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    Method of manufacturing a silicon on insulator semiconductor
    5.
    发明授权
    Method of manufacturing a silicon on insulator semiconductor 失效
    硅绝缘子半导体制造方法

    公开(公告)号：US5028558A

    公开(公告)日：1991-07-02

    申请号：US336170

    申请日：1989-04-11

    申请人： Jan Haisma ,  Cornelis L. Adema ,  Johan G. De Bruin ,  Theodorus M. Michielsen ,  Gijsbertus A. C. M. Spierings

    发明人： Jan Haisma ,  Cornelis L. Adema ,  Johan G. De Bruin ,  Theodorus M. Michielsen ,  Gijsbertus A. C. M. Spierings

    IPC分类号： H01L21/306 ,  H01L21/02 ,  H01L21/18 ,  H01L21/20 ,  H01L21/304 ,  H01L27/12

    CPC分类号： H01L21/187 ,  H01L21/2007 ,  H01L21/304 ,  Y10S148/012

    摘要： A method of manufacturing a silicon-on-insulator semiconductor body is characterized by the steps consisting in that a carrier body is temporarily connected to a supporting body with accurately flat and parallel major surfaces and having a thickness of at least 1/8 of the largest dimension of the carrier body, in that the free major surface of the carrier body is mechanically polished to a precision of at least 1/2 .mu.m flatness, in that the carrier body is detached from the supporting body and the polished major surface is temporarily connected to the supporting body and the other major surface of the carrier body is mechanically polished to a precision of at least 1/2 .mu.m flatness and a parallelism between the major surfaces of at least 1/2 .mu.m whereupon a semiconductor body is connected through a major surface permanently to a major surface of the carrier body, in that then the semiconductor body is mechanically ground to a thickness of at least 50 .mu.m larger than the desired ultimate layer thickness and is then alternately polished tribochemically and mechanically to a thickness of about 10 .mu.m larger than the ultimately desired layer thickness, and in that there is ultimately polished tribochemically until the desired layer thickness of the semiconductor body is attained.