Abstract:
A semiconductor substrate and a semiconductor device are provided. The semiconductor substrate includes a base substrate, a first silicon germanium layer on the base substrate and a second silicon germanium layer on the first silicon germanium layer. A germanium fraction of the second silicon germanium layer decreases in the direction away from the base substrate, and a germanium fraction of a lowermost part of the second silicon germanium layer is greater than a germanium fraction of an uppermost part of the first silicon germanium layer.
Abstract:
There is provided a multilayer ceramic capacitor capable of controlling equivalent series resistance (ESR) characteristics. The multilayer ceramic capacitor includes: a ceramic laminate including dielectric layers and a plurality of internal electrodes having different polarities and alternately stacked between the dielectric layers; and external electrodes formed on both sides of the ceramic laminate, wherein each of the internal electrodes includes a main electrode and a lead for connecting the main electrode to the external electrode, and an equivalent series resistance (ESR) value is determined by adjusting a ratio of a width to a length of the lead, whereby the ESR characteristics of the multilayer ceramic capacitor may be controlled.
Abstract:
There is provided a multilayer ceramic capacitor capable of controlling equivalent series resistance (ESR) characteristics. The multilayer ceramic capacitor includes: a ceramic laminate including dielectric layers and a plurality of internal electrodes having different polarities and alternately stacked between the dielectric layers; and external electrodes formed on both sides of the ceramic laminate, wherein each of the internal electrodes includes a main electrode and a lead for connecting the main electrode to the external electrode, and an equivalent series resistance (ESR) value is determined by adjusting a ratio of a width to a length of the lead, whereby the ESR characteristics of the multilayer ceramic capacitor may be controlled.
Abstract:
There is provided a multilayer ceramic capacitor including: a ceramic body including dielectric layers and internal electrodes stacked between the dielectric layers; and a pair of external electrodes each fixed to first and second surfaces of the ceramic body, facing each other, and connected to the internal electrodes, wherein the ceramic body has a third surface facing a printed circuit board and each of the pair of external electrodes includes mounting parts extended onto the third surface and having a preset length by which they are mounted on the printed circuit board and wherein connection parts between the pair of external electrodes and the mounting parts have a convexly curved shape having a size equal to or smaller than a preset corner radius.
Abstract:
A semiconductor substrate and a semiconductor device are provided. The semiconductor substrate includes a base substrate, a first silicon germanium layer on the base substrate and a second silicon germanium layer on the first silicon germanium layer. A germanium fraction of the second silicon germanium layer decreases in the direction away from the base substrate, and a germanium fraction of a lowermost part of the second silicon germanium layer is greater than a germanium fraction of an uppermost part of the first silicon germanium layer.
Abstract:
There is provided a multilayer ceramic capacitor including: a ceramic body including dielectric layers and internal electrodes stacked between the dielectric layers; and a pair of external electrodes each fixed to first and second surfaces of the ceramic body, facing each other, and connected to the internal electrodes, wherein the ceramic body has a third surface facing a printed circuit board and each of the pair of external electrodes includes mounting parts extended onto the third surface and having a preset length by which they are mounted on the printed circuit board and wherein connection parts between the pair of external electrodes and the mounting parts have a convexly curved shape having a size equal to or smaller than a preset corner radius.