Thermally conductive conformal media
    1.
    发明授权
    Thermally conductive conformal media 失效
    导热保形介质

    公开(公告)号:US06220607B1

    公开(公告)日:2001-04-24

    申请号:US09062380

    申请日:1998-04-17

    IPC分类号: F16J1500

    摘要: A thermally conductive medium includes a body with a first melting point and phase-changing material encapsulating a portion of the body, with the phase-changing material having a second melting point. The first melting point is greater than the second melting point, and the phase-changing material is configured to be in a liquid phase at temperatures above the second melting point and a solid phase at temperatures below the same. In the liquid phase, an adhesive force is present between the body and the phase-changing material due to capillary attraction, and the phase-changing material may be wettable to one of the two surfaces.

    摘要翻译: 导热介质包括具有第一熔点的主体和封装该体的一部分的相变材料,相变材料具有第二熔点。 第一个熔点大于第二个熔点,并且相变材料被配置为在高于第二个熔点的温度下处于液相,在低于相同温度的温度下是固相。 在液相中,由于毛细管吸引,在本体和相变材料之间存在粘合力,并且相变材料可以被润湿到两个表面之一。

    Process chamber having improved gas distributor and method of manufacture
    6.
    发明授权
    Process chamber having improved gas distributor and method of manufacture 失效
    具有改进的气体分配器和制造方法的处理室

    公开(公告)号:US06263829B1

    公开(公告)日:2001-07-24

    申请号:US09235861

    申请日:1999-01-22

    IPC分类号: C23C1644

    CPC分类号: C23C16/45521 C23C16/455

    摘要: A process chamber 15 for processing a substrate 30, such as a semiconductor wafer, comprises a support 20 having a surface 25 for supporting the substrate 30. A gas distributor 50 in the chamber comprises a gas manifold 110 comprising at least one insert 140 having an orifice 115 for passing gas from the gas manifold 110 into the process chamber 15. Preferably, the gas manifold 110 extends about a perimeter 130 of the substrate 30 and comprises a plurality of inserts 140 made from dielectric material.

    摘要翻译: 用于处理衬底30(例如半导体晶片)的处理室15包括具有用于支撑衬底30的表面25的支撑件20.腔室中的气体分配器50包括气体歧管110,气体歧管110包括至少一个插入件140,其具有 孔115用于将气体从气体歧管110传送到处理室15.优选地,气体歧管110围绕衬底30的周边130延伸,并且包括由介电材料制成的多个插入件140。

    Process chamber having improved temperature control
    7.
    发明授权
    Process chamber having improved temperature control 失效
    处理室具有改进的温度控制

    公开(公告)号:US06440221B2

    公开(公告)日:2002-08-27

    申请号:US09082430

    申请日:1998-05-20

    IPC分类号: C23C1600

    摘要: A temperature control system 145 is used to control the temperature of a process chamber 25 during processing of a semiconductor substrate 70. The temperature control system 145 comprises a heat exchanger plate 155 for removing heat from the chamber 25, and a heat transfer member 158 for conducting heat to the heat exchanger plate 155. The heat transfer member 158 comprises a lower heat conduction surface 205 bonded to an external surface of the chamber 25, and an upper heat transmitting surface 210 thermally coupled to the heat exchanger plate 155. Preferably, the temperature control assembly comprises a heater 150 for heating the chamber 25, and a computer control system 165 for regulating the heat removed by the heat exchanger plate 155 as well as the heat supplied by the heater 150, to maintain the chamber 25 at substantially uniform temperatures.

    摘要翻译: 温度控制系统145用于在半导体衬底70的加工期间控制处理室25的温度。温度控制系统145包括用于从腔室25除去热量的热交换器板155和用于 向热交换器板155传导热量。传热构件158包括结合到室25的外表面的下导热表面205和热耦合到热交换器板155的上传热表面210.优选地, 温度控制组件包括用于加热室25的加热器150和用于调节由热交换器板155移除的热量的计算机控制系统165以及由加热器150供应的热量,以将室25保持在基本均匀的温度 。