公开(公告)号：US06220607B1

公开(公告)日：2001-04-24

申请号：US09062380

申请日：1998-04-17

申请人： Gerhard M. Schneider ,  Edwin C. Weldon ,  Ananda H. Kumar ,  Kadthala R. Narendrnath

发明人： Gerhard M. Schneider ,  Edwin C. Weldon ,  Ananda H. Kumar ,  Kadthala R. Narendrnath

IPC分类号： F16J1500

CPC分类号： H01L21/67115 ,  H01L21/67103 ,  Y10S277/933

摘要： A thermally conductive medium includes a body with a first melting point and phase-changing material encapsulating a portion of the body, with the phase-changing material having a second melting point. The first melting point is greater than the second melting point, and the phase-changing material is configured to be in a liquid phase at temperatures above the second melting point and a solid phase at temperatures below the same. In the liquid phase, an adhesive force is present between the body and the phase-changing material due to capillary attraction, and the phase-changing material may be wettable to one of the two surfaces.

摘要翻译： 导热介质包括具有第一熔点的主体和封装该体的一部分的相变材料，相变材料具有第二熔点。 第一个熔点大于第二个熔点，并且相变材料被配置为在高于第二个熔点的温度下处于液相，在低于相同温度的温度下是固相。 在液相中，由于毛细管吸引，在本体和相变材料之间存在粘合力，并且相变材料可以被润湿到两个表面之一。

公开(公告)号：US06721162B2

公开(公告)日：2004-04-13

申请号：US10095914

申请日：2002-03-12

申请人： Edwin C. Weldon ,  Kenneth S. Collins ,  Arik Donde ,  Brian Lue ,  Dan Maydan ,  Robert J. Steger ,  Timothy Dyer ,  Ananda H. Kumar ,  Alexander M. Veytser ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Arnold Kholodenko ,  Shamouil Shamouilian ,  Dennis S. Grimard

发明人： Edwin C. Weldon ,  Kenneth S. Collins ,  Arik Donde ,  Brian Lue ,  Dan Maydan ,  Robert J. Steger ,  Timothy Dyer ,  Ananda H. Kumar ,  Alexander M. Veytser ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Arnold Kholodenko ,  Shamouil Shamouilian ,  Dennis S. Grimard

IPC分类号： H02N1300

CPC分类号： H01J37/321 ,  C23C16/4586 ,  H01J2237/2001 ,  H01L21/6831 ,  H01L21/6833 ,  Y10T279/23

摘要： An electrostatic chuck has an electrode capable of being electrically charged to electrostatically hold a substrate. A composite layer covers the electrode. The composite layer comprises (1) a first dielectric material covering a central portion of the electrode, and (2) a second dielectric material covering a peripheral portion of the electrode, the second dielectric material having a different composition than the composition of the first dielectric material. The chuck is useful in a plasma process chamber to process substrates, such as semiconductor wafers.

摘要翻译： 静电吸盘具有能够带电的电极，以静电保持基板。 复合层覆盖电极。 复合层包括（1）覆盖电极的中心部分的第一电介质材料，和（2）覆盖电极的周边部分的第二电介质材料，第二电介质材料的组成不同于第一电介质的组成 材料。 卡盘在等离子体处理室中可用于处理诸如半导体晶片的基板。

公开(公告)号：US6108189A

公开(公告)日：2000-08-22

申请号：US965690

申请日：1997-11-06

申请人： Edwin C. Weldon ,  Kenneth S. Collins ,  Arik Donde ,  Brian Lue ,  Dan Maydan ,  Robert J. Steger ,  Timothy Dyer ,  Ananda H. Kumar ,  Alexander M. Veytser ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Arnold Kholodenko ,  Shamouil Shamouilian ,  Dennis S. Grimard

发明人： Edwin C. Weldon ,  Kenneth S. Collins ,  Arik Donde ,  Brian Lue ,  Dan Maydan ,  Robert J. Steger ,  Timothy Dyer ,  Ananda H. Kumar ,  Alexander M. Veytser ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Arnold Kholodenko ,  Shamouil Shamouilian ,  Dennis S. Grimard

IPC分类号： B23Q3/15 ,  C23C16/458 ,  H01L21/683 ,  H02N13/00

CPC分类号： H01J37/321 ,  C23C16/4586 ,  H01L21/6831 ,  H01L21/6833 ,  H01J2237/2001 ,  Y10T279/23

摘要： An electrostatic chuck 100 useful for holding a substrate 55 in a high density plasma, comprises a dielectric covered electrode 110 having at least one heat transfer gas flow conduit 150 therein. An electrical isolator 200 comprising dielectric material is positioned in the gas flow conduit 150 to (i) electrically isolate the gas in the conduit from the plasma or electrode 110, and (ii) allow passage of heat transfer gas through the conduit. Preferably, the dielectric material comprises a plasma-deactivating material that has a high surface area that reduces plasma formation of gas passing through the conduit 150 in a plasma process. A semiconducting dielectric member 115 useful for rapidly charging and discharging electrostatic chucks is also described.

摘要翻译： 用于将衬底55保持在高密度等离子体中的静电卡盘100包括其中具有至少一个传热气体流动管道150的电介质覆盖电极110。 包括电介质材料的电隔离器200定位在气流导管150中以（i）将导管中的气体与等离子体或电极110电隔离，和（ii）允许传热气体通过导管。 优选地，电介质材料包括具有高表面积的等离子体钝化材料，其在等离子体工艺中减少通过导管150的气体的等离子体形成。 还描述了一种用于快速充放电静电卡盘的半导体电介质部件115。

公开(公告)号：US06414834B1

公开(公告)日：2002-07-02

申请号：US09596108

申请日：2000-06-16

申请人： Edwin C. Weldon ,  Kenneth S. Collins ,  Arik Donde ,  Brian Lue ,  Dan Maydan ,  Robert J. Steger ,  Timothy Dyer ,  Ananda H. Kumar ,  Alexander M. Veytser ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Arnold Kholodenko ,  Shamouil Shamouilian ,  Dennis S. Grimard

发明人： Edwin C. Weldon ,  Kenneth S. Collins ,  Arik Donde ,  Brian Lue ,  Dan Maydan ,  Robert J. Steger ,  Timothy Dyer ,  Ananda H. Kumar ,  Alexander M. Veytser ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Arnold Kholodenko ,  Shamouil Shamouilian ,  Dennis S. Grimard

IPC分类号： H02N1300

CPC分类号： H01J37/321 ,  C23C16/4586 ,  H01J2237/2001 ,  H01L21/6831 ,  H01L21/6833 ,  Y10T279/23

摘要： An electrostatic chuck 100 useful for holding a substrate 55 in a high density plasma, comprises an electrode 110 at least partially covered by a semiconducting dielectric 115, wherein the semiconducting dielectric 115 may have an electrical resistance of from about 5×109 &OHgr;cm to about 8×1010 &OHgr;cm.

摘要翻译： 用于将衬底55保持在高密度等离子体中的静电卡盘100包括至少部分被半导体电介质115覆盖的电极110，其中半导体电介质115可具有约5×10 9欧姆到约8×10 10欧姆·厘米的电阻。

公开(公告)号：US06440221B2

公开(公告)日：2002-08-27

申请号：US09082430

申请日：1998-05-20

申请人： Shamouil Shamouilian ,  Ananda H. Kumar ,  Kadthala R. Narendrnath ,  Eric Farahmand E Askarinam ,  Edwin C. Weldon ,  Michael Rice ,  Kenneth S. Collins

发明人： Shamouil Shamouilian ,  Ananda H. Kumar ,  Kadthala R. Narendrnath ,  Eric Farahmand E Askarinam ,  Edwin C. Weldon ,  Michael Rice ,  Kenneth S. Collins

IPC分类号： C23C1600

CPC分类号： H01J37/32458 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/32522 ,  H01L21/6831

摘要： A temperature control system 145 is used to control the temperature of a process chamber 25 during processing of a semiconductor substrate 70. The temperature control system 145 comprises a heat exchanger plate 155 for removing heat from the chamber 25, and a heat transfer member 158 for conducting heat to the heat exchanger plate 155. The heat transfer member 158 comprises a lower heat conduction surface 205 bonded to an external surface of the chamber 25, and an upper heat transmitting surface 210 thermally coupled to the heat exchanger plate 155. Preferably, the temperature control assembly comprises a heater 150 for heating the chamber 25, and a computer control system 165 for regulating the heat removed by the heat exchanger plate 155 as well as the heat supplied by the heater 150, to maintain the chamber 25 at substantially uniform temperatures.

摘要翻译： 温度控制系统145用于在半导体衬底70的加工期间控制处理室25的温度。温度控制系统145包括用于从腔室25除去热量的热交换器板155和用于 向热交换器板155传导热量。传热构件158包括结合到室25的外表面的下导热表面205和热耦合到热交换器板155的上传热表面210.优选地， 温度控制组件包括用于加热室25的加热器150和用于调节由热交换器板155移除的热量的计算机控制系统165以及由加热器150供应的热量，以将室25保持在基本均匀的温度 。

公开(公告)号：US06310755B1

公开(公告)日：2001-10-30

申请号：US09307215

申请日：1999-05-07

申请人： Arnold Kholodenko ,  Shamouil Shamouilian ,  You Wang ,  Wing L. Cheng ,  Alexander M. Veytser ,  Surinder S. Bedi ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Dennis S. Grimard ,  Ananda H. Kumar

发明人： Arnold Kholodenko ,  Shamouil Shamouilian ,  You Wang ,  Wing L. Cheng ,  Alexander M. Veytser ,  Surinder S. Bedi ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Dennis S. Grimard ,  Ananda H. Kumar

IPC分类号： H01G2300

CPC分类号： C04B35/565 ,  C04B35/185 ,  C04B35/806 ,  C04B37/006 ,  C04B37/026 ,  C04B41/009 ,  C04B41/5155 ,  C04B41/88 ,  C04B2235/402 ,  C04B2235/5248 ,  C04B2235/616 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2237/121 ,  C04B2237/343 ,  C04B2237/365 ,  C04B2237/366 ,  C04B2237/405 ,  C04B2237/60 ,  C22C29/00 ,  C22C2204/00 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  C04B38/00 ,  C04B41/4523

摘要： An electrostatic chuck 55 has an electrostatic member 100 including a dielectric 115 having a surface 120 adapted to receive the substrate 30. The dielectric 115 covers an electrode 105 that is chargeable to electrostatically hold the substrate 30. A support 190 below the electrostatic member 100 has a cavity 300 adapted to hold a gas to serve as a thermal insulator to regulate the flow of heat from the electrostatic chuck 55 to a surface 120 of the chamber 25. The cavity 300 has a cross-sectional profile that is shaped to provide a predetermined temperature profile across the substrate 30.

摘要翻译： 静电吸盘55具有静电构件100，静电构件100包括具有适于接纳衬底30的表面120的电介质115.电介质115覆盖电极105，电极105可充电以静电保持衬底30.静电构件100下方的支撑件190具有 空腔300适于保持气体以用作热绝缘体，以调节从静电卡盘55到腔室25的表面120的热量流动。空腔300具有截面轮廓，其形状设置成提供预定的 跨越衬底30的温度分布。

公开(公告)号：US06280584B1

公开(公告)日：2001-08-28

申请号：US09124317

申请日：1998-07-29

申请人： Ananda H. Kumar ,  Kadthala R. Narendrnath ,  Shamouil Shamouilian

发明人： Ananda H. Kumar ,  Kadthala R. Narendrnath ,  Shamouil Shamouilian

IPC分类号： H02N1300

CPC分类号： H02N13/00

摘要： A compliant bond structure 20 comprising wire mesh 25 strands 50 surrounded by compliant metal 40 is useful for bonding a ceramic surface 30 to a metal surface 35. The wire mesh 25 comprises interlocking strands 50 having longitudinal axes that are oriented substantially parallel to the ceramic and metal surfaces 30, 35. More preferably, the wire mesh 25 comprises strands having a coefficient of thermal expansion that is about 0.4 to about 1.6 times the average of the coefficients of thermal expansion of the metal and ceramic surfaces 30, 35.

摘要翻译： 由柔顺金属40包围的金属丝网25股线50的柔性粘合结构20可用于将陶瓷表面30粘合到金属表面35.金属丝网25包括具有基本平行于陶瓷的纵向轴线的互锁股线50，以及 金属丝网25更优选地，金属丝网25包括热膨胀系数为金属和陶瓷表面30,35的热膨胀系数的平均值的约0.4至约1.6倍的股线。

公开(公告)号：US06462928B1

公开(公告)日：2002-10-08

申请号：US09306944

申请日：1999-05-07

申请人： Shamouil Shamouilian ,  You Wang ,  Surinder S. Bedi ,  Arnold Kholodenko ,  Alexander M. Veytser ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Dennis S. Grimard ,  Wing L. Cheng ,  Ananda H. Kumar

发明人： Shamouil Shamouilian ,  You Wang ,  Surinder S. Bedi ,  Arnold Kholodenko ,  Alexander M. Veytser ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Dennis S. Grimard ,  Wing L. Cheng ,  Ananda H. Kumar

IPC分类号： H02N1300

CPC分类号： H02N13/00 ,  H01L21/6833

摘要： An electrostatic chuck 55 comprises an electrical connector 140 which is connected to the electrode 105 to conduct an electrical charge to the electrode 105. The electrical connector 140 comprises a refractory metal having a melting temperature of at least about 1500° C., such as for example, tungsten, titanium, nickel, tantalum, molybdenum, or alloys thereof. Preferably, the electrical connector 140 is bonded to the electrode 105 by a metal having a softening temperature of less than about 600° C., such as aluminum, indium, or low melting point alloys.

摘要翻译： 静电卡盘55包括电连接器140，电连接器140连接到电极105以将电荷引导到电极105.电连接器140包括具有至少约1500℃的熔化温度的难熔金属，例如用于 例如钨，钛，镍，钽，钼或其合金。 优选地，电连接器140通过软化温度小于约600℃的金属（例如铝，铟或低熔点合金）结合到电极105。

公开(公告)号：US06538872B1

公开(公告)日：2003-03-25

申请号：US09307214

申请日：2001-11-05

申请人： You Wang ,  Shamouil Shamouilian ,  Arnold Kholodenko ,  Alexander M. Veytser ,  Surinder S. Bedi ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Dennis S. Grimard ,  Wing L. Cheng ,  Ananda H. Kumar

发明人： You Wang ,  Shamouil Shamouilian ,  Arnold Kholodenko ,  Alexander M. Veytser ,  Surinder S. Bedi ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Dennis S. Grimard ,  Wing L. Cheng ,  Ananda H. Kumar

IPC分类号： H01G2300

CPC分类号： H01L21/6833 ,  H01L21/67103

摘要： An electrostatic chuck 55 for holding a substrate 30 comprises an electrostatic member 100 made from a dielectric 115 covering an electrode 105 that is chargeable to electrostatically hold the substrate 30. A base 175 that includes a heater 235 is joined to the electrostatic member 100. The base may be made from a composite material, such as a porous ceramic infiltrated with the metal, and may be joined to the electrostatic member by a bond layer.

摘要翻译： 用于保持基板30的静电卡盘55包括由覆盖电极105的电介质115制成的静电构件100，电极105可充电以静电保持基板30.包括加热器235的基座175与静电构件100接合。 基底可以由复合材料制成，例如渗透有金属的多孔陶瓷，并且可以通过接合层与静电部件接合。

公开(公告)号：US06490144B1

公开(公告)日：2002-12-03

申请号：US09450791

申请日：1999-11-29

申请人： Kadthala R. Narendrnath ,  Syed H. Askari ,  Dennis S. Grimard ,  Surinder S. Bedi ,  Ananda H. Kumar ,  Shamouil Shamouilian

发明人： Kadthala R. Narendrnath ,  Syed H. Askari ,  Dennis S. Grimard ,  Surinder S. Bedi ,  Ananda H. Kumar ,  Shamouil Shamouilian

IPC分类号： H02N1300

CPC分类号： H01L21/67098 ,  H01L21/6831 ,  H02N13/00

摘要： A chamber 30 for processing a substrate 25 comprises a support 55 comprising a dielectric 60 enveloping an electrode 70. The electrode 70 may be chargeable to electrostatically hold the substrate 25 or may be chargeable to form an energized gas in the chamber 30 to process the substrate 25. A base 130 is below the support 55, and a compliant member 300 is positioned between the support 55 and the base 130. The compliant member 300 may be adapted to alleviate thermal stresses arising from a thermal expansion mismatch between the dielectric 60 and the base 130.

摘要翻译： 用于处理衬底25的室30包括支撑件55，其包括包围电极70的电介质60.电极70可以带电以静电保持衬底25，或者可以对腔室30中的带电气体进行充电以处理衬底 基座130在支撑件55下方，并且顺应构件300定位在支撑件55和基座130之间。顺应构件300可以适于减轻由电介质60和电介质60之间的热膨胀失配引起的热应力 基地130。