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公开(公告)号：US06983086B2
公开(公告)日：2006-01-03
申请号：US10465210
申请日：2003-06-19
IPC分类号： G02B6/12
CPC分类号： G02F1/025 , G02F1/0147
摘要： A thermo-optic device may be formed with trenches that undercut the substrate beneath the thermo-optic device. Through the removal of the underlying substrate, the heat dissipation of the thermo-optic device may be reduced. This may reduce the thermal budget of the device, reducing the power requirements for operating the device in some embodiments.
摘要翻译： 热光器件可以形成有在热光器件下面切割衬底的沟槽。 通过去除下面的衬底，可以减少热光器件的散热。 这可能降低装置的热量预算，在一些实施例中减少了操作装置的功率要求。
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2.发明授权Design structures of and simplified methods for forming field emission microtip electron emitters 失效用于形成场发射微带电子发射体的设计结构和简化方法公开(公告)号：US06771011B2
公开(公告)日：2004-08-03
申请号：US10383966
申请日：2003-03-07
IPC分类号： H01J1304
CPC分类号： H01J9/025
摘要： Electron emission structures formed using standard semiconductor processes on a substrate first prepared with a topographical feature are disclosed. At least one layer of a first material is concurrently deposited on the substrate and etched from the substrate to form an atomically sharp feature. An at least one layer of a second material is deposited over the atomically sharp feature. A conductive layer is deposited over the at least one layer of the second material. A selected area of material is removed from the conductive layer and the at least one layer of second material to expose the atomically sharp feature. Finally, electrical connectivity is provided to elements of the electron emission structure.
摘要翻译： 公开了首先使用形貌特征制备的基板上使用标准半导体工艺形成的电子发射结构。 至少一层第一材料同时沉积在衬底上并从衬底上蚀刻以形成原子锋利的特征。 在原子锋利特征上沉积至少一层第二材料。 导电层沉积在第二材料的至少一层上。 从导电层和至少一层第二材料中去除选择的材料区域以暴露原子锋利的特征。 最后，电连接被提供给电子发射结构的元件。
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公开(公告)号：US06572425B2
公开(公告)日：2003-06-03
申请号：US09820338
申请日：2001-03-28
IPC分类号： H01J902
CPC分类号： H01J9/025
摘要： Electron emission structures formed using standard semiconductor processes on a substrate first prepared with a topographical feature are disclosed. At least one layer of a first material is concurrently deposited on the substrate and etched from the substrate to form an atomically sharp feature. An at least one layer of a second material is deposited over the atomically sharp feature. A conductive layer is deposited over the at least one layer of the second material. A selected area of material is removed from the conductive layer and the at least one layer of second material to expose the atomically sharp feature. Finally, electrical connectivity is provided to elements of the electron emission structure.
摘要翻译： 公开了首先使用形貌特征制备的基板上使用标准半导体工艺形成的电子发射结构。 至少一层第一材料同时沉积在衬底上并从衬底上蚀刻以形成原子锋利的特征。 在原子锋利特征上沉积至少一层第二材料。 导电层沉积在第二材料的至少一层上。 从导电层和至少一层第二材料中去除选择的材料区域以暴露原子锋利的特征。 最后，电连接被提供给电子发射结构的元件。
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公开(公告)号：US20060029325A1
公开(公告)日：2006-02-09
申请号：US11245915
申请日：2005-10-07
IPC分类号： G02B6/12
CPC分类号： G02F1/025 , G02F1/0147
摘要： A thermo-optic device may be formed with trenches that undercut the substrate beneath the thermo-optic device. Through the removal of the underlying substrate, the heat dissipation of the thermo-optic device may be reduced. This may reduce the thermal budget of the device, reducing the power requirements for operating the device in some embodiments.
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