利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

5 条记录 (耗时 0.012 秒)

    Lithographic process for device fabrication using a multilayer mask which has been previously inspected
    1.
    发明授权
    Lithographic process for device fabrication using a multilayer mask which has been previously inspected 失效
    使用先前检查过的多层掩模的器件制造的平版印刷工艺

    公开(公告)号：US06042995A

    公开(公告)日：2000-03-28

    申请号：US987491

    申请日：1997-12-09

    申请人： Donald Lawrence White

    发明人： Donald Lawrence White

    IPC分类号： G03F1/00 ,  G03F1/24 ,  G03F1/84 ,  H01L21/027 ,  G01N21/88 ,  G03F7/00

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F1/84

    摘要： A lithographic process for semiconductor device fabrication is disclosed. In the process a patterned mask having a multilayer film formed on a substrate is illuminated by extreme ultraviolet (EUV) radiation and the radiation reflected from the pattern mask is directed onto a layer of energy sensitive material formed on a substrate. The image of the pattern on the mask is thus introduced into the energy sensitive material. The image is then developed and transferred into the underlying substrate. The multilayer film is inspected for defects by applying a layer of energy-sensitive film (called the inspection film) in proximity to the multilayer film and exposing the energy-sensitive material to EUV radiation. The thickness of the multilayer film is such that a portion of the EUV radiation is transmitted through the inspection film, reflected from the multilayer film and back into the inspection film. The exposed inspection film is then developed, and the developed inspection film is inspected to determine if it indicates the presence of defects in the underlying multilayer film.

    摘要翻译： 公开了一种用于半导体器件制造的光刻工艺。 在该过程中，具有形成在衬底上的多层膜的图案掩模被极紫外（EUV）辐射照射，并且从图案掩模反射的辐射被引导到形成在衬底上的能量敏感材料层。 因此，掩模上的图案的图像被引入到能量敏感材料中。 然后将图像显影并转移到下面的基底中。 通过在多层膜附近施加一层能量敏感膜（称为检查膜）并将能量敏感材料暴露于EUV辐射来检查多层膜的缺陷。 多层膜的厚度使得EUV辐射的一部分透过检查膜，从多层膜反射回到检查膜中。 然后曝光的检查膜被开发，并且检查显影的检查膜以确定其是否表示在下面的多层膜中存在缺陷。

    Methods for determining feature-size accuracy of circuit patterns
    3.
    发明授权
    Methods for determining feature-size accuracy of circuit patterns 失效
    确定电路图形特征尺寸精度的方法

    公开(公告)号：US3998639A

    公开(公告)日：1976-12-21

    申请号：US525210

    申请日：1974-11-19

    申请人： Martin Feldman ,  Donald Lawrence White

    发明人： Martin Feldman ,  Donald Lawrence White

    IPC分类号： G03C5/02 ,  G03C9/02 ,  G03C5/00

    CPC分类号： G03C9/02 ,  G03C5/02

    摘要： In IC fabrication, feature size accuracy is monitored by making a test pattern composed of grating lines in proximity to two reference patterns. With the proper feature size, the test pattern will visually appear to have a shade of grey intermediate that of the two reference patterns. Too small a feature size will make the test pattern lighter, while too large a feature size will make it appear darker.

    摘要翻译： 在IC制造中，通过将由格栅线组成的测试图形靠近两个参考图案来监视特征尺寸精度。 具有适当的特征尺寸，测试图案将在视觉上看起来具有两个参考图案之间的灰色中间色调。 太小的功能尺寸将使测试图案更轻，而功能尺寸过大会使其看起来更暗。

    Lithographic process for device fabrication using dark-field illumination
    4.
    发明授权
    Lithographic process for device fabrication using dark-field illumination 有权
    使用暗场照明的器件制造的平版印刷工艺

    公开(公告)号：US06379868B1

    公开(公告)日：2002-04-30

    申请号：US09283528

    申请日：1999-04-01

    申请人： Donald Lawrence White

    发明人： Donald Lawrence White

    IPC分类号： G03F700

    CPC分类号： G03F1/34 ,  G03F7/701 ,  G03F7/70125 ,  G03F7/70308 ,  G03F7/70325

    摘要： A lithographic apparatus and process that utilizes dark-field imaging of mask features to introduce an image of those features into an energy sensitive resist material is disclosed. Dark field imaging is accomplished by utilizing off-axis illumination in combination with one or more masks. The zero-order off-axis illumination is lost from the system and is not captured from the downstream imaging optics. The mask or mask contains both lithographic features and non-imaged features. The non-imaged features are too small to be resolved by the imaging optics used to introduce the image into the energy sensitive material. The lithographic features and non-imaged features associated with a particular pattern feature are either present on the same mask, or decoupled where the non-imaged features are on one mask and the lithographic features are on a second mask.

    摘要翻译： 公开了一种使用掩模特征的暗场成像将这些特征的图像引入能量敏感抗蚀剂材料的光刻设备和方法。 通过利用离轴照明与一个或多个掩模结合来实现暗场成像。 零级离轴照明从系统中丢失并且不从下游成像光学器件捕获。 掩模或掩模包含光刻特征和非成像特征。 非成像特征太小，不能通过用于将图像引入能量敏感材料的成像光学元件来解决。 与特定图案特征相关联的光刻特征和非成像特征或者存在于相同的掩模上，或者在非成像特征位于一个掩模上的情况下解耦，并且光刻特征位于第二掩模上。