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公开(公告)号:US20120119884A1
公开(公告)日:2012-05-17
申请号:US13291821
申请日:2011-11-08
申请人: Oliver Nehrig , Dirk Preikszat
发明人: Oliver Nehrig , Dirk Preikszat
CPC分类号: G06K19/07773 , G06K19/07766
摘要: An electronic device comprising a first node to be coupled to a first antenna, a second node coupled to a second antenna, a third node to be coupled to a third antenna, a first comparator coupled with a first input to the first node and with a second input to a second node, a second comparator coupled with a first input to the first node and with a second input to the third node, a third comparator coupled with a first input to the second node and with a second input to the third node. Each of the first, the second and the third comparators are configured to compare a first current and a second current at the first input and the second input.
摘要翻译: 一种电子设备,包括要耦合到第一天线的第一节点,耦合到第二天线的第二节点,要耦合到第三天线的第三节点,与第一节点耦合到第一节点的第一比较器, 第二输入到第二节点,第二比较器,其与第一输入耦合到第一节点,并且具有到第三节点的第二输入;第三比较器,与第一输入耦合到第二节点,并且第二输入耦合到第三节点 。 第一,第二和第三比较器中的每一个被配置为比较第一输入和第二输入处的第一电流和第二电流。
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公开(公告)号:US08941473B2
公开(公告)日:2015-01-27
申请号:US13291821
申请日:2011-11-08
申请人: Oliver Nehrig , Dirk Preikszat
发明人: Oliver Nehrig , Dirk Preikszat
IPC分类号: H04Q5/22 , H03K5/22 , G06K19/077
CPC分类号: G06K19/07773 , G06K19/07766
摘要: An electronic device comprising a first node to be coupled to a first antenna, a second node coupled to a second antenna, a third node to be coupled to a third antenna, a first comparator coupled with a first input to the first node and with a second input to a second node, a second comparator coupled with a first input to the first node and with a second input to the third node, a third comparator coupled with a first input to the second node and with a second input to the third node. Each of the first, the second and the third comparators are configured to compare a first current and a second current at the first input and the second input.
摘要翻译: 一种电子设备,包括要耦合到第一天线的第一节点,耦合到第二天线的第二节点,要耦合到第三天线的第三节点,与第一节点耦合到第一节点的第一比较器, 第二输入到第二节点,第二比较器,其与第一输入耦合到第一节点,并且具有到第三节点的第二输入;第三比较器,与第一输入耦合到第二节点,并且第二输入耦合到第三节点 。 第一,第二和第三比较器中的每一个被配置为比较第一输入端和第二输入端的第一电流和第二电流。
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公开(公告)号:US06734491B1
公开(公告)日:2004-05-11
申请号:US10331705
申请日:2002-12-30
申请人: Jozef C. Mitros , Imran Khan , William Nehrer , Lou Hutter , Dirk Preikszat
发明人: Jozef C. Mitros , Imran Khan , William Nehrer , Lou Hutter , Dirk Preikszat
IPC分类号: H01L29788
CPC分类号: H01L21/28273 , H01L27/115 , H01L29/42324
摘要: A semiconductor device (200) comprising a semiconductor substrate (210) having source and drain regions (530, 540) located in the semiconductor substrate (210) and having similar doping profiles, wherein a channel region (550) extends from the source region (530) to the drain region (540). The semiconductor device (200) also comprises a dielectric layer (230) located over the source and drain regions (530, 540), the dielectric layer (230) having first and second thicknesses (T1, T2) wherein the second thickness (T2) is substantially less than the first thickness (T1) and is partially located over the channel region (550). The semiconductor device (200) also comprises a gate (510) located over the dielectric layer (230) wherein the second thickness (T2) is located between an end (515) of the gate (510) and one of the source and drain regions (530, 540).
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