Semiconductor optoelectronic device with electrically adjustable transfer function
    10.
    发明申请
    Semiconductor optoelectronic device with electrically adjustable transfer function 有权
    半导体光电器件具有电气可调的传递功能

    公开(公告)号:US20030107034A1

    公开(公告)日:2003-06-12

    申请号:US10233848

    申请日:2002-09-03

    IPC分类号: H01L029/06

    摘要: The invention concerns an optoelectronic device comprising at alteration of at least three semiconductor layers with selected shape, and two air layers. The semiconductor layers having N-type or P-type doping which may differ or not from one layer to the next layer, are separated by spacers whereof the doping is non-intentional (I-type) or intentional (N-type or P-type) to define a PINIP or NIPIN structure with air cavities, and are adapted to be set at selected respective electric potentials. The respective thicknesses and compositions of the layers and the spacers are selected so that the structure has at least an optical transfer function adapted to light to be treated and adjustable in accordance with the selected potentials applied to the semiconductor layers.

    摘要翻译: 本发明涉及一种光电器件,其包括至少三个具有所选形状的半导体层和两个空气层的改变。 具有N型或P型掺杂的半导体层可以从一层到下一层不同或不同,通过间隔物分离,掺杂是非有意的(I型)或有意的(N-型或P-型掺杂) 类型)以定义具有空气腔的PINIP或NIPIN结构,并且适于被设置在选定的各个电位。 选择层和间隔物的各自的厚度和组成,使得该结构至少具有适于根据施加到半导体层的所选电位而被处理和可调节的光的光学传递函数。