公开(公告)号：US20120273880A1

公开(公告)日：2012-11-01

申请号：US12912612

申请日：2010-10-26

申请人： Chih Sieh Teng ,  Constantin Bulucea ,  Chin-Miin Shyu ,  Fu-Cheng Wang ,  Prasad Chaparala

发明人： Chih Sieh Teng ,  Constantin Bulucea ,  Chin-Miin Shyu ,  Fu-Cheng Wang ,  Prasad Chaparala

IPC分类号： H01L27/088 ,  H01L21/336 ,  H01L21/8234 ,  H01L29/78

CPC分类号： H01L29/1083 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/105

摘要： An IGFET (40 or 42) has a channel zone (64 or 84) situated in body material (50). Short-channel threshold voltage roll-off and punchthrough are alleviated by arranging for the net dopant concentration in the channel zone to longitudinally reach a local surface minimum at a location between the IGFET's source/drain zones (60 and 62 or 80 and 82) and by arranging for the net dopant concentration in the body material to reach a local subsurface maximum more than 0.1 μm deep into the body material but not more than 0.1 μm deep into the body material. The source/drain zones (140 and 142 or 160 and 162) of a p-channel IGFET (120 or 122) are provided with graded-junction characteristics to reduce junction capacitance, thereby increasing switching speed.

公开(公告)号：US08129262B1

公开(公告)日：2012-03-06

申请号：US12607041

申请日：2009-10-27

申请人： Constantin Bulucea ,  Fu-Cheng Wang ,  Prasad Chaparala

发明人： Constantin Bulucea ,  Fu-Cheng Wang ,  Prasad Chaparala

IPC分类号： H01L21/04

CPC分类号： H01L29/1083 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/105

摘要： Fabrication of an insulated-gate field-effect transistor (110) entails separately introducing three body-material dopants, typically through an opening in a mask, into body material (50) of a semiconductor body so as to reach respective maximum dopant concentrations at three different vertical locations in the body material. A gate electrode (74) is subsequently defined after which a pair of source/drain zones (60 and 62), each having a main portion (60M or 80M) and a more lightly doped lateral extension (60E or 62E), are formed in the semiconductor body. An anneal is performed during or subsequent to introduction of semiconductor dopant that defines the source/drain zones. The body material is typically provided with at least one more heavily doped halo pocket portion (100 and 102) along the source/drain zones. The vertical dopant profile resulting from the body-material dopants alleviates punchthrough and reduces current leakage.

摘要翻译： 绝缘栅场效应晶体管（110）的制造需要通常将三个体材料掺杂剂（通常通过掩模中的开口）引入半导体主体的主体材料（50）中，以便在三层中达到各自的最大掺杂剂浓度 不同垂直位置的身材。 随后限定栅电极（74），之后在每一个具有主要部分（60M或80M）和更轻掺杂的侧向延伸部（60E或62E）的一对源极/漏极区域（60和62）上形成 半导体体。 在引入定义源极/漏极区的半导体掺杂剂期间或之后进行退火。 主体材料通常沿着源极/漏极区域设置有至少一个更重掺杂的卤素口袋部分（100和102）。 由体材料掺杂物产生的垂直掺杂剂分布减轻穿透并减少电流泄漏。

公开(公告)号：US20110077562A1

公开(公告)日：2011-03-31

申请号：US12659042

申请日：2010-02-24

申请人： Fu-cheng Wang ,  Chung-Huang Yu ,  Nai-Chung Chang ,  Tai-yu Chou

发明人： Fu-cheng Wang ,  Chung-Huang Yu ,  Nai-Chung Chang ,  Tai-yu Chou

IPC分类号： A61H1/00

CPC分类号： A61H1/0266 ,  A61H3/00 ,  A61H2201/5007

摘要： The invention discloses a gait training device for people with walking disability. Using motors and six-bar linkage mechanism, the invention can guide users' ankles to follow preferred gait trajectories, and thus help people with walking disability practice correct gaits.

摘要翻译： 本发明公开了一种步行障碍者的步态训练装置。 使用电机和六杆联动机构，本发明可以指导用户的脚踝跟随优先步态，从而帮助行走障碍者练习正确的步态。

公开(公告)号：US07785971B1

公开(公告)日：2010-08-31

申请号：US11703350

申请日：2007-02-06

申请人： Constantin Bulucea ,  Fu-Cheng Wang ,  Prasad Chaparala

发明人： Constantin Bulucea ,  Fu-Cheng Wang ,  Prasad Chaparala

IPC分类号： H01L21/336

CPC分类号： H01L29/1083 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/105

摘要： Fabrication of complementary first and second insulated-gate field-effect transistors (110 or 112 and 120 or 122) from a semiconductor body entails separately introducing (i) three body-material dopants into the body material (50) for the first transistor so as to reach respective maximum dopant concentrations at three different locations in the first transistor's body material and (ii) two body-material dopants into the body material (130) for the second transistor so as to reach respective maximum dopant concentrations at two different locations in the second transistor's body material. Gate electrodes (74 or 94 and 154 or 194) are subsequently defined after which source/drain zones (60, 62 or 80, 82 and 140, 142 or 160, 162) are formed in the semiconductor body. The vertical dopant profiles resulting from the body-material dopants alleviate punchthrough and reduce current leakage.

摘要翻译： 从半导体主体制造互补的第一和第二绝缘栅场效应晶体管（110或112和120或122）需要将（i）三个体材料掺杂物分别引入用于第一晶体管的体材料（50）中，以便 以在第一晶体管主体材料中的三个不同位置处达到各自的最大掺杂浓度，和（ii）两个体材料掺杂物进入用于第二晶体管的主体材料（130）中，以便达到第二晶体管的两个不同位置处的各自的最大掺杂浓度 第二晶体管的主体材料。 随后在半导体本体中形成源/漏区（60,62或80,82和140,142或160,162）之后限定栅电极（74或94和154或194）。 由体材料掺杂物产生的垂直掺杂剂分布减轻穿透并减少电流泄漏。

公开(公告)号：US20100129781A1

公开(公告)日：2010-05-27

申请号：US12382151

申请日：2009-03-10

申请人： Fu-Cheng Wang ,  Hsiao-Wu Wang

发明人： Fu-Cheng Wang ,  Hsiao-Wu Wang

IPC分类号： G09B23/30

CPC分类号： G09B23/30

摘要： The invention discloses the electrical bronze acupuncture statue apparatus that comprises the electrical elements, the sensors and the embedded system. The invention simulates the acupuncture points for practicing the traditional Chinese medicine treatment and provides the virtual results.

摘要翻译： 本发明公开了一种电子元器件，传感器和嵌入式系统的青铜针灸雕刻装置。 本发明模拟了实践中药治疗的针灸穴位，并提供了虚拟成果。

公开(公告)号：US20090176133A1

公开(公告)日：2009-07-09

申请号：US12275657

申请日：2008-11-21

申请人： Fu-Cheng Wang ,  Hsuan-Tsung Chen

发明人： Fu-Cheng Wang ,  Hsuan-Tsung Chen

IPC分类号： H01M8/04

CPC分类号： H01M8/04753 ,  H01M8/04089 ,  H01M8/04619 ,  H01M8/04992 ,  H01M2008/1095

摘要： A fuel cell control system and a control method thereof are provided. The fuel cell control system includes an air supply module, a fuel supply module having a fuel supply end, a fuel cell set having an electrical output end, an measuring unit and a control module having an arithmetic logic unit. A set of control algorithms is employed to effectively adjust the electrical output in order to identify the transfer function and to perform controller design. When the electrical output of the fuel cell is different from the default electrical output, the controller then regulates the fuel supply and the air supply to provide a stable fuel cell electrical output and to reduce fuel consumption.

摘要翻译： 提供燃料电池控制系统及其控制方法。 燃料电池控制系统包括空气供应模块，具有燃料供给端的燃料供应模块，具有电输出端的燃料电池组，测量单元和具有算术逻辑单元的控制模块。 采用一套控制算法来有效地调整电气输出，以便识别传递函数并执行控制器设计。 当燃料电池的电输出与默认电气输出不同时，控制器然后调节燃料供应和空气供应以提供稳定的燃料电池电输出并降低燃料消耗。

公开(公告)号：US20090139225A1

公开(公告)日：2009-06-04

申请号：US12048652

申请日：2008-03-14

申请人： Fu-Cheng Wang ,  Tz-Chian Lin

发明人： Fu-Cheng Wang ,  Tz-Chian Lin

IPC分类号： F16D31/02

CPC分类号： F15B7/008

摘要： The invention provides a hydraulic inerter mechanism, including: a hydraulic cylinder; a hydraulic motor connected to the hydraulic cylinder, with an output shaft thereon for converting the motion of the hydraulic cylinder from rectilinear motion to rotary motion; and an inertia body disposed on the output shaft. In operation, an external force applied to the inerter mechanism causes displacement of the piston, thereby pushing working fluid inside the hydraulic cylinder to generate a pressure difference between an inlet and an outlet of a hydraulic motor. The differential pressure consequently drives the hydraulic motor to rotate, and then the output shaft further drives the inertia body to rotate, thereby attaining inerter characteristics.

摘要翻译： 本发明提供一种液压重力机构，包括：液压缸; 连接到液压缸的液压马达，其上具有用于将液压缸的运动从直线运动转换成旋转运动的输出轴; 以及设置在输出轴上的惯性体。 在操作中，施加到重力机构的外力引起活塞的移动，从而推动液压缸内的工作流体，以产生液压马达的入口和出口之间的压力差。 因此，压差驱动液压马达旋转，然后输出轴进一步驱动惯性体旋转，从而获得更强的特性。

公开(公告)号：US20090108510A1

公开(公告)日：2009-04-30

申请号：US12220821

申请日：2008-07-29

申请人： Fu-Cheng Wang ,  Mao-Sheng Hsu ,  Wei-Jiun Su ,  Tz-Chain Lin

发明人： Fu-Cheng Wang ,  Mao-Sheng Hsu ,  Wei-Jiun Su ,  Tz-Chain Lin

IPC分类号： F16F15/02 ,  F16F7/10 ,  F16F9/16 ,  F16F15/131

CPC分类号： F16F7/1022 ,  F16F9/12 ,  F16F2232/06

摘要： A screw type inerter mechanism includes a screw with a limit portion and a thread portion with threads; a screw cap engaged with the thread portion of the screw; an inertia body fixed to the limit portion of the screw; and a connection body engaged with the limit portion of the screw wherein an axial of the screw serves as a rotation axial for the screw to rotate relatively to the connection body. Thus, when a non-zero external force is applied to the inerter mechanism to generate relative horizontal displacement between the screw cap and the connection body, the screw cap brings the screw to rotate, which further brings the inertia body to rotate, thereby achieving the inerter features.

摘要翻译： 螺杆型重力机构包括具有极限部分的螺钉和具有螺纹的螺纹部分; 与螺钉的螺纹部分接合的螺帽; 固定到螺钉的限制部分的惯性体; 以及与所述螺钉的所述极限部分接合的连接体，其中所述螺杆的轴向用作所述螺杆相对于所述连接体旋转的旋转轴。 因此，当将非零的外力施加到重力机构以在螺帽和连接体之间产生相对水平位移时，螺帽将螺杆旋转，这进一步使惯性体旋转，从而实现 更强的功能

公开(公告)号：US07145191B1

公开(公告)日：2006-12-05

申请号：US10922035

申请日：2004-08-18

申请人： Chih Sieh Teng ,  Constantin Bulucea ,  Chin-Miin Shyu ,  Fu-Cheng Wang ,  Prasad Chaparala

发明人： Chih Sieh Teng ,  Constantin Bulucea ,  Chin-Miin Shyu ,  Fu-Cheng Wang ,  Prasad Chaparala

IPC分类号： H01L29/76

CPC分类号： H01L29/1083 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/105

摘要： The source/drain zones (140 and 142 or 160 and 162) of a p-channel IGFET (120 or 122) are provided with graded-junction characteristics to reduce junction capacitance, thereby increasing switching speed. Each source/drain zone contains a main portion (140M, 142M, 160M, or 162M) and a more lightly doped lower portion (140L, 142L, 160L, or 162L) underlying, and vertically continuous with, the main portion.

摘要翻译： p沟道IGFET（120或122）的源极/漏极区（140和142或160和162）具有渐变结特征以减小结电容，从而提高开关速度。 每个源极/漏极区域包含主要部分（140M，142M，160M，或162M）和较轻掺杂的下部分（140L，142L，160L或162L），并且垂直连续 ，主要部分。

公开(公告)号：US06548842B1

公开(公告)日：2003-04-15

申请号：US09540442

申请日：2000-03-31

申请人： Constantin Bulucea ,  Fu-Cheng Wang ,  Prasad Chaparala

发明人： Constantin Bulucea ,  Fu-Cheng Wang ,  Prasad Chaparala

IPC分类号： H01L2994

CPC分类号： H01L29/66492 ,  H01L21/26586 ,  H01L21/823807 ,  H01L21/823892 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/665

摘要： An IGFET (40 or 42) has a channel zone (64 or 84) situated in body material (50). Short-channel threshold voltage roll-off and punchthrough are alleviated by arranging for the net dopant concentration in the channel zone to longitudinally reach a local surface minimum at a location between the IGFET's source/drain zones (60 and 62 or 80 and 82) and by arranging for the net dopant concentration in the body material to reach a local subsurface maximum more than 0.1 &mgr;m deep into the body material but not more than 0.4 &mgr;m deep into the body material.

摘要翻译： IGFET（40或42）具有位于主体材料（50）中的通道区（64或84）。 通过设置通道区域中的净掺杂剂浓度以在IGFET的源极/漏极区域（60和62或80和82）之间的位置处纵向达到局部表面最小值来减轻短通道阈值电压滚降和穿透，以及 通过布置主体材料中的净掺杂剂浓度达到主体材料深度超过0.1μm的局部地下最大深度，但不超过0.4μm的主体材料深度。