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公开(公告)号：US20120092793A1
公开(公告)日：2012-04-19
申请号：US12925365
申请日：2010-10-19
CPC分类号： G11B5/82 , B82Y10/00 , G11B5/59655 , G11B5/743 , G11B5/855
摘要： An embodiment of the invention provides an apparatus that includes: a storage media including a patterned structure, the patterned structure including a first groove, a first stopper in the first groove, wherein the first stopper is configured to interrupt the flow of gas in a section within the first groove.
摘要翻译： 本发明的实施例提供了一种装置，其包括：包括图案化结构的存储介质，所述图案化结构包括第一凹槽，所述第一凹槽中的第一止动件，其中所述第一止动件构造成中断部分中的气体流动 在第一个槽内。
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2.发明授权Method of manufacturing a current-perpendicular-to-plane magnetoresistive device with oxidized free layer side regions 有权制造具有氧化自由层侧面区域的电流 - 垂直于平面的磁阻器件的方法公开(公告)号：US07043823B2
公开(公告)日：2006-05-16
申请号：US10869590
申请日：2004-06-15
申请人： Jeffrey R. Childress , Elizabeth A. Dobisz , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang , Son Van Nguyen
发明人： Jeffrey R. Childress , Elizabeth A. Dobisz , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang , Son Van Nguyen
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3116 , G11B5/313 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01L43/08 , H01L43/12 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A current-perpendicular-to the-plane (CPP) magnetoresistive device, such as a magnetic tunnel junction (MTJ), is formed by patterning a capping layer (e.g., using resist) in the shape of a central region of an underlying free ferromagnetic layer that in turn resides over additional layers of the MTJ. Side regions of the capping layer are removed by ion milling or etching down into the free ferromagnetic layer. Unmasked side regions of the ferromagnetic layer are then oxidized to render them locally non-ferromagnetic and electrically insulating.
摘要翻译： 电流垂直于平面（CPP）的磁阻器件，例如磁性隧道结（MTJ），是通过将覆盖层（例如，使用抗蚀剂）图案化成下层自由铁磁性的中心区域 层又依赖于MTJ的附加层。 通过离子铣削或蚀刻到自由铁磁层中去除覆盖层的侧面区域。 然后将铁磁性层的未掩模的侧面区域氧化，使其局部非铁磁性并电绝缘。
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3.发明授权Current-in-plane magnetoresistive sensor with longitudinal biasing layer having a nonmagnetic oxide central region and method for fabrication of the sensor 失效具有具有非磁性氧化物中心区域的纵向偏置层的电流平面内磁阻传感器和用于制造传感器的方法公开(公告)号：US06778364B2
公开(公告)日：2004-08-17
申请号：US10230903
申请日：2002-08-28
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3116 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , Y10T29/49044
摘要： A current-in-the-plane (CIP) giant magnetoresistive (GMR) spin valve sensor has its free layer magnetization stabilized by longitudinal biasing through the use of free layer end-region antiferromagnetic exchange coupling. An antiparallel coupling (APC) layer, such as Ru, is formed on the free layer and a ferromagnetic bias layer is formed on the APC layer. The bias layer is a continuous layer that extends across the entire width of the free layer. The central region of the bias layer is formed of nonmagnetic oxides of one or more of the elements making up the bias layer, with the bias layer end regions remaining ferromagnetic. The oxidized central region of the bias layer defines the central active trackwidth region of the underlying free layer. The ferromagnetic end regions of the bias layer are antiferromagnetically coupled across the APC layer to the corresponding underlying free layer end regions to provide the longitudinal biasing.
摘要翻译： 电流平面（CIP）巨磁阻（GMR）自旋阀传感器通过使用自由层末端反铁磁交换耦合的纵向偏置使其自由层磁化稳定。 在自由层上形成诸如Ru的反平行耦合（APC）层，并且在APC层上形成铁磁偏置层。 偏置层是在自由层的整个宽度上延伸的连续层。 偏置层的中心区域由构成偏置层的一个或多个元件的非磁性氧化物形成，偏置层端部区域保持铁磁性。 偏置层的氧化中心区域定义了下层自由层的中心主动轨道宽度区域。 偏置层的铁磁端区域跨越APC层反铁磁耦合到相应的下游自由层端部区域以提供纵向偏置。
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公开(公告)号：US08658271B2
公开(公告)日：2014-02-25
申请号：US13482944
申请日：2012-05-29
IPC分类号： B32B5/00
CPC分类号： B82Y10/00 , B82Y25/00 , B82Y30/00 , B82Y40/00 , G11B5/746 , G11B5/82 , Y10T428/24355 , Y10T428/24504 , Y10T428/249953
摘要： Block copolymer lithography has emerged as an alternative lithographic method to achieve large-area, high-density patterns at resolutions near or beyond the limit of conventional lithographic techniques for the formation of bit patterned media and discrete track media. In one embodiment, a structure includes a plurality of nanostructures extending upwardly from a substrate and a porous membrane extending across upper ends of the plurality of nanostructures. Other systems and methods are disclosed as well.
摘要翻译： 已经出现嵌段共聚物光刻作为替代的光刻方法，以在分辨率接近或超过用于形成位图案化介质和离散轨道介质的常规平版印刷技术的极限之下实现大面积，高密度图案。 在一个实施例中，结构包括从衬底向上延伸的多个纳米结构和延伸穿过多个纳米结构的上端的多孔膜。 还公开了其它系统和方法。
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公开(公告)号：US08482880B2
公开(公告)日：2013-07-09
申请号：US12925365
申请日：2010-10-19
IPC分类号： G11B5/82
CPC分类号： G11B5/82 , B82Y10/00 , G11B5/59655 , G11B5/743 , G11B5/855
摘要： An embodiment of the invention provides an apparatus that includes: a storage media including a patterned structure, the patterned structure including a first groove, a first stopper in the first groove, wherein the first stopper is configured to interrupt the flow of gas in a section within the first groove.
摘要翻译： 本发明的实施例提供了一种装置，其包括：包括图案化结构的存储介质，所述图案化结构包括第一凹槽，所述第一凹槽中的第一止动件，其中所述第一止动件构造成中断部分中的气体流动 在第一个槽内。
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公开(公告)号：US08206601B2
公开(公告)日：2012-06-26
申请号：US12641782
申请日：2009-12-18
IPC分类号： B44C1/22
CPC分类号： B82Y10/00 , B82Y25/00 , B82Y30/00 , B82Y40/00 , G11B5/746 , G11B5/82 , Y10T428/24355 , Y10T428/24504 , Y10T428/249953
摘要： Block copolymer lithography has emerged as an alternative lithographic method to achieve large-area, high-density patterns at resolutions near or beyond the limit of conventional lithographic techniques for the formation of bit patterned media and discrete track media. In one embodiment, a structure comprises a plurality of nanostructures extending upwardly from a substrate and a porous membrane extending across upper ends of the plurality of nanostructures. A method, according to another embodiment, comprises forming a block copolymer layer on a substrate, inducing self assembly of the block copolymer layer, selectively degrading a block polymer from the block copolymer layer, forming a porous membrane over the block copolymer layer, and removing a portion of the block copolymer layer for defining a plurality of nanostructures extending upwardly from the substrate after forming the porous membrane over the block copolymer layer. Other systems and methods are disclosed as well.
摘要翻译： 已经出现嵌段共聚物光刻作为替代的光刻方法，以在分辨率接近或超过用于形成位图案化介质和离散轨道介质的常规平版印刷技术的极限之下实现大面积，高密度图案。 在一个实施例中，结构包括从衬底向上延伸的多个纳米结构和延伸穿过多个纳米结构的上端的多孔膜。 根据另一个实施方案的方法包括在基材上形成嵌段共聚物层，诱导嵌段共聚物层的自组装，从嵌段共聚物层选择性降解嵌段聚合物，在嵌段共聚物层上形成多孔膜，并除去 所述嵌段共聚物层的一部分用于限定在所述嵌段共聚物层上形成所述多孔膜之后从所述基材向上延伸的多个纳米结构。 还公开了其它系统和方法。
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公开(公告)号：US20120237733A1
公开(公告)日：2012-09-20
申请号：US13482944
申请日：2012-05-29
IPC分类号： B32B3/12
CPC分类号： B82Y10/00 , B82Y25/00 , B82Y30/00 , B82Y40/00 , G11B5/746 , G11B5/82 , Y10T428/24355 , Y10T428/24504 , Y10T428/249953
摘要： Block copolymer lithography has emerged as an alternative lithographic method to achieve large-area, high-density patterns at resolutions near or beyond the limit of conventional lithographic techniques for the formation of bit patterned media and discrete track media. In one embodiment, a structure includes a plurality of nanostructures extending upwardly from a substrate and a porous membrane extending across upper ends of the plurality of nanostructures. Other systems and methods are disclosed as well.
摘要翻译： 已经出现嵌段共聚物光刻作为替代的光刻方法，以在分辨率接近或超过用于形成位图案化介质和离散轨道介质的常规平版印刷技术的极限之下实现大面积，高密度图案。 在一个实施例中，结构包括从衬底向上延伸的多个纳米结构和延伸穿过多个纳米结构的上端的多孔膜。 还公开了其它系统和方法。
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8.发明申请SYSTEM, METHOD AND APPARATUS FOR SHAPE-ENGINEERED ISLANDS OF EXCHANGE SPRING OR EXCHANGE COUPLED COMPOSITE, BIT PATTERNED MEDIA 审中-公开交换弹簧或交换耦合复合材料形状工程区域的系统，方法和装置，位图形式公开(公告)号：US20120075747A1
公开(公告)日：2012-03-29
申请号：US12891961
申请日：2010-09-28
摘要： A hard disk drive has a magnetic media disk comprising a substrate having an axis, and an exchange coupled, bit patterned media on the substrate arranged in a plurality of tracks. Each of the tracks has a pattern of islands extending in an axial direction from the disk. Each island comprises a first layer having a first anisotropy and a first layer radial width, and a second layer on the first layer and having a second anisotropy that is lower than the first anisotropy. The second layer radial width is less than the first layer radial width.
摘要翻译： 硬盘驱动器具有包括具有轴的衬底的磁性介质盘，以及布置在多个轨道中的衬底上的交换耦合的位图案化介质。 每个轨道具有从盘向轴向方向延伸的岛状图案。 每个岛包括具有第一各向异性和第一层径向宽度的第一层和在第一层上的第二层，并且具有低于第一各向异性的第二各向异性。 第二层径向宽度小于第一层径向宽度。
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公开(公告)号：US20110151236A1
公开(公告)日：2011-06-23
申请号：US12641782
申请日：2009-12-18
CPC分类号： B82Y10/00 , B82Y25/00 , B82Y30/00 , B82Y40/00 , G11B5/746 , G11B5/82 , Y10T428/24355 , Y10T428/24504 , Y10T428/249953
摘要： Block copolymer lithography has emerged as an alternative lithographic method to achieve large-area, high-density patterns at resolutions near or beyond the limit of conventional lithographic techniques for the formation of bit patterned media and discrete track media. In one embodiment, a structure comprises a plurality of nanostructures extending upwardly from a substrate and a porous membrane extending across upper ends of the plurality of nanostructures. A method, according to another embodiment, comprises forming a block copolymer layer on a substrate, inducing self assembly of the block copolymer layer, selectively degrading a block polymer from the block copolymer layer, forming a porous membrane over the block copolymer layer, and removing a portion of the block copolymer layer for defining a plurality of nanostructures extending upwardly from the substrate after forming the porous membrane over the block copolymer layer. Other systems and methods are disclosed as well.
摘要翻译： 已经出现嵌段共聚物光刻作为替代的光刻方法，以在分辨率接近或超过用于形成位图案化介质和离散轨道介质的常规平版印刷技术的极限之下实现大面积，高密度图案。 在一个实施例中，结构包括从衬底向上延伸的多个纳米结构和延伸穿过多个纳米结构的上端的多孔膜。 根据另一个实施方案的方法包括在基材上形成嵌段共聚物层，诱导嵌段共聚物层的自组装，从嵌段共聚物层选择性降解嵌段聚合物，在嵌段共聚物层上形成多孔膜，并除去 所述嵌段共聚物层的一部分用于限定在所述嵌段共聚物层上形成所述多孔膜之后从所述基材向上延伸的多个纳米结构。 还公开了其它系统和方法。
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公开(公告)号：US06972935B2
公开(公告)日：2005-12-06
申请号：US10917982
申请日：2004-08-13
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3116 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , Y10T29/49044
摘要： A current-in-the-plane (CIP) giant magnetoresistive (GMR) spin valve sensor has its free layer magnetization stabilized by longitudinal biasing through the use of free layer end-region antiferromagnetic exchange coupling. An antiparallel coupling (APC) layer, such as Ru, is formed on the free layer and a ferromagnetic bias layer is formed on the APC layer. The bias layer is a continuous layer that extends across the entire width of the free layer. The central region of the bias layer is formed of nonmagnetic oxides of one or more of the elements making up the bias layer, with the bias layer end regions remaining ferromagnetic. The oxidized central region of the bias layer defines the central active track-width region of the underlying free layer. The ferromagnetic end regions of the bias layer are antiferromagnetically coupled across the APC layer to the corresponding underlying free layer end regions to provide the longitudinal biasing.
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