摘要:
A super-resolution material for recording and reproducing optical information, comprises a semiconductor material which has a transmittance that increases with an increasing intensity of the incident radiation, and one or more elements selected from the group consisting of nitrogen (N), oxygen (O), carbon (C) and boron (B).
摘要:
The present invention provides a non-volatile phase change memory cell containing an electrode contact layer disposed between a metal electrode layer and a phase change material layer, the electrode contact layer being formed of a transparent conducting oxide-based material which has a high electric conductivity, a low thermal conductivity and a good thermal stability. A non-volatile phase change memory cell according to the present invention may be utilized to reduce the electric power needed for reset and set operation.
摘要:
The present invention provides a phase change non-volatile memory material comprising a base material and at least one non-metallic light element selected from the group consisting of boron, carbon, nitrogen and oxygen, wherein the base material has a composition which corresponds to either that of congruent melting of the type with a minimum melting point or that of eutectic melting within the range of ±0.15 atomic fraction for each constituent element, thereby having a melting temperature of 600° C. or lower. The phase change non-volatile memory material according to the present invention may be utilized to reduce the electric power needed for reset/set operation and thermal interference between memory cells.
摘要:
The present invention provides a phase change memory cell comprising (GeASbBTeC)1-X(RaSbTeC)X solid solution, the solid solution being formed from a Ge—Sb—Te based alloy and a ternary metal alloy R—S—Te sharing same crystal structure as the Ge—Sb—Te based alloy. A nonvolatile phase change memory cell in accordance with the present invention provides many advantages such as high speed, high data retention, and multi-bit operation.
摘要:
The present invention provides a phase change non-volatile memory material comprising a base material and at least one non-metallic light element selected from the group consisting of boron, carbon, nitrogen and oxygen, wherein the base material has a composition which corresponds to either that of congruent melting of the type with a minimum melting point or that of eutectic melting within the range of ±0.15 atomic fraction for each constituent element, thereby having a melting temperature of 600° C. or lower. The phase change non-volatile memory material according to the present invention may be utilized to reduce the electric power needed for reset/set operation and thermal interference between memory cells.
摘要:
The present invention provides an optical recording medium in which the spot size of incident laser beam, focused on the medium by a far-field optic system characterized by λ and NA, is further reduced and maintained below the diffraction-limited size by means of material characteristics of the medium while reproducing from and recording on the information layer of the recording medium, thus making it possible to record and reproduce a high density of information exceeding the resolution limit of the optic system.A high density optical recording medium according to the present invention adopts a combination of two different super-resolution layers of mutually complementary optical characteristics with increasing light power.The combination of two super-resolution layers is made in either of two different types: for one type, each of the two super-resolution layers, having a respective threshold light intensity (or temperature) for the onset of change in optical transmittance, produces an increasing spot size of the transmitted beam with increasing light power once a respective threshold light intensity (or temperature) is exceeded, and for the other type, one layer produces an increasing spot size of the transmitted beam with increasing light power whereas the other layer exhibits a reverse trend.
摘要:
A color image sensor is disclosed. In one aspect, the color image sensor includes: a photo-sensitive cell having a lower electrode, an upper electrode, and a chalcogenide material located between the lower electrode and the upper electrode; and an image sensing circuit for measuring the wavelength or intensity of incident light based on an electric characteristic value generated from the photo-sensitive cell.
摘要:
A color image sensor is disclosed. In one aspect, the color image sensor includes: a photo-sensitive cell having a lower electrode, an upper electrode, and a chalcogenide material located between the lower electrode and the upper electrode; and an image sensing circuit for measuring the wavelength or intensity of incident light based on an electric characteristic value generated from the photo-sensitive cell.
摘要:
The present invention provides a non-volatile phase change memory cell containing an electrode contact layer disposed between a metal electrode layer and a phase change material layer, the electrode contact layer being formed of a transparent conducting oxide-based material which has a high electric conductivity, a low thermal conductivity and a good thermal stability. A non-volatile phase change memory cell according to the present invention may be utilized to reduce the electric power needed for reset and set operation.
摘要:
Disclosed is a waveguide type optical device utilizing a nonlinear refractive index change according to a large 3rd order nonlinear optical phenomenon. The waveguide type optical device includes a signal beam waveguide through which a signal beam propagates; and a pump beam waveguide through which a pump beam propagates, wherein the pump beam waveguide is disposed adjacent to the signal beam waveguide so that the pump beam can be coupled to the signal beam waveguide, the signal beam waveguide is made of nonlinear optical materials with large 3rd order nonlinear optical property and the pump beam waveguide is made of linear optical materials, and the wavelength range of the signal beam is different from that of the pump beam. By such a structure, the pump beam is coupled to one arm of the signal beam waveguide, thereby generating a 3rd nonlinear phenomenon on one arm of the waveguide through which the signal beam passes. Therefore, the waveguide optical device which implements an all-optical communication device operating as an optical device and can be integrated is provided.