公开(公告)号：US08598660B2

公开(公告)日：2013-12-03

申请号：US13150612

申请日：2011-06-01

申请人： Renata Camillo-Castillo ,  Erik Mattias Dahlstrom ,  Robert J. Gauthier, Jr. ,  Ephrem G. Gebreselasie ,  Richard A. Phelps ,  Jed Hickory Rankin ,  Yun Shi

发明人： Renata Camillo-Castillo ,  Erik Mattias Dahlstrom ,  Robert J. Gauthier, Jr. ,  Ephrem G. Gebreselasie ,  Richard A. Phelps ,  Jed Hickory Rankin ,  Yun Shi

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/66492 ,  H01L29/0653 ,  H01L29/1045 ,  H01L29/66659 ,  H01L29/66689 ,  H01L29/7816 ,  H01L29/7835 ,  H01L29/7843

摘要： A lateral diffused metal-oxide-semiconductor field effect transistor (LDMOS transistor) employs a stress layer that enhances carrier mobility (i.e., on-current) while also maintaining a high breakdown voltage for the device. High breakdown voltage is maintained, because an increase in doping concentration of the drift region is minimized. A well region and a drift region are formed in the substrate adjacent to one another. A first shallow trench isolation (STI) region is formed on and adjacent to the well region, and a second STI region is formed on and adjacent to the drift region. A stress layer is deposited over the LDMOS transistor and in the second STI region, which propagates compressive or tensile stress into the drift region, depending on the polarity of the stress layer. A portion of the stress layer can be removed over the gate to change the polarity of stress in the inversion region below the gate.

公开(公告)号：US20120306014A1

公开(公告)日：2012-12-06

申请号：US13150612

申请日：2011-06-01

申请人： Renata Camillo-Castillo ,  Erik Mattias Dahlstrom ,  Robert J. Gauthier, JR. ,  Ephrem G. Gebreselasie ,  Richard A. Phelps ,  Jed Hickory Rankin ,  Yun Shi

发明人： Renata Camillo-Castillo ,  Erik Mattias Dahlstrom ,  Robert J. Gauthier, JR. ,  Ephrem G. Gebreselasie ,  Richard A. Phelps ,  Jed Hickory Rankin ,  Yun Shi

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/66492 ,  H01L29/0653 ,  H01L29/1045 ,  H01L29/66659 ,  H01L29/66689 ,  H01L29/7816 ,  H01L29/7835 ,  H01L29/7843

摘要： A lateral diffused metal-oxide-semiconductor field effect transistor (LDMOS transistor) employs a stress layer that enhances carrier mobility (i.e., on-current) while also maintaining a high breakdown voltage for the device. High breakdown voltage is maintained, because an increase in doping concentration of the drift region is minimized. A well region and a drift region are formed in the substrate adjacent to one another. A first shallow trench isolation (STI) region is formed on and adjacent to the well region, and a second STI region is formed on and adjacent to the drift region. A stress layer is deposited over the LDMOS transistor and in the second STI region, which propagates compressive or tensile stress into the drift region, depending on the polarity of the stress layer. A portion of the stress layer can be removed over the gate to change the polarity of stress in the inversion region below the gate.

摘要翻译： 横向扩散金属氧化物半导体场效应晶体管（LDMOS晶体管）采用增强载流子迁移率（即导通电流）的应力层，同时还保持器件的高击穿电压。 由于漂移区域的掺杂浓度的增加被最小化，因此保持高的击穿电压。 在相邻的衬底中形成阱区和漂移区。 第一浅沟槽隔离（STI）区域形成在阱区域上并与阱区域相邻，并且第二STI区域形成在漂移区域上并与漂移区域相邻。 应力层沉积在LDMOS晶体管和第二STI区域中，第二STI区域根据应力层的极性将压缩或拉伸应力传播到漂移区域。 应力层的一部分可以在栅极上去除以改变栅极下方的反转区域中的应力极性。