摘要:
A first object, which comprises organic material, is bonded to a second object by a method whereby both objects are provided with complementary optically smooth surfaces, subsequent to which these surfaces are brought into substantial contact with one another, consequent upon which spontaneous atomic bonds are formed between atoms of the two objects. The strength of the atomic bonds thus formed can be increased by subsequently heating the region of contact of the two surfaces.
摘要:
An optical device is manufactured by providing a disc-shaped body of a light-conducting material on a plane surface of a disc-shaped carrier body, grinding the light-conducting material mechanically to a thickness which exceeds the desired ultimate layer thickness by at least 50 .mu.m, subjecting the light-conducting material to alternate tribochemical and mechanical polishing treatments until a thickness is obtained which exceeds the desired ultimate layer thickness by approximately 10 .mu.m, and subsequently polishing the light-conductor body tribochemically until the desired layer thickness is obtained.
摘要:
Methods and device for manufacturing a plate with a plane main surface or with parallel main surfaces, whereby material is taken off from the edges of the plate and from the central portion of the plate alternately by means of polishing in order to obtain main surfaces having a convex, plane, or concave shape. Polishing is stopped after at least one transition from convex to concave or vice versa at the moment at which the main surface has a substantially plane shape or has substantially parallel main surfaces.
摘要:
A method of manufacturing a semiconductor body (1), whereby a carrier wafer (2) with an optically smooth main surface (3) is provided with a semiconducting top layer (4) in that the main surface (3) is brought into contact with an optically smooth main surface (5) of a monocrystalline semiconductor wafer (6), a permanent bond being formed, after which the semiconductor wafer (6) is made thin by means of a grinding process and a polishing process in that order. The semiconductor wafer (6) is made thin in the polishing process in that the exposed main surface (9) of the carrier wafer (2) is made wear-resistant, and in that then the carrier wafer (2) bonded to the semiconductor wafer (6) is arranged between two plane polishing discs (10) and (11) provided with a polishing liquid, upon which these polishing discs (10, 11) and the exposed main surfaces (8, 9) are moved relative to one another. It is achieved by this that a semiconductor body (1) with a carrier wafer (2) and a top layer (4) can be manufactured in a simple manner suitable for mass production. It is also found that a top layer (4) with smaller layer thickness variations can be manufactured.