公开(公告)号：US20150236169A1

公开(公告)日：2015-08-20

申请号：US14704300

申请日：2015-05-05

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE ,  FACULTY OF SCIENCE AND TECHNOLOGY NEW UNIVERSITY OF LISBON

Inventor： Sang Hee PARK ,  Chi Sun HWANG ,  Chun Won BYUN ,  Elvira M.C. FORTUNATO ,  Rodrigo F.P. MARTINS ,  Ana R.X. BARROS ,  Nuno F.O. CORREIA ,  Pedro M.C. BARQUINHA ,  Vitor M.L. FIGUEIREDO

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L29/78693 ,  C23C14/08 ,  C23C14/086 ,  C23C14/087 ,  H01L21/02422 ,  H01L21/02565 ,  H01L21/02579 ,  H01L21/02617 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/823857 ,  H01L27/092 ,  H01L27/1203 ,  H01L29/04 ,  H01L29/24 ,  H01L29/242 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/94

Abstract: Provided is a semiconductor device using a p-type oxide semiconductor layer and a method of manufacturing the same. The device includes the p-type oxide layer formed of at least one oxide selected from the group consisting of a copper(Cu)-containing copper monoxide, a tin(Sn)-containing tin monoxide, a copper tin oxide containing a Cu—Sn alloy, and a nickel tin oxide containing a Ni—Sn alloy. Thus, transparent or opaque devices are easily developed using the p-type oxide layer. Since an oxide layer that is formed using a low-temperature process is applied to a semiconductor device, the manufacturing process of the semiconductor device is simplified and manufacturing costs may be reduced.

Abstract translation: 提供一种使用p型氧化物半导体层的半导体器件及其制造方法。 该装置包括由至少一种氧化物形成的p型氧化物层，所述氧化物选自由含铜（Cu）的一氧化碳，含锡（Sn）的一氧化锡，含有Cu-Sn的铜锡氧化物 合金和含有Ni-Sn合金的镍锡氧化物。 因此，使用p型氧化物层容易显影透明或不透明的装置。 由于使用低温工艺形成的氧化物层被应用于半导体器件，所以可以简化半导体器件的制造工艺，并且可以降低制造成本。