Methods for conducting electron beam lithography
    7.
    发明授权
    Methods for conducting electron beam lithography 失效
    电子束光刻的方法

    公开(公告)号:US4454200A

    公开(公告)日:1984-06-12

    申请号:US471577

    申请日:1983-03-03

    IPC分类号: G03F7/40 B32B9/04 G03C5/00

    CPC分类号: G03F7/40 Y10T428/31504

    摘要: Plasma etch durability of polymeric resists used in electron beam lithography is improved by vapor phase impregnation with an aromatic compound after development of an image. The aromatic compound should possess a polarity similar to the polymeric resist and should be relatively volatile to facilitate vapor phase diffusion.

    摘要翻译: 用于电子束光刻的聚合物抗蚀剂的等离子体蚀刻耐久性通过在显影图像之后用芳族化合物进行气相浸渍来改善。 芳族化合物应具有与聚合物抗蚀剂相似的极性,并应相对挥发以促进气相扩散。