公开(公告)号：US20050186701A1

公开(公告)日：2005-08-25

申请号：US10873750

申请日：2004-06-21

Applicant: Benoit Froment ,  Francois Wacquant

Inventor： Benoit Froment ,  Francois Wacquant

IPC: H01L21/285 ,  H01L21/44

CPC classification number: H01L21/28518

Abstract: A semiconductor material is protected against the formation of a metal silicide by forming a layer of a silicon/germanium alloy on the material. The material which is protected belongs to a component of an integrated circuit comprising other components that have to be subjected to a siliciding operation. The method of protection includes depositing a layer of silicon/germanium alloy on the integrated circuit. The layer of silicon/germanium alloy is then removed from the areas to be silicided. A metal is then deposited on the structure and a metal silicide is formed therefrom. The unreacted metal and the metal/ silicon/germanium ternary alloy that may have formed are removed, and the layer of silicon/germanium alloy is removed so as to expose the unsilicided component.

Abstract translation: 通过在材料上形成硅/锗合金层来保护半导体材料免受金属硅化物的形成。 被保护的材料属于集成电路的部件，该集成电路包括必须进行硅化操作的其它部件。 保护方法包括在集成电路上沉积一层硅/锗合金。 然后将硅/锗合金层从要被硅化的区域中取出。 然后在结构上沉积金属，由此形成金属硅化物。 去除可能形成的未反应的金属和金属/硅/锗三元合金，并除去硅/锗合金层，以暴露未被硅化的组分。

公开(公告)号：US20050208765A1

公开(公告)日：2005-09-22

申请号：US10871542

申请日：2004-06-18

Applicant: Francois Wacquant ,  Christophe Regnier ,  Benoit Froment ,  Damien Lenoble ,  Rebha El Farhane

Inventor： Francois Wacquant ,  Christophe Regnier ,  Benoit Froment ,  Damien Lenoble ,  Rebha El Farhane

IPC: H01L21/265 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L29/94 ,  H01L21/4763 ,  H01L31/119

CPC classification number: H01L21/26506 ,  H01L21/28061 ,  H01L21/28518 ,  H01L29/665

Abstract: A process for forming a silicide on top of at least one silicon portion on the surface of a semiconductor wafer, comprising the following steps: a) implanting, at a defined depth in the silicon portion, through a dielectric layer, of ions that have the property of limiting the silicidation of metals; b) performing heat treatment; c) depositing a metal layer, the metal being capable of forming a silicide by thermal reaction with the silicon; d) performing rapid thermal processing suitable for siliciding the metal deposited at step c); and e) removing the metal that has not reacted to the thermal processing of step d). Advantageously, the thickness of the silicide layer created at step d) is controlled by a suitable choice of the depth of the implantation carried out in step a).

Abstract translation: 一种用于在半导体晶片的表面上的至少一个硅部分的顶部上形成硅化物的工艺，其包括以下步骤：a）在硅部分的限定深度处，通过电介质层注入离子，所述离子具有 限制金属硅化物的性质; b）进行热处理; c）沉积金属层，所述金属能够通过与硅的热反应形成硅化物; d）执行适于硅化沉积在步骤c）的金属的快速热处理; 以及e）除去未与步骤d）的热处理反应的金属。 有利地，通过在步骤a）中进行的注入深度的合适选择来控制在步骤d）产生的硅化物层的厚度。

公开(公告)号：US20050064638A1

公开(公告)日：2005-03-24

申请号：US10871356

申请日：2004-06-18

Applicant: Christophe Regnier ,  Francois Wacquant

Inventor： Christophe Regnier ,  Francois Wacquant

IPC: H01L21/285 ,  H01L21/336 ,  H01L21/44 ,  H01L21/8234

CPC classification number: H01L21/28518

Abstract: A method for the selective formation of a suicide on a slice of semiconductor material that comprises exposed regions to be silicided and exposed regions not to be silicided, comprising the following steps: a) forming a resist thin mask on top of the regions not to be silicided; b) implanting ions wafer-scale through said mask so as to form beneath the resist layer an implantation residue layers using the resist layer; c) removing the resist layer; d) depositing conformally a metal layer on the wafer; e) performing rapid heat treatment so as to form a silicide by siliciding the metal deposited at step d); and f) removing the metal that has not reacted to the heat treatment of step e).

Abstract translation: 一种用于在半导体材料切片上选择性形成硅化物的方法，其包括未被硅化的暴露区域和不被硅化的暴露区域，包括以下步骤：a）在不要被覆的区域的顶部上形成抗蚀剂薄掩模 硅化 b）通过所述掩模注入离子晶片，以在抗蚀剂层下面形成使用抗蚀剂层的注入残余层; c）除去抗蚀剂层; d）在所述晶片上共形地沉积金属层; e）进行快速热处理，以便通过硅化硅化物在步骤d）沉积的金属形成硅化物; 和f）除去未与步骤e）的热处理反应的金属。