公开(公告)号：US20100022076A1

公开(公告)日：2010-01-28

申请号：US12177750

申请日：2008-07-22

申请人： Ludovic Godet ,  George D. Papasouliotis ,  Edwin Arevalo

发明人： Ludovic Godet ,  George D. Papasouliotis ,  Edwin Arevalo

IPC分类号： H01L21/265

CPC分类号： H01L21/2236 ,  H01J37/32412 ,  H01J2237/31701 ,  H01L21/26513

摘要： A method of plasma doping includes providing a dopant gas comprising a dopant heavy halogenide compound gas to a plasma chamber. A plasma is formed in the plasma chamber with the dopant heavy halogenide compound gas and generates desired dopant ions and heavy fragments of precursor dopant molecule. A substrate in the plasma chamber is biased so that the desired dopant ions impact the substrate with a desired ion energy, thereby implanting the desired dopant ions and the heavy fragments of precursor dopant molecule into the substrate, wherein at least one of the ion energy and composition of the dopant heavy halogenide compound is chosen so that the implant profile in the substrate is substantially determined by the desired dopant ions.

摘要翻译： 等离子体掺杂的方法包括向等离子体室提供包含掺杂剂重卤化物化合物气体的掺杂剂气体。 在掺杂剂重卤化物化合物气体的等离子体室中形成等离子体，并产生所需的掺杂剂离子和前体掺杂剂分子的重质碎片。 等离子体室中的衬底被偏置，使得期望的掺杂剂离子以期望的离子能量冲击衬底，从而将期望的掺杂剂离子和前体掺杂剂分子的重的片段注入到衬底中，其中离子能和 选择掺杂剂重卤化物化合物的组成，使得衬底中的注入分布基本上由所需的掺杂剂离子决定。

公开(公告)号：US07927986B2

公开(公告)日：2011-04-19

申请号：US12177750

申请日：2008-07-22

申请人： Ludovic Godet ,  George D. Papasouliotis ,  Edwin Arevalo

发明人： Ludovic Godet ,  George D. Papasouliotis ,  Edwin Arevalo

IPC分类号： H01L21/26

CPC分类号： H01L21/2236 ,  H01J37/32412 ,  H01J2237/31701 ,  H01L21/26513

摘要： A method of plasma doping includes providing a dopant gas comprising a dopant heavy halogenide compound gas to a plasma chamber. A plasma is formed in the plasma chamber with the dopant heavy halogenide compound gas and generates desired dopant ions and heavy fragments of precursor dopant molecule. A substrate in the plasma chamber is biased so that the desired dopant ions impact the substrate with a desired ion energy, thereby implanting the desired dopant ions and the heavy fragments of precursor dopant molecule into the substrate, wherein at least one of the ion energy and composition of the dopant heavy halogenide compound is chosen so that the implant profile in the substrate is substantially determined by the desired dopant ions.

摘要翻译： 等离子体掺杂的方法包括向等离子体室提供包含掺杂剂重卤化物化合物气体的掺杂剂气体。 在掺杂剂重卤化物化合物气体的等离子体室中形成等离子体，并产生所需的掺杂剂离子和前体掺杂剂分子的重质碎片。 等离子体室中的衬底被偏置，使得期望的掺杂剂离子以期望的离子能量冲击衬底，从而将期望的掺杂剂离子和前体掺杂剂分子的重的片段注入到衬底中，其中离子能和 选择掺杂剂重卤化物化合物的组成，使得衬底中的注入分布基本上由所需的掺杂剂离子决定。

公开(公告)号：US20080318345A1

公开(公告)日：2008-12-25

申请号：US11766984

申请日：2007-06-22

申请人： Harold M. Persing ,  Vikram Singh ,  Edwin Arevalo

发明人： Harold M. Persing ,  Vikram Singh ,  Edwin Arevalo

IPC分类号： H01L21/265 ,  G01B9/02 ,  G21K5/00

CPC分类号： G01N21/55 ,  G01N2021/8416 ,  H01J37/32412 ,  H01J37/32935

摘要： An approach that determines an ion implantation processing characteristic in a plasma ion implantation of a substrate is described. In one embodiment, there is a light source configured to direct radiation onto the substrate. A detector is configured to measure radiation reflected from the substrate. A processor is configured to correlate the measured radiation reflected from the substrate to an ion implantation processing characteristic.

摘要翻译： 描述了确定衬底的等离子体离子注入中的离子注入处理特性的方法。 在一个实施例中，存在被配置为将辐射引导到衬底上的光源。 检测器被配置成测量从衬底反射的辐射。 处理器被配置为将从衬底反射的测量的辐射与离子注入处理特性相关联。

公开(公告)号：US20070224840A1

公开(公告)日：2007-09-27

申请号：US11687822

申请日：2007-03-19

申请人： Anthony Renau ,  Vikram Singh ,  Atul Gupta ,  Timothy Miller ,  Edwin Arevalo ,  George Papasouliotis ,  Yong Bae Jeon

发明人： Anthony Renau ,  Vikram Singh ,  Atul Gupta ,  Timothy Miller ,  Edwin Arevalo ,  George Papasouliotis ,  Yong Bae Jeon

IPC分类号： H01L21/00 ,  H01L21/336 ,  H01L21/22 ,  H01L21/38

CPC分类号： H01J37/32935 ,  H01J37/32412 ,  H01J37/3299 ,  H01L22/20

摘要： A method of selecting plasma doping process parameters includes determining a recipe parameter database for achieving at least one plasma doping condition. The initial recipe parameters are determined from the recipe parameter database. In-situ measurements of at least one plasma doping condition are performed. The in-situ measurements of the at least one plasma doping condition are correlated to at least one plasma doping result. At least one recipe parameter is changed in response to the correlation so as to improve at least one plasma doping process performance metric.

摘要翻译： 选择等离子体掺杂工艺参数的方法包括确定用于实现至少一种等离子体掺杂条件的配方参数数据库。 从配方参数数据库确定初始配方参数。 进行至少一个等离子体掺杂条件的原位测量。 至少一种等离子体掺杂条件的原位测量与至少一种等离子体掺杂结果相关。 响应于相关性改变至少一个配方参数，以便改进至少一个等离子体掺杂工艺性能度量。

公开(公告)号：US20050260838A1

公开(公告)日：2005-11-24

申请号：US10434973

申请日：2003-05-09

申请人： Daniel Downey ,  Edwin Arevalo

发明人： Daniel Downey ,  Edwin Arevalo

IPC分类号： H01L21/26 ,  H01L21/265 ,  H01L21/268 ,  H01L21/324 ,  H01L21/425

CPC分类号： H01L21/26513 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/2658 ,  H01L21/268 ,  H01L21/324

摘要： A method for activating a first ionic species implanted in a semiconductor, including annealing the semiconductor using a controlled diffusion annealing, and controlling the oxygen content during the annealing to redistribute the first ionic species such that the abruptness of the implanted profile is increased after the annealing. Also, a method is provided for forming a junction in a semiconductor, including implanting a first ionic species in the semiconductor, post-implanting at least one second ionic species where the at least one second ionic species includes at least one of an atomic weight and a molecular weight that is substantially the same or greater than at least one of the first ionic species' atomic weight and molecular weight, and, annealing the semiconductor using a controlled diffusion annealing, where the abruptness of the profile is decreased after annealing such that the junction dimensions are minimized with respect to the junction dimensions of the as-implanted profile of the first ionic species.

摘要翻译： 一种用于激活注入到半导体中的第一离子物质的方法，包括使用受控扩散退火退火半导体，以及控制退火期间的氧含量以重新分配第一离子物质，使得在退火之后，注入轮廓的突然性增加 。 此外，提供了一种用于在半导体中形成结的方法，包括在半导体中注入第一离子物质，后植入至少一个第二离子物质，其中至少一个第二离子物质包括原子量和 基本上等于或大于第一离子种类的原子量和分子量中的至少一个的分子量，以及使用受控扩散退火退火半导体，其中在退火之后，轮廓的突然性降低，使得 相对于第一离子物质的植入轮廓的接合尺寸，接合尺寸被最小化。