-
公开(公告)号：US20090004458A1
公开(公告)日：2009-01-01
申请号：US11771683
申请日：2007-06-29
申请人： Robert J. Falster , Vladimir V. Voronkov , Luca Moiraghi , DongMyun Lee , Chanrae Cho , Marco Ravani
发明人： Robert J. Falster , Vladimir V. Voronkov , Luca Moiraghi , DongMyun Lee , Chanrae Cho , Marco Ravani
CPC分类号： H01L21/2205 , H01L21/26506 , H01L21/3225 , Y10T428/249961
摘要： This invention generally relates to a process for suppressing silicon self-interstitial diffusion near the substrate/epitaxial layer interface of an epitaxial silicon wafer having a heavily doped silicon substrate and a lightly doped silicon epitaxial layer. Interstitial diffusion into the epitaxial layer is suppressed by a silicon self-interstitial sink layer comprising dislocation loops.
摘要翻译： 本发明总体上涉及一种用于抑制硅掺杂硅衬底和轻掺杂硅外延层的外延硅晶片的衬底/外延层界面附近的硅自间隙扩散的方法。 通过包含位错环的硅自间隙沉积层来抑制进入外延层的间隙扩散。
-
2.发明申请Suppression of Oxygen Precipitation in Heavily Doped Single Crystal Silicon Substrates 审中-公开在重掺杂的单晶硅衬底中抑制氧沉淀公开(公告)号：US20090004426A1
公开(公告)日：2009-01-01
申请号：US11771667
申请日：2007-06-29
申请人： Robert J. Falster , Luca Moiraghi , DongMyun Lee , Chanrae Cho , Marco Ravani
发明人： Robert J. Falster , Luca Moiraghi , DongMyun Lee , Chanrae Cho , Marco Ravani
CPC分类号： H01L21/3225 , Y10T428/21
摘要： This invention generally relates to a process for suppressing oxygen precipitation in epitaxial silicon wafers having a heavily doped silicon substrate and a lightly N-doped silicon epitaxial layer by dissolving existing oxygen clusters and precipitates within the substrate. Furthermore, the formation of oxygen precipitates is prevented upon subsequent oxygen precipitation heat treatment.
摘要翻译： 本发明一般涉及一种通过将现有的氧簇和沉淀物溶解在衬底中来抑制具有重掺杂硅衬底和轻掺杂N掺杂硅外延层的外延硅晶片中的氧沉淀的方法。 此外，在随后的氧沉淀热处理时，防止形成氧析出物。
-
3.发明申请EPITAXIAL WAFER HAVING A HEAVILY DOPED SUBSTRATE AND PROCESS FOR THE PREPARATION THEREOF 审中-公开具有重层基底的外延片及其制备方法公开(公告)号：US20110250739A1
公开(公告)日：2011-10-13
申请号：US13165430
申请日：2011-06-21
申请人： Robert J. Falster , Vladimir V. Voronkov , Luca Moiraghi , DongMyun Lee , Chanrae Cho , Marco Ravani
发明人： Robert J. Falster , Vladimir V. Voronkov , Luca Moiraghi , DongMyun Lee , Chanrae Cho , Marco Ravani
IPC分类号： H01L21/20
CPC分类号： H01L21/2205 , H01L21/26506 , H01L21/3225 , Y10T428/249961
摘要： This invention generally relates to a process for suppressing silicon self-interstitial diffusion near the substrate/epitaxial layer interface of an epitaxial silicon wafer having a heavily doped silicon substrate and a lightly doped silicon epitaxial layer. Interstitial diffusion into the epitaxial layer is suppressed by a silicon self-interstitial sink layer comprising dislocation loops.
摘要翻译： 本发明总体上涉及一种用于抑制硅掺杂硅衬底和轻掺杂硅外延层的外延硅晶片的衬底/外延层界面附近的硅自间隙扩散的方法。 通过包含位错环的硅自间隙沉积层来抑制进入外延层的间隙扩散。
-
4.发明申请EPITAXIAL WAFER HAVING A HEAVILY DOPED SUBSTRATE AND PROCESS FOR THE PREPARATION THEREOF 审中-公开具有重层基底的外延片及其制备方法公开(公告)号：US20090252974A1
公开(公告)日：2009-10-08
申请号：US12486569
申请日：2009-06-17
申请人： Robert J. Falster , Vladimir V. Voronkov , Luca Moiraghi , DongMyun Lee , Chanrae Cho , Marco Ravani
发明人： Robert J. Falster , Vladimir V. Voronkov , Luca Moiraghi , DongMyun Lee , Chanrae Cho , Marco Ravani
CPC分类号： H01L21/2205 , H01L21/26506 , H01L21/3225 , Y10T428/249961
摘要： This invention generally relates to a process for suppressing silicon self-interstitial diffusion near the substrate/epitaxial layer interface of an epitaxial silicon wafer having a heavily doped silicon substrate and a lightly doped silicon epitaxial layer. Interstitial diffusion into the epitaxial layer is suppressed by a silicon self-interstitial sink layer comprising dislocation loops.
摘要翻译： 本发明总体上涉及一种用于抑制硅掺杂硅衬底和轻掺杂硅外延层的外延硅晶片的衬底/外延层界面附近的硅自间隙扩散的方法。 通过包含位错环的硅自间隙沉积层来抑制进入外延层的间隙扩散。
-
5.发明申请SUPPRESSION OF OXYGEN PRECIPITATION IN HEAVILY DOPED SINGLE CRYSTAL SILICON SUBSTRATES 审中-公开抑制重金属单晶硅基质中的氧沉降公开(公告)号：US20110177682A1
公开(公告)日：2011-07-21
申请号：US13020957
申请日：2011-02-04
申请人： Robert J. Falster , Luca Moiraghi , DongMyun Lee , Chanrae Cho , Marco Ravani
发明人： Robert J. Falster , Luca Moiraghi , DongMyun Lee , Chanrae Cho , Marco Ravani
CPC分类号： H01L21/3225 , Y10T428/21
摘要： This invention generally relates to a process for suppressing oxygen precipitation in epitaxial silicon wafers having a heavily doped silicon substrate and a lightly N-doped silicon epitaxial layer by dissolving existing oxygen clusters and precipitates within the substrate. Furthermore, the formation of oxygen precipitates is prevented upon subsequent oxygen precipitation heat treatment.
摘要翻译： 本发明一般涉及一种通过将现有的氧簇和沉淀物溶解在衬底中来抑制具有重掺杂硅衬底和轻掺杂N掺杂硅外延层的外延硅晶片中的氧沉淀的方法。 此外，在随后的氧沉淀热处理时，防止形成氧析出物。
-
-
-
-
搜索结果
5 条记录 (耗时 0.01 秒)
