Vertically stacked multichip modules

    公开(公告)号:US10483237B2

    公开(公告)日:2019-11-19

    申请号:US15793018

    申请日:2017-10-25

    摘要: In a general aspect, a circuit assembly apparatus can include first and second semiconductor die, and a substrate. The substrate can include an insulating layer; a first metal layer disposed on a first side of the insulating layer, a first side of the first semiconductor die disposed on and electrically coupled with the first metal layer; a second metal layer disposed on a second side of the insulating layer, the second side of the insulating layer being opposite the first side of the insulating layer, a first side of the second semiconductor die being disposed on and electrically coupled with the second metal layer; and a conductive via disposed through the insulating layer, the conductive via electrically coupling the first metal layer with the second metal layer, the first metal layer, the conductive via and the second metal layer electrically coupling the first semiconductor die with the second semiconductor die.

    Non zero-voltage switching (ZVS) detection in resonant converters

    公开(公告)号:US10374516B2

    公开(公告)日:2019-08-06

    申请号:US15668974

    申请日:2017-08-04

    摘要: According to an implementation, a resonant converter for detecting non-zero voltage switching includes an oscillator configured to generate a first clock signal to drive a first power switch, and a second clock signal to drive a second power switch. The resonant converter includes a non-zero voltage switching (non-ZVS) detection circuit configured to receive an integrated current sense signal sensed on a primary side of a transformer of a resonant network, and determine a polarity of a voltage of the integrated current sense signal at a predetermined point in the first clock signal or the second clock signal during a switching cycle. The non-ZVS detection circuit is configured to detect a non-ZVS event based on the polarity of the voltage of the integrated current sense signal at the predetermined point in the first clock signal or the second clock signal during the switching cycle.

    LED driver circuit and LED driving method

    公开(公告)号:US10362643B2

    公开(公告)日:2019-07-23

    申请号:US15626307

    申请日:2017-06-19

    IPC分类号: H05B33/08

    摘要: A light emitting diode (LED) driver circuit includes an LED string and a conducting state detection circuit. The conducting state detection circuit detects a conducting state of the LED string, and generates a discharge control signal upon sensing that the LED string is in a non-conducting state. A current source generates a discharge current according to the discharge control signal when the LED string is in the non-conducting state. A passive bleeder provides current compensation by internal regulator operation. An LED spike current suppression circuit suppresses spike current that can occur when the input voltage increases above a threshold. A bias supply circuit has an input capacitor that provides a bias voltage.

    VERTICALLY STACKED MULTICHIP MODULES
    6.
    发明申请

    公开(公告)号:US20180138152A1

    公开(公告)日:2018-05-17

    申请号:US15793018

    申请日:2017-10-25

    摘要: In a general aspect, a circuit assembly apparatus can include first and second semiconductor die, and a substrate. The substrate can include an insulating layer; a first metal layer disposed on a first side of the insulating layer, a first side of the first semiconductor die disposed on and electrically coupled with the first metal layer; a second metal layer disposed on a second side of the insulating layer, the second side of the insulating layer being opposite the first side of the insulating layer, a first side of the second semiconductor die being disposed on and electrically coupled with the second metal layer; and a conductive via disposed through the insulating layer, the conductive via electrically coupling the first metal layer with the second metal layer, the first metal layer, the conductive via and the second metal layer electrically coupling the first semiconductor die with the second semiconductor die.