公开(公告)号：US20080180827A1

公开(公告)日：2008-07-31

申请号：US11700308

申请日：2007-01-31

申请人： Jian-Gang Zhu ,  David E. Laughlin

发明人： Jian-Gang Zhu ,  David E. Laughlin

IPC分类号： G11B5/02 ,  G11B5/82

CPC分类号： G11B5/82 ,  G11B5/66 ,  G11B5/7325 ,  G11B2005/0021 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675

摘要： A magnetic microstructure comprising (i) a magnetic storage layer having a magnetic easy axis perpendicular to a film plane of the storage magnetic layer; (ii) a magnetic assist layer having a magnetic easy axis in the film plane; and (iii) a phase transition interlayer between the magnetic storage layer and the magnetic assist layer. The phase transition layer comprises a material, such as FeRh, that switches from antiferromagnetic at ambient to ferromagnetic at a transition temperature that is greater than ambient, but below the Curie temperature. When the phase transition interlayer is in antiferromagnetic phase, there exists little magnetic coupling between the storage and assist layers. When the interlayer changes to ferromagnetic phase, the interlayer couples the magnetic moments of the storage and assist layer ferromagnetically. If the anisotropy field-thickness product of the two layers is similar and the coupling is sufficiently strong, the effective magnetic anisotropy of the storage layer and the assist layer essentially vanishes. That way, the required write field at the recording temperature needs only to be a few percent of the ambient anisotropy field of the storage layer.

摘要翻译： 一种磁性微结构，包括：（i）具有垂直于所述存储磁性层的膜平面的易磁化轴的磁存储层; （ii）在膜平面中具有易磁化轴的磁辅助层; 和（iii）磁存储层和磁辅助层之间的相变层间。 相变层包括诸如FeRh的材料，其在大环境下的反铁磁性转变为铁磁性，转变温度大于环境温度但低于居里温度。 当相变中间层处于反铁磁相时，存储和辅助层之间几乎没有磁耦合。 当中间层变为铁磁相时，层间铁磁性地耦合存储和辅助层的磁矩。 如果两层的各向异性场厚产品相似并且耦合足够强，则存储层和辅助层的有效磁各向异性基本上消失。 这样，在记录温度下所需的写入场仅需要存储层环境各向异性场的百分之几。

公开(公告)号：US08449730B2

公开(公告)日：2013-05-28

申请号：US12505921

申请日：2009-07-20

申请人： En Yang ,  David E. Laughlin ,  Jian-Gang Zhu

发明人： En Yang ,  David E. Laughlin ,  Jian-Gang Zhu

IPC分类号： C23C14/00 ,  C23C14/32

CPC分类号： G11B5/851 ,  C23C14/025 ,  C23C14/165 ,  G11B5/65 ,  G11B5/7325 ,  G11B5/8404

摘要： A process of fabricating a perpendicular magnetic recording medium. In one embodiment, the process may comprise forming a metallic buffer layer with a (002) texture on an underlayer using a deposition process performed at a temperature below 30° C. The underlayer may have a crystalline (001) texture. The process may further comprise forming a perpendicular magnetic recording layer on top of the metallic buffer layer using a deposition process performed at a temperature above 350° C. The magnetic recording layer may comprise a magnetic material with a L10 crystalline structure and with a c-axis perpendicular to a plane of the perpendicular magnetic recording layer. The process may further comprise removing metal of the metallic buffer layer from a top surface of the perpendicular magnetic recording layer that moved to the top surface of the perpendicular magnetic recording layer during the forming of the perpendicular magnetic recording layer.

摘要翻译： 制造垂直磁记录介质的方法。 在一个实施方案中，该方法可以包括使用在低于30℃的温度下进行的沉积工艺在底层上形成具有（002）纹理的金属缓冲层。底层可具有结晶（001）结构。 该方法可以进一步包括使用在高于350℃的温度下进行的沉积工艺在金属缓冲层的顶部上形成垂直磁记录层。磁记录层可以包括具有L10结晶结构和c- 垂直于垂直磁记录层的平面。 该方法可以进一步包括在形成垂直磁记录层期间从垂直磁记录层的顶表面移除金属缓冲层的金属，该顶表面移动到垂直磁记录层的顶表面。

公开(公告)号：US20120281512A1

公开(公告)日：2012-11-08

申请号：US13482078

申请日：2012-05-29

申请人： Jian-Gang Zhu ,  David E. Laughlin

发明人： Jian-Gang Zhu ,  David E. Laughlin

IPC分类号： G11B13/04

CPC分类号： G11B5/82 ,  G11B5/66 ,  G11B5/7325 ,  G11B2005/0021 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675

摘要： A method of writing binary data comprising (i) heating a magnetic microstructure from an initial temperature to an above-ambient temperature that is not less than a transition temperature for the magnetic microstructure, which causes a phase transition interlayer of the magnetic microstructure to transition from an antiferromagnetic phase to a ferromagnetic phase; and (ii) reversing an orientation of magnetization of a magnetic storage layer of the magnetic microstructure with a magnetic field while the phase transition interlayer is in the ferromagnetic phase.

摘要翻译： 一种写入二进制数据的方法，包括（i）将磁性微结构从初始温度加热到不小于磁性微结构的转变温度的高于环境温度，这导致磁性微结构的相变中间层从 铁磁相的反铁磁相; 和（ii）在相变夹层处于铁磁相位的同时用磁场反转磁性微结构的磁存储层的磁化取向。

公开(公告)号：US08211557B2

公开(公告)日：2012-07-03

申请号：US11700308

申请日：2007-01-31

申请人： Jian-Gang Zhu ,  David E. Laughlin

发明人： Jian-Gang Zhu ,  David E. Laughlin

IPC分类号： G11B5/66

CPC分类号： G11B5/82 ,  G11B5/66 ,  G11B5/7325 ,  G11B2005/0021 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675

摘要： A magnetic microstructure comprising (i) a magnetic storage layer having a magnetic easy axis perpendicular to a film plane of the storage magnetic layer; (ii) a magnetic assist layer having a magnetic easy axis in the film plane; and (iii) a phase transition interlayer between the magnetic storage layer and the magnetic assist layer. The phase transition layer comprises a material, such as FeRh, that switches from antiferromagnetic at ambient to ferromagnetic at a transition temperature that is greater than ambient, but below the Curie temperature. When the phase transition interlayer is in antiferromagnetic phase, there exists little magnetic coupling between the storage and assist layers. When the interlayer changes to ferromagnetic phase, the interlayer couples the magnetic moments of the storage and assist layer ferromagnetically. If the anisotropy field-thickness product of the two layers is similar and the coupling is sufficiently strong, the effective magnetic anisotropy of the storage layer and the assist layer essentially vanishes. That way, the required write field at the recording temperature needs only to be a few percent of the ambient anisotropy field of the storage layer.

摘要翻译： 一种磁性微结构，包括：（i）具有垂直于所述存储磁性层的膜平面的易磁化轴的磁存储层; （ii）在膜平面中具有易磁化轴的磁辅助层; 和（iii）磁存储层和磁辅助层之间的相变层间。 相变层包括诸如FeRh的材料，其在大环境下的反铁磁性转变为铁磁性，转变温度大于环境温度但低于居里温度。 当相变中间层处于反铁磁相时，存储和辅助层之间几乎没有磁耦合。 当中间层变为铁磁相时，层间铁磁性地耦合存储和辅助层的磁矩。 如果两层的各向异性场厚产品相似并且耦合足够强，则存储层和辅助层的有效磁各向异性基本上消失。 这样，在记录温度下所需的写入场仅需要存储层环境各向异性场的百分之几。

公开(公告)号：US20110011733A1

公开(公告)日：2011-01-20

申请号：US12505921

申请日：2009-07-20

申请人： En Yang ,  David E. Laughlin ,  Jian-Gang Zhu

发明人： En Yang ,  David E. Laughlin ,  Jian-Gang Zhu

IPC分类号： B05D5/12 ,  C23C14/34

CPC分类号： G11B5/851 ,  C23C14/025 ,  C23C14/165 ,  G11B5/65 ,  G11B5/7325 ,  G11B5/8404

摘要： A process of fabricating a perpendicular magnetic recording medium. In one embodiment, the process may comprise forming a metallic buffer layer with a (002) texture on an underlayer using a deposition process performed at a temperature below 30° C. The underlayer may have a crystalline (001) texture. The process may further comprise forming a perpendicular magnetic recording layer on top of the metallic buffer layer using a deposition process performed at a temperature above 350° C. The magnetic recording layer may comprise a magnetic material with a L10 crystalline structure and with a c-axis perpendicular to a plane of the perpendicular magnetic recording layer. The process may further comprise removing metal of the metallic buffer layer from a top surface of the perpendicular magnetic recording layer that moved to the top surface of the perpendicular magnetic recording layer during the forming of the perpendicular magnetic recording layer.

摘要翻译： 制造垂直磁记录介质的方法。 在一个实施方案中，该方法可以包括使用在低于30℃的温度下进行的沉积工艺在底层上形成具有（002）纹理的金属缓冲层。底层可具有结晶（001）结构。 该方法可以进一步包括使用在高于350℃的温度下进行的沉积工艺在金属缓冲层的顶部上形成垂直磁记录层。磁记录层可以包括具有L10结晶结构和c- 垂直于垂直磁记录层的平面。 该方法可以进一步包括在形成垂直磁记录层期间从垂直磁记录层的顶表面移除金属缓冲层的金属，该顶表面移动到垂直磁记录层的顶表面。

公开(公告)号：US20090237987A1

公开(公告)日：2009-09-24

申请号：US12079036

申请日：2008-03-24

申请人： Jian-Gang Zhu ,  Yi Luo ,  Xin Li

发明人： Jian-Gang Zhu ,  Yi Luo ,  Xin Li

IPC分类号： G11C11/00 ,  H01L21/00 ,  H01L29/82

CPC分类号： H01L27/224 ,  G11C11/15 ,  G11C11/1675 ,  H01L43/08

摘要： A magnetic memory or MRAM memory system comprising an M×N crossbar array of MRAM cells. Each memory cell stores binary data bits with switchable magnetoresistive tunnel junctions (MJT) where the electrical conductance changes as the magnetic moment of one electrode (the storage layer) in the MJT switches direction. The switching of the magnetic moment is assisted by a phase transition interlayer that transitions from antiferromagnetic to ferromagnetic at a well defined, above ambient temperature.

摘要翻译： 一种磁存储器或MRAM存储器系统，其包括MRAM单元的MxN交叉列阵列。 每个存储单元存储具有可切换磁阻隧道结（MJT）的二进制数据位，其中电导通过MJT开关方向上的一个电极（存储层）的磁矩而变化。 磁矩的切换由相位转变中间层辅助，相位转变中间层在高于环境温度的情况下，从反铁磁转变为铁磁性。

公开(公告)号：US20070187785A1

公开(公告)日：2007-08-16

申请号：US11307658

申请日：2006-02-16

申请人： Chien-Chung Hung ,  Jian-Gang Zhu ,  Ming-Jer Kao

发明人： Chien-Chung Hung ,  Jian-Gang Zhu ,  Ming-Jer Kao

IPC分类号： H01L43/00

CPC分类号： H01L43/08 ,  H01L43/12

摘要： A magnetic memory cell and a manufacturing method for the magnetic memory cell are provided. In the magnetic memory cell, a pinned layer of a magnetic bottom electrode can be formed with sizes different from the free layer. The wider magnetic bottom electrode produces a preferable uniform bias field that will create a normal magnetization vector distribution in the end domain of the free layer, and thus achieving a preferred switching property. The above process can also be achieved through self-alignment. In addition, by adjusting the bias field of the bottom electrode, uniform field distribution over entire free layer can be significantly improved, and thus the magnetic memory cell will have a very low writing toggle current.

摘要翻译： 提供一种用于磁存储单元的磁存储单元和制造方法。 在磁存储单元中，可以形成与自由层不同的尺寸的磁性底部电极的钉扎层。 较宽的磁底电极产生优选的均匀偏磁场，其将在自由层的末端区域中产生正常磁化矢量分布，从而获得优选的开关特性。 上述过程也可以通过自对准来实现。 此外，通过调整底部电极的偏置场，可以显着改善整个自由层上的均匀场分布，因此磁存储单元将具有非常低的写入触发电流。

公开(公告)号：US20080019040A1

公开(公告)日：2008-01-24

申请号：US11490882

申请日：2006-07-21

申请人： Xiaochun Zhu ,  Jian-Gang Zhu

发明人： Xiaochun Zhu ,  Jian-Gang Zhu

IPC分类号： G11B5/127

CPC分类号： G11B5/1278 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3909

摘要： A perpendicular spin-torque-driven magnetic oscillator is disclosed. According to various embodiments, the magnetic oscillator comprises a magnetic reference stack, a magnetic oscillating stack, and an interlayer between the reference stack and the oscillating stack such that the reference stack and the oscillating stack are exchange coupled. The reference stack may have sufficient perpendicular anisotropy such that it causes, via the spin momentum transfer effect, the spin polarization of the conducting electrons in the oscillating stack to produce a spin torque on the local magnetization of the oscillating layer. As such, the oscillating stack may produce a sustained gyromagnetic oscillation around the perpendicular axis of the oscillating stack when (i) the oscillating stack and the reference stack have opposite magnetizations and (ii) there is a direct current flowing in the magnetic oscillator from the oscillating stack to the reference stack. Also, the oscillating stack may produce a sustained gyromagnetic oscillation when (i) the oscillating stack and the reference stack are magnetized in the same direction and (ii) there is a direct current flowing in the magnetic oscillator from the reference stack to the oscillating stack.

摘要翻译： 公开了一种垂直自旋转矩驱动磁振荡器。 根据各种实施例，磁性振荡器包括磁性参考堆叠，磁性振荡堆叠以及参考堆叠和振荡堆叠之间的中间层，使得参考堆叠和振荡堆叠被交换耦合。 参考叠层可具有足够的垂直各向异性，使得其通过自旋动量传递效应引起振荡堆叠中的导电电子的自旋极化，以产生振荡层的局部磁化上的自旋转矩。 因此，当（i）振荡堆叠和参考堆叠具有相反的磁化时，振荡堆叠可以在振荡堆叠的垂直轴周围产生持续的回旋磁振荡，并且（ii）存在从磁振荡器中流过的直流电流 振荡堆栈到参考堆栈。 此外，当（i）振荡堆叠和参考堆叠以相同的方向被磁化时，振荡堆叠可产生持续的回旋磁振荡，并且（ii）存在从磁参考堆栈流到振荡堆叠的直流电磁场 。

公开(公告)号：US07193286B2

公开(公告)日：2007-03-20

申请号：US11193775

申请日：2005-07-29

申请人： John M. Anderson ,  Jian-Gang Zhu

发明人： John M. Anderson ,  Jian-Gang Zhu

IPC分类号： H01L31/119 ,  H01L29/82 ,  H01L43/00 ,  H01L27/14

CPC分类号： H01F10/3254 ,  B82Y25/00 ,  G11C5/063 ,  G11C11/16

摘要： A ferromagnetic thin-film based array of directed magnetic field generating structures having a plurality of toroidally shaped layer stacks each with a pair of ferromagnetic material layers separated by an intermediate layer of nonmagnetic material. Electrical connections are made to opposite sides thereof. A serpentine first side electrical conductor is folded back so as to have parallel branches and together zigzag to cross over each stack on one side thereof. A serpentine second side electrical conductor, also folded back so as to have parallel branches, can be further provided with these branches together zigzagging to cross each stack on an opposite side thereof. These first and second side electrical conductors can be electrically joined to form an array electrical conductor.

摘要翻译： 一种基于铁磁性薄膜的定向磁场产生结构阵列，其具有多个环形层叠层，每个层叠层具有由非磁性材料的中间层隔开的一对铁磁材料层。 电连接被制成其相对侧。 蛇形第一侧电导体被折回以具有平行的分支，并且一起Z字形在其一侧上跨越每个堆叠。 还可以将具有平行分支的折回的蛇形第二侧电导体设置成这些分支，其一起以锯齿形的方式在其相对侧上交叉堆叠。 这些第一和第二侧电导体可以电连接以形成阵列电导体。

公开(公告)号：US5859754A

公开(公告)日：1999-01-12

申请号：US833058

申请日：1997-04-03

申请人： Hua-Ching Tong ,  Francis H. Liu ,  Minshen Tan ,  Robert Earl Rottmayer ,  Jian-Gang Zhu ,  Samuel W. Yuan

发明人： Hua-Ching Tong ,  Francis H. Liu ,  Minshen Tan ,  Robert Earl Rottmayer ,  Jian-Gang Zhu ,  Samuel W. Yuan

IPC分类号： G01R33/09 ,  G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G01R33/096 ,  G11B5/3954 ,  G11B2005/3996

摘要： Magnetic transducers are formed with common magnetic exchange layers capable of providing assertive and complementary signals. The transducers include an assertive transducer portion and a complementary transducer portion. Between the two transducer portions is a common bias portion which comprises an antiferromagnetic layer providing bias fields in different directions to the respective transducer portions. During normal operations, a current is directed into each of the transducer portions. The assertive transducer portion, being magnetically biased in one direction, generates a varying voltage as an assertive version of the electrical signal. The complementary transducer, being magnetically biased in another direction, generates another varying voltage as a complementary version of the electrical signal. In one embodiment, the transducer portions are implemented to operate as an anisotropic MR(AMR) sensor. In a second embodiment, the transducer portions operate as a giant MR(GMR) or spin valve sensor.