Method for improved cleaning of substrate processing systems
    1.
    发明授权
    Method for improved cleaning of substrate processing systems 失效
    改善基材处理系统清洗的方法

    公开(公告)号:US6125859A

    公开(公告)日:2000-10-03

    申请号:US893922

    申请日:1997-07-11

    摘要: A method for a multiple-stage microwave plasma cleaning technique for efficiently cleaning a substrate processing chamber. In a specific embodiment, a two-stage cleaning process is described. The first stage begins by flowing a reactive gas from a gas source into a processing chamber where microwaves ignite and maintain a plasma from the reactive gas. Reactive radicals generated which react with residues on the interior surfaces of the processing chamber. In the second stage, an inert gas is flowed into the processing chamber in addition to the reactive gas. Microwaves then ignite and maintain a plasma from the reactive gas and optionally, the inert gas as well. Optionally, an inert gas can be flowed into the processing chamber prior to the first stage to remove loose particles from the processing chamber. The reactive gas in such embodiments is preferably NF.sub.3, but other fluorine-containing gases such as carbon tetrafluoride (CF.sub.4) or sulfur hexafluoride (SF.sub.6) may also be used. Moreover, chlorine- or other halogen-containing gases may also be used as the reactive gas in other embodiments in place of fluorine-containing gases.

    摘要翻译: 一种用于高效清洗基板处理室的多级微波等离子体清洗技术的方法。 在具体实施例中,描述了两阶段清洁过程。 第一阶段开始于将反应气体从气体源流入处理室,其中微波点燃并维持来自反应气体的等离子体。 所产生的反应性基团与处理室内表面上的残留物反应。 在第二阶段中,除了反应性气体之外,惰性气体也流入处理室。 微波然后点燃和维持来自反应气体的等离子体以及任选的惰性气体。 任选地,惰性气体可以在第一阶段之前流入处理室以从处理室去除松散的颗粒。 在这些实施方案中,反应性气体优选为NF 3,但也可以使用其它含氟气体如四氟化碳(CF 4)或六氟化硫(SF 6)。 此外,在其它实施方案中,也可以使用氯或其它含卤素的气体作为反应气体来代替含氟气体。