiferromagnetic at ambient to ferromagnetic at a transition temperature that is greater than ambient, but below the Curie temperature. When the phase transition interlayer is in antiferromagnetic phase, there exists little magnetic coupling between the storage and assist layers. When the interlayer changes to ferromagnetic phase, the interlayer couples the magnetic moments of the storage and assist layer ferromagnetically. If the anisotropy field-thickness product of the two layers is similar and the coupling is sufficiently strong, the effective magnetic anisotropy of the storage layer and the assist layer essentially vanishes. That way, the required write field at the recording temperature needs only to be a few percent of the ambient anisotropy field of the storage layer.
摘要翻译： 一种磁性微结构，包括：（i）具有垂直于所述存储磁性层的膜平面的易磁化轴的磁存储层; （ii）在膜平面中具有易磁化轴的磁辅助层; 和（iii）磁存储层和磁辅助层之间的相变层间。 相变层包括诸如FeRh的材料，其在大环境下的反铁磁性转变为铁磁性，转变温度大于环境温度但低于居里温度。 当相变中间层处于反铁磁相时，存储和辅助层之间几乎没有磁耦合。 当中间层变为铁磁相时，层间铁磁性地耦合存储和辅助层的磁矩。 如果两层的各向异性场厚产品相似并且耦合足够强，则存储层和辅助层的有效磁各向异性基本上消失。 这样，在记录温度下所需的写入场仅需要存储层环境各向异性场的百分之几。
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公开(公告)号：US20110011733A1
公开(公告)日：2011-01-20
申请号：US12505921
申请日：2009-07-20
申请人： En Yang , David E. Laughlin , Jian-Gang Zhu
发明人： En Yang , David E. Laughlin , Jian-Gang Zhu
CPC分类号： G11B5/851 , C23C14/025 , C23C14/165 , G11B5/65 , G11B5/7325 , G11B5/8404
摘要： A process of fabricating a perpendicular magnetic recording medium. In one embodiment, the process may comprise forming a metallic buffer layer with a (002) texture on an underlayer using a deposition process performed at a temperature below 30° C. The underlayer may have a crystalline (001) texture. The process may further comprise forming a perpendicular magnetic recording layer on top of the metallic buffer layer using a deposition process performed at a temperature above 350° C. The magnetic recording layer may comprise a magnetic material with a L10 crystalline structure and with a c-axis perpendicular to a plane of the perpendicular magnetic recording layer. The process may further comprise removing metal of the metallic buffer layer from a top surface of the perpendicular magnetic recording layer that moved to the top surface of the perpendicular magnetic recording layer during the forming of the perpendicular magnetic recording layer.
摘要翻译： 制造垂直磁记录介质的方法。 在一个实施方案中，该方法可以包括使用在低于30℃的温度下进行的沉积工艺在底层上形成具有（002）纹理的金属缓冲层。底层可具有结晶（001）结构。 该方法可以进一步包括使用在高于350℃的温度下进行的沉积工艺在金属缓冲层的顶部上形成垂直磁记录层。磁记录层可以包括具有L10结晶结构和c- 垂直于垂直磁记录层的平面。 该方法可以进一步包括在形成垂直磁记录层期间从垂直磁记录层的顶表面移除金属缓冲层的金属，该顶表面移动到垂直磁记录层的顶表面。
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公开(公告)号：US5800931A
公开(公告)日：1998-09-01
申请号：US553893
申请日：1995-11-06
CPC分类号： G11B5/732 , G11B5/66 , G11B5/7325 , G11B5/8404 , Y10S428/90 , Y10T428/12465 , Y10T428/12861 , Y10T428/12896 , Y10T428/12903 , Y10T428/265
摘要： The present invention provides a longitudinal magnetic recording media having a substrate, a sputter deposited MgO seed layer, a Co or Co alloy based magnetic layer and an underlayer disposed between the seed layer and the magnetic layer comprised of Cr, a Cr alloy or a material having a B2 ordered crystalline structure, preferably NiAl or FeAl. A thin Cr or Cr alloy intermediate layer of about 1.0 nm to 5.0 nm thick may be positioned between the underlayer and the magnetic layer.
摘要翻译： 本发明提供一种纵向磁记录介质，其具有基板，溅射沉积的MgO种子层，Co或Co合金基磁性层以及设置在种子层和由Cr，Cr合金或材料构成的磁性层之间的底层 具有B2有序晶体结构，优选为NiAl或FeAl。 约1.0nm至5.0nm厚的薄的Cr或Cr合金中间层可以位于底层和磁性层之间。
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