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162 条记录 (耗时 0.018 秒)

    High purity 2-naphthylacetonitrile and method for producing same
    1.
    发明授权
    High purity 2-naphthylacetonitrile and method for producing same 有权

    公开(公告)号：US12084404B2

    公开(公告)日：2024-09-10

    申请号：US17824393

    申请日：2022-05-25

    申请人： API CORPORATION

    发明人： Masaki Nagahama ,  Daiki Okado ,  Hirotsugu Taniike

    IPC分类号： C07C255/33 ,  C07C253/22

    CPC分类号： C07C253/22 ,  C07C255/33

    摘要： The present invention provides high purity 2-naphthylacetonitrile with fewer impurities that is useful as a starting material or intermediate for the synthesis of various pharmaceutical products, agricultural chemicals, and chemical products, and a production method thereof. A high purity 2-naphthylacetonitrile having an HPLC purity of 2-naphthylacetonitrile of not less than 95 area %, and containing naphthalene compounds represented by the formulas (a)-(j) at a content of a predetermined area % or below. A method for producing high purity 2-naphthylacetonitrile, including the following step 1 and step 2: step 1: a step of subjecting 2′-acetonaphthone to a Willgerodt reaction in the presence of an additive where necessary, and hydrolyzing the obtained amide compound to give 2-naphthylacetic acid; step 2: a step of reacting the 2-naphthylacetic acid obtained in step 1, a halogenating agent and sulfamide in the presence of a catalyst as necessary in an organic solvent to give 2-naphthylacetonitrile.

    Phthalonitrile compound
    3.
    发明授权
    Phthalonitrile compound 有权

    公开(公告)号：US10683261B2

    公开(公告)日：2020-06-16

    申请号：US15576009

    申请日：2016-09-26

    申请人： LG CHEM, LTD.

    发明人： Sang Woo Kim ,  Seung Hee Lee ,  Ki Ho Ahn

    IPC分类号： C07C255/54 ,  C07C255/51 ,  C07C255/33 ,  C07C323/20 ,  C09B57/00 ,  C09B47/06 ,  C08G73/06 ,  C08K3/013 ,  C07C317/36 ,  C07C321/30 ,  C07D307/89 ,  C08G73/10 ,  C08K5/00 ,  C09K11/06

    摘要： The present application can provide a phthalonitrile compound and a use thereof. The present application can provide a phthalonitrile compound capable of forming a phthalonitrile resin by self-curing or of serving as a curing agent after being mixed with another phthalonitrile compound, and a use of the phthalonitrile compound. The phthalonitrile compound can form a phthalonitrile resin by rapid self-curing even at a low temperature and does not create any defects resulting from the use of a conventional curing agent. Also, the phthalonitrile compound can be applied as a curing agent after being mixed with another compound, in which case, even if the content of the compound applied as a curing agent increases, the total content of the phthalonitrile resin obtained does not decrease, and thus a resin exhibiting an excellent degree of cure can be provided.

    Sulfur-containing amino acid derivatives
    7.
    发明授权
    Sulfur-containing amino acid derivatives 失效
    含硫氨基酸衍生物

    公开(公告)号：US6046235A

    公开(公告)日：2000-04-04

    申请号：US254160

    申请日：1999-03-01

    申请人： Masato Horiuchi ,  Kenichi Fujimura ,  Hiroshi Suhara

    发明人： Masato Horiuchi ,  Kenichi Fujimura ,  Hiroshi Suhara

    IPC分类号： C07C323/60 ,  C07C323/65 ,  C07C329/06 ,  A61K31/275 ,  C07C229/06 ,  C07C255/33 ,  C07C309/73

    CPC分类号： C07C323/65 ,  C07C323/60 ,  C07C329/06 ,  C07C2101/14

    摘要： A sulfur-containing amino acid compound having a high inhibitory activity on LTA.sub.4 hydrolase which is represented by the following formula: ##STR1## wherein R.sup.1 represents H, alkyl, optionally substituted phenyl alkyl, alkanoyl or optionally substituted benzoyl; R.sup.2 represents ester, amide or carboxyl; R.sup.3 represents hydroxyl, alkyl, halogenoalkyl, alkoxy, halogenoalkoxy, alkylthio, optionally substituted phenyl, optionally substituted phenoxy, optionally substituted phenylthio, halogen atom, alkylsulfonyl, halogenoalkylsulfonyl, nitro or cyano; R.sup.4 represents alkyl; A.sup.1 represents alkylene; and A.sup.2 represents alkylene.

    摘要翻译： PCT No.PCT / JP97 / 03124 Sec。 371日期1999年3月1日 102（e）1999年3月1日PCT 1997年9月5日PCT公布。 公开号WO98 / 09943 日期1998年5月12日一种对LTA4水解酶具有高抑制活性的含硫氨基酸化合物，其由下式表示：其中R1表示H，烷基，任选取代的苯基烷基，烷酰基或任选取代的苯甲酰基; R2代表酯，酰胺或羧基; R 3表示羟基，烷基，卤代烷基，烷氧基，卤代烷氧基，烷硫基，任选取代的苯基，任选取代的苯氧基，任选取代的苯硫基，卤素原子，烷基磺酰基，卤代烷基磺酰基，硝基或氰基; R4代表烷基; A1表示亚烷基; A2表示亚烷基。