-
公开(公告)号：US07465615B1
公开(公告)日：2008-12-16
申请号：US11935714
申请日：2007-11-06
IPC分类号： H04L21/00
CPC分类号： G03F7/70441 , G03F1/36 , H01L21/0335 , H01L21/32139 , H01L21/76838
摘要： Methods of forming adjacent polyconductor line ends and a mask therefor are disclosed. In one embodiment, the method includes forming a polyconductor layer over an isolation region; forming a mask over the polyconductor layer, the mask including shapes to create the polyconductor line ends and a correction element to ensure a designed proximity of the polyconductor line ends; and etching the polyconductor layer using the patterned photoresist mask to create the adjacent polyconductor line ends, wherein the correction element is removed during the etching.
摘要翻译： 公开了形成相邻多导体线端的方法及其掩模。 在一个实施例中，该方法包括在隔离区域上形成多导体层; 在所述多导体层上形成掩模，所述掩模包括形成多导体线端的形状和校正元件，以确保多导体线的设计接近端; 以及使用图案化的光致抗蚀剂掩模蚀刻多导体层以产生相邻的多导体线端，其中在蚀刻期间去除校正元件。
-
公开(公告)号：US06777146B1
公开(公告)日：2004-08-17
申请号：US10248815
申请日：2003-02-21
申请人： Donald J. Samuels
发明人： Donald J. Samuels
IPC分类号： G03F900
CPC分类号： G03F1/36 , G03F7/70433 , G03F7/70441 , G06F17/50
摘要： A first aspect of the present invention is a method of determining an optical proximity correction for a primary feature having sub-resolution assist features for increasing the depth of focus of the primary features, comprising: generating a line/space pair; placing sub-resolution assist features on opposite sides of the line of the line/space pair; generating a set of linewidth biases; applying the set of linewidth biases to the line of the line/space pair to generate a set of biased-line/space pairs; determining for each biased-line/space pair, a deviation from a design linewidth of the line/space pair when the set of biased-line/space pairs are printed or simulated; and determining from the deviation a correction bias to apply to the line of the line/space pair. The invention also encompasses apparatus and computer programs for carrying out the methods.
摘要翻译： 本发明的第一方面是确定具有用于增加主要特征的焦深的子分辨率辅助特征的主要特征的光学邻近校正的方法，包括：产生线/空间对; 将副分辨率辅助特征放置在线/空间对的线的相对侧上; 产生一组线宽偏差; 将该组线宽偏置应用于线/空间对的线以生成一组偏置线/空间对; 确定每个偏置线/空间对，当印刷或模拟偏置线/空间对的集合时，偏离线/空间对的设计线宽; 并根据偏差确定校正偏差以应用于线/空间对的线。 本发明还包括用于执行这些方法的装置和计算机程序。
-
公开(公告)号：US5523186A
公开(公告)日：1996-06-04
申请号：US357889
申请日：1994-12-16
申请人： Burn J. Lin , Donald J. Samuels
发明人： Burn J. Lin , Donald J. Samuels
CPC分类号： G03F1/30 , G03F7/70283
摘要： A photolithographic technique and apparatus involving two exposures and the sectioning of a first original mask opening that has segments which conflict with a second original mask opening. A plurality of segmented openings are configured in a first mask including at least one phase shifted opening and at least one non-phase shifted opening. Imaging radiation is projected through the plurality of segmented openings onto at least two electromagnetic radiation application regions (EARs) on a surface to be imaged during one exposure, with one of the two EAR's being phase shifted and the other non-phase shifted. At least one segmented opening is formed in a second mask. Radiation is projected through the second mask segmented opening onto one or more EARs on the surface during another exposure. At least one of the second mask EARs interconnects at least one of the phase shifted EARs and one of the non-phase shifted EARs. The first mask is a split mask, the second mask is a cover mask and both masks may be on a single mask substrate.
摘要翻译： 涉及两个曝光的光刻技术和设备以及具有与第二原始掩模开口相冲突的部分的第一原始掩模开口的切片。 多个分段开口配置在包括至少一个相移开口和至少一个非相移开口的第一掩模中。 成像辐射通过多个分段开口投射到在一次曝光期间要成像的表面上的至少两个电磁辐射施加区域（EAR）上，其中两个EAR中的一个被相移并且另一个非相移。 在第二掩模中形成至少一个分段开口。 在另一曝光期间，辐射通过第二掩模分割开口投射到表面上的一个或多个EAR上。 第二掩模EAR中的至少一个将相移EAR和非相移EAR中的至少一个相互连接。 第一掩模是分割掩模，第二掩模是覆盖掩模，并且两个掩模可以在单个掩模基板上。
-
4.发明授权Method of optimizing exposure of photoresist by patterning as a function of thermal modeling 失效通过图案化来优化光致抗蚀剂的曝光作为热模型的函数的方法
公开(公告)号：US5304441A
公开(公告)日：1994-04-19
申请号：US999439
申请日：1992-12-31
申请人： Donald J. Samuels , Roger J. Yerdon
发明人： Donald J. Samuels , Roger J. Yerdon
IPC分类号： H01J37/302 , G03F7/02 , G03F7/20
CPC分类号： H01J37/3026 , H01J2237/31754 , H01J2237/31764 , H01J2237/31769 , Y10S430/143
摘要： A method of adjusting exposure of an energy beam to a lithographic resist sensitive to the energy beam, which method comprises determining where in a pattern to be exposed the energy level will exceed a critical thermal level, and adjusting the pattern and kind of exposure of the resist where the critical level is exceeded. One technique is to adjust the level exposure of the resist to a lower level equal to or less than the critical level with repeated exposures of the pattern in areas where the critical level is exceeded. The energy level monitored can be a thermal level measured as a temperature of the resist. A second technique is to adjust the exposure level by modifying the pattern and duration of exposure of the resist to a longer duration providing exposures equal to or less than the critical level with the modified pattern of exposures of the pattern in areas where the critical level is exceeded.
摘要翻译： 调整能量束对能量束敏感的光刻抗蚀剂的曝光的方法，该方法包括确定在暴露的图案中能量水平将超过临界热水平的位置，以及调整曝光的图案和种类 抵抗超过临界水平的地方。 一种技术是将抗蚀剂的水平曝光调整到等于或小于临界水平的较低水平，并在超过临界水平的区域重复曝光图案。 所监测的能级可以是作为抗蚀剂的温度测量的热水平。 第二种技术是通过将抗蚀剂的模式和曝光持续时间修改为更长的持续时间来提供曝光水平，以提供等于或小于临界水平的曝光，其中模式的修改模式在临界水平为 超过了
-
公开(公告)号：US07727825B2
公开(公告)日：2010-06-01
申请号：US12178072
申请日：2008-07-23
IPC分类号： H01L21/00
CPC分类号： G03F7/70441 , G03F1/36 , H01L21/0335 , H01L21/32139 , H01L21/76838
摘要： Methods of forming adjacent polyconductor line ends and a mask therefor are disclosed. In one embodiment, the method includes forming a polyconductor layer over an isolation region; forming a mask over the polyconductor layer, the mask including shapes to create the polyconductor line ends and a correction element to ensure a designed proximity of the polyconductor line ends; and etching the polyconductor layer using the patterned photoresist mask to create the adjacent polyconductor line ends, wherein the correction element is removed during the etching.
摘要翻译： 公开了形成相邻多导体线端的方法及其掩模。 在一个实施例中，该方法包括在隔离区域上形成多导体层; 在所述多导体层上形成掩模，所述掩模包括形成多导体线端的形状和校正元件，以确保多导体线的设计接近端; 以及使用图案化的光致抗蚀剂掩模蚀刻多导体层以产生相邻的多导体线端，其中在蚀刻期间去除校正元件。
-
公开(公告)号：US07715059B2
公开(公告)日：2010-05-11
申请号：US10690759
申请日：2003-10-22
CPC分类号： H04N1/00832 , H04N1/00912 , H04N1/32005 , H04N1/32021 , H04N1/32026 , H04N2201/0093
摘要： A method, system and program product for comparing a junk fax image stored in a database to an incoming facsimile image to determine whether the incoming facsimile image is a junk fax. If the facsimile image is a junk fax, the image is either deleted or the communication terminated. The invention also provides a junk fax determinator by which an incoming facsimile image can be designated as a junk fax. In one embodiment, a recipient (user) can make the determination as to whether the incoming facsimile image is a junk fax and generate a personal junk fax database. In another embodiment, the recipient (user) can scan a hard copy document to form an incoming facsimile image, which can be saved as a junk fax in a personal junk fax database.
摘要翻译： 一种用于将存储在数据库中的垃圾传真图像与传入传真图像进行比较以确定传入传真图像是否为垃圾传真的方法，系统和程序产品。 如果传真图像是垃圾传真，则图像被删除或通信终止。 本发明还提供了一种垃圾传真确定器，通过该确定器可将传入的传真图像指定为垃圾传真。 在一个实施例中，接收者（用户）可以确定传入的传真图像是否是垃圾传真并生成个人垃圾传真数据库。 在另一个实施例中，接收者（用户）可以扫描硬拷贝文件以形成传入传真图像，其可以作为垃圾传真保存在个人垃圾传真数据库中。
-
公开(公告)号：US20090117737A1
公开(公告)日：2009-05-07
申请号：US12178072
申请日：2008-07-23
CPC分类号： G03F7/70441 , G03F1/36 , H01L21/0335 , H01L21/32139 , H01L21/76838
摘要： Methods of forming adjacent polyconductor line ends and a mask therefor are disclosed. In one embodiment, the method includes forming a polyconductor layer over an isolation region; forming a mask over the polyconductor layer, the mask including shapes to create the polyconductor line ends and a correction element to ensure a designed proximity of the polyconductor line ends; and etching the polyconductor layer using the patterned photoresist mask to create the adjacent polyconductor line ends, wherein the correction element is removed during the etching.
摘要翻译： 公开了形成相邻多导体线端的方法及其掩模。 在一个实施例中，该方法包括在隔离区域上形成多导体层; 在所述多导体层上形成掩模，所述掩模包括形成多导体线端的形状和校正元件，以确保多导体线的设计接近端; 以及使用图案化的光致抗蚀剂掩模蚀刻多导体层以产生相邻的多导体线端，其中在蚀刻期间去除校正元件。
-
公开(公告)号：US20090065956A1
公开(公告)日：2009-03-12
申请号：US11853358
申请日：2007-09-11
IPC分类号： H01L23/48
CPC分类号： G11C5/063 , H01L27/0207 , H01L27/105 , H01L27/1052 , H01L27/11 , H01L27/115
摘要： Methods of forming line ends and a related memory cell including the line ends are disclosed. In one embodiment, the memory cell includes fa first device having a first conductive line extending over a first active region and having a first line end of the first conductive line positioned over an isolation region adjacent to the first active region; and a second device having a second conductive line extending over one of a second active region and a contact element and having a second line end of the second conductive line positioned over the isolation region adjacent to the one of the second active region and the contact element, wherein the first line end and the second line end each include a bulbous end that is distanced from a respective active region or contact element.
摘要翻译： 公开了形成线端的方法和包括线端的相关存储单元。 在一个实施例中，存储单元包括fa第一器件，其具有在第一有源区上延伸的第一导线，并且第一导线的第一线端位于与第一有源区相邻的隔离区上; 以及第二装置，具有延伸到第二有源区和接触元件之一上的第二导线，并且第二导线的第二线端位于与第二有源区和接触元件中的一个相邻的隔离区上方 ，其中所述第一线端和所述第二线端各自包括与相应的有源区域或接触元件间隔开的球状端。
-
9.发明授权公开(公告)号：US07043712B2
公开(公告)日：2006-05-09
申请号：US10605102
申请日：2003-09-09
IPC分类号： G06F17/50
CPC分类号： G03F1/36 , G06F17/5081
摘要： A method of designing lithographic masks is provided where mask segments used in a model-based optical proximity correction (MBOPC) scheme are adaptively refined based on local image information, such as image intensity, gradient and curvature. The values of intensity, gradient and curvature are evaluated locally at predetermined evaluation points associated with each segment. An estimate of the image intensity between the local evaluation points is preferably obtained by curve fitting based only on values at the evaluation points. The decision to refine a segment is based on the deviation of the simulated image threshold contour from the target image threshold contour. The output mask layout will provide an image having improved fit to the target image, without a significant increase in computation cost.
摘要翻译： 提供一种设计光刻掩模的方法，其中基于模型的光学邻近校正（MBOPC）方案中使用的掩模段基于局部图像信息（诸如图像强度，梯度和曲率）自适应地进行改进。 在与每个片段相关联的预定评估点处本地评估强度，梯度和曲率的值。 优选通过仅基于评价点的值的曲线拟合来获得局部评价点之间的图像强度的估计。 细化段的决定是基于模拟图像阈值轮廓与目标图像阈值轮廓的偏差。 输出掩模布局将提供对目标图像具有改进拟合的图像，而不显着增加计算成本。
-
公开(公告)号：US06268907B1
公开(公告)日：2001-07-31
申请号：US09078288
申请日：1998-05-13
申请人： Donald J. Samuels , Alan C. Thomas
发明人： Donald J. Samuels , Alan C. Thomas
IPC分类号： G03B2754
CPC分类号： G03F7/70191 , G03F7/70091 , G03F7/70583
摘要： The present invention provides a method and an optical lithographic system which eliminates the standing wave effect typically observed in photoresists without the need for altering the thickness of the photoresist, utilizing an anti-reflective coating material, or changing the light source. Specifically, the present invention compensates for standing waves by exposing the photoresist with light from a light source at different phases. That is, in the present invention there is a change in light exposure from a single dose at one phase to a plurality of doses at different phases; therefore dispersing the effects of the standing wave at each of those phases which in turn eliminates the standing wave.
摘要翻译： 本发明提供了一种方法和光学光刻系统，其消除通常在光致抗蚀剂中观察到的驻波效应，而不需要改变光致抗蚀剂的厚度，利用抗反射涂层材料或改变光源。 具体地说，本发明通过用来自不同相位的光源的光使光致抗蚀剂曝光来补偿驻波。 也就是说，在本发明中，在一个阶段的单一剂量到不同阶段的多个剂量的光照变化; 因此将驻波的影响分散在各个阶段，这又消除了驻波。
-
-
-
-
-
-
-
-
-
搜索结果
20 条记录 (耗时 0.014 秒)
