公开(公告)号：US5949125A

公开(公告)日：1999-09-07

申请号：US831709

申请日：1997-04-10

Applicant: George R. Meyer

Inventor： George R. Meyer

IPC: H01L21/316 ,  H01L21/76 ,  H01L21/762 ,  H01L23/544 ,  H01L29/00

CPC classification number: H01L23/544 ,  H01L21/76229 ,  H01L2223/54406 ,  H01L2223/54453 ,  H01L2924/0002

Abstract: Narrow and wide, planar field isolation region (72, 74, 152, 172, 182) is formed by forming trenches (52, 54) within a substrate (10). For wide, planar field isolation regions (72, 152, 172, 182), the trenches (52) define at least one mesa (76, 150, 170, 180) within the field isolation region (72, 152, 172, 182). The trenches (52, 54) are filled with a material (62) that is polished or etched to form the planar field isolation region (72, 74, 152, 172, 182) where the wide, planar field isolation regions (72, 152, 172, 182) include the mesa(s) (76, 150, 170, 180). Etching can be used or by polishing with minimal, if any, dishing occurs because the widths of the trenches (52, 54) are kept relatively narrow (usually no more than five microns wide). Mesas (180) within a wide, planar field isolation region (182) can form linguistic characters to better identify the part number or mask set of the device. The planar field isolation region (72, 74, 152, 172, 182) can be formed near LOCOS-type field isolation regions when required for certain types of input protection circuits or high potential components.

Abstract translation: 通过在衬底（10）内形成沟槽（52,54）形成狭窄且宽的平面场隔离区域（72,74,152,172,182）。 对于宽的平面场隔离区域（72,152,172,182），沟槽（52）限定了场隔离区域（72,152,172,182）内的至少一个台面（76,150,170,180） 。 沟槽（52,54）填充有抛光或蚀刻以形成平面场隔离区域（72,74,152,172,182）的材料（62），其中宽的平面场隔离区域（72,152 ，172,182）包括台面（76,150,170,180）。 因为沟槽（52,54）的宽度保持相对较窄（通常不超过5微米宽），所以可以使用或通过最少的抛光（如果有的话）进行蚀刻。 宽平面场隔离区域（182）内的平台（180）可以形成语言字符以更好地识别设备的部件号或掩模组。 当需要某些类型的输入保护电路或高电位分量时，可以在LOCOS型场隔离区附近形成平面场隔离区（72,74,152,172,182）。

公开(公告)号：US4863487A

公开(公告)日：1989-09-05

申请号：US43736

申请日：1987-04-29

Applicant: George R. Meyer ,  Walter R. Lyons, Jr.

Inventor： George R. Meyer ,  Walter R. Lyons, Jr.

IPC: B01F17/22 ,  C10L1/224 ,  C10L10/18 ,  C11D1/52 ,  C11D17/00

CPC classification number: C10L1/224

Abstract: Detergents for hydrocarbon fuels, and hydrocarbon fuels containing detergents are provided wherein the detergent is comprised of an alkenylsuccinimide prepared by reacting an alkenylsuccinic acid or anhydride with a mixture of amines. The alkenyl substituent is substantially derived from an olefin having a carbon chain or from 8 to 10 carbons or mixtures thereof.

Abstract translation: 提供用于碳氢燃料的洗涤剂和含有洗涤剂的烃燃料，其中洗涤剂由烯基琥珀酸或酸酐与胺的混合物反应制备的烯基琥珀酰亚胺组成。 烯基取代基基本上衍生自具有碳链或碳原子数为8〜10的烯烃或其混合物。

公开(公告)号：US5928962A

公开(公告)日：1999-07-27

申请号：US88013

申请日：1998-06-01

Applicant: Janos Farkas ,  Sanjit K. Das ,  George R. Meyer

Inventor： Janos Farkas ,  Sanjit K. Das ,  George R. Meyer

IPC: B24B37/04 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/66 ,  H01L21/00

CPC classification number: H01L22/20 ,  B24B37/04 ,  H01L21/31053

Abstract: Physical properties of alumina particles in a chemical-mechanical polishing slurry delivery loop (28) are measured using a titration technique (44). Examples of the physical properties include crystallographic phase, surface charge, and surface charge density. The physical properties are correlated to a polishing rate (46). Specification limits are generated using the correlated data (482 and 486). The specification limits are used to determine if no adjustments are required to the polishing parameters (484), if adjustments are required to polishing parameters (488) or if the slurry requires replacement (489). This process can be automated and integrated into a conventional chemical-mechanical polishing processing system (20).

Abstract translation: 使用滴定技术（44）测量化学机械抛光浆料输送回路（28）中氧化铝颗粒的物理性质。 物理性质的实例包括结晶相，表面电荷和表面电荷密度。 物理性质与抛光速率相关（46）。 使用相关数据（482和486）生成规格限制。 规范限制用于​​确定抛光参数（484）是否不需要调整，如果需要调整抛光参数（488）或如果浆料需要更换（489）。 该过程可以自动化并且集成到常规的化学 - 机械抛光处理系统（20）中。

公开(公告)号：US5024677A

公开(公告)日：1991-06-18

申请号：US536288

申请日：1990-06-11

Applicant: Sophia L. Wang ,  George R. Meyer ,  Kerry C. Brinkman

Inventor： Sophia L. Wang ,  George R. Meyer ,  Kerry C. Brinkman

IPC: C10L1/10 ,  C10L1/12 ,  C10L1/18 ,  C10L1/22 ,  C10L1/232 ,  C10L10/04

CPC classification number: C10L1/232 ,  C10L1/106 ,  C10L1/22 ,  C10L10/04 ,  C10L1/125 ,  C10L1/1881 ,  C10L1/224 ,  C10L1/2383 ,  C10L1/2387

Abstract: Rust of ferrous metal surfaces that are in contact with gasohol or alcohol fuels is inhibited by the addition of a corrosion inhibiting amount of the combination of (A) a substituted imidazoline and (B) an alkenyl succinimide of a mixture of alkylenepolyamines.

Abstract translation: 通过加入腐蚀抑制量的（A）取代的咪唑啉和（B）亚烷基多胺的混合物的链烯基琥珀酰亚胺的组合来抑制与汽油或醇燃料接触的黑色金属表面的锈蚀。

公开(公告)号：US06285066B1

公开(公告)日：2001-09-04

申请号：US09350842

申请日：1999-07-09

Applicant: George R. Meyer

Inventor： George R. Meyer

IPC: H01L2710

CPC classification number: H01L23/544 ,  H01L21/76229 ,  H01L2223/54406 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Narrow and wide, planar field isolation region (72, 74, 152, 172, 182) is formed by forming trenches (52, 54) within a substrate (10). For wide, planar field isolation regions (72, 152, 172, 182), the trenches (52) define at least one mesa (76, 150, 170, 180) within the field isolation region (72, 152, 172, 182). The trenches (52, 54) are filled with a material (62) that is polished or etched to form the planar field isolation region (72, 74, 152, 172, 182) where the wide, planar field isolation regions (72, 152, 172, 182) include the mesa(s) (76, 150, 170, 180). Etching can be used or by polishing with minimal, if any, dishing occurs because the widths of the trenches (52, 54) are kept relatively narrow (usually no more than five microns wide). Mesas (180) within a wide, planar field isolation region (182) can form linguistic characters to better identify the part number or mask set of the device. The planar field isolation region (72, 74, 152, 172, 182) can be formed near LOCOS-type field isolation regions when required for certain types of input protection circuits or high potential components.

Abstract translation: 通过在衬底（10）内形成沟槽（52,54）形成狭窄且宽的平面场隔离区域（72,74,152,172,182）。 对于宽的平面场隔离区域（72,152,172,182），沟槽（52）限定了场隔离区域（72,152,172,182）内的至少一个台面（76,150,170,180） 。 沟槽（52,54）填充有抛光或蚀刻以形成平面场隔离区域（72,74,152,172,182）的材料（62），其中宽的平面场隔离区域（72,152 ，172,182）包括台面（76,150,170,180）。 因为沟槽（52,54）的宽度保持相对较窄（通常不超过5微米宽），所以可以使用或通过最少的抛光（如果有的话）进行蚀刻。 宽平面场隔离区域（182）内的平台（180）可以形成语言字符以更好地识别设备的部件号或掩模组。 当需要某些类型的输入保护电路或高电位分量时，可以在LOCOS型场隔离区附近形成平面场隔离区（72,74,152,172,182）。

公开(公告)号：US4895578A

公开(公告)日：1990-01-23

申请号：US241879

申请日：1988-09-08

Applicant: George R. Meyer ,  Walter R. Lyons, Jr.

Inventor： George R. Meyer ,  Walter R. Lyons, Jr.

IPC: C10L1/224

CPC classification number: C10L1/224

Abstract: Detergents for hydrocarbon fuels, and hydrocarbon fuels containing detergents are provided wherein the detergent is comprised of an alkenylsuccinimide prepared by reacting an alkenylsuccinic acid or anhydride with a mixture of amines. The alkenyl substituent is substantially derived from an olefin having a carbon chain of from 8 to 10 carbons or mixtures thereof.

Abstract translation: 提供用于碳氢燃料的洗涤剂和含有洗涤剂的烃燃料，其中洗涤剂由烯基琥珀酸或酸酐与胺的混合物反应制备的烯基琥珀酰亚胺组成。 烯基取代基基本上衍生自碳链为8〜10个碳的烯烃或其混合物。

公开(公告)号：US4874395A

公开(公告)日：1989-10-17

申请号：US239801

申请日：1988-09-02

Applicant: George R. Meyer

Inventor： George R. Meyer

IPC: C10L1/222 ,  C10L10/04

CPC classification number: C10L1/2222 ,  C10L10/04

Abstract: A corrosion inhibitor composition for hydrocarbon fuels comprising a C.sub.10 -C.sub.24 alkenyl succinic anhydride esterified with between 0.5-1.5 moles of a water-soluble glycol and then neutralized with an amine.The invention also contemplates improved hydrocarbon fuels which comprise a major portion of such fuels which contain small quantities of the above described composition.

Abstract translation: 用于烃燃料的腐蚀抑制剂组合物包含用0.5-1.5摩尔水溶性二醇酯化并随后用胺中和的C 10 -C 24链烯基琥珀酸酐。 本发明还考虑了改进的烃燃料，其包含主要部分的这种燃料，其含有少量上述组成。

公开(公告)号：US5665633A

公开(公告)日：1997-09-09

申请号：US417524

申请日：1995-04-06

Applicant: George R. Meyer

Inventor： George R. Meyer

IPC: H01L21/316 ,  H01L21/76 ,  H01L21/762 ,  H01L23/544

CPC classification number: H01L23/544 ,  H01L21/76229 ,  H01L2223/54406 ,  H01L2223/54453 ,  H01L2924/0002

Abstract: Narrow and wide, planar field isolation region (72, 74, 152, 172, 182) is formed by forming trenches (52, 54) within a substrate (10). For wide, planar field isolation regions (72, 152, 172, 182), the trenches (52) define at least one mesa (76, 150, 170, 180) within the field isolation region (72, 152, 172, 182). The trenches (52, 54) are filled with a material (62) that is polished or etched to form the planar field isolation region (72, 74, 152, 172, 182) where the wide, planar field isolation regions (72, 152, 172, 182) include the mesa(s) (76, 150, 170, 180). Etching can be used or by polishing with minimal, if any, dishing occurs because the widths of the trenches (52, 54) are kept relatively narrow (usually no more than five microns wide). Mesas (180) within a wide, planar field isolation region (182) can form linguistic characters to better identify the part number or mask set of the device. The planar field isolation region (72, 74, 152, 172, 182) can be formed near LOCOS-type field isolation regions when required for certain types of input protection circuits or high potential components.

Abstract translation: 通过在衬底（10）内形成沟槽（52,54）形成狭窄且宽的平面场隔离区域（72,74,152,172,182）。 对于宽的平面场隔离区域（72,152,172,182），沟槽（52）限定了场隔离区域（72,152,172,182）内的至少一个台面（76,150,170,180） 。 沟槽（52,54）填充有抛光或蚀刻以形成平面场隔离区域（72,74,152,172,182）的材料（62），其中宽的平面场隔离区域（72,152 ，172,182）包括台面（76,150,170,180）。 因为沟槽（52,54）的宽度保持相对较窄（通常不超过5微米宽），所以可以使用或通过最少的抛光（如果有的话）进行蚀刻。 宽平面场隔离区域（182）内的平台（180）可以形成语言字符以更好地识别设备的部件号或掩模组。 当需要某些类型的输入保护电路或高电位分量时，可以在LOCOS型场隔离区附近形成平面场隔离区（72,74,152,172,182）。

公开(公告)号：US5443998A

公开(公告)日：1995-08-22

申请号：US878051

申请日：1992-05-04

Applicant: George R. Meyer

Inventor： George R. Meyer

IPC: H01L21/3105 ,  H01L21/02

CPC classification number: H01L21/3105

Abstract: A method of forming a chlorinated silicon nitride barrier layer is disclosed. The method of the present invention includes depositing a silicon nitride layer over a semiconductor substrate. The silicon nitride layer is exposed to an ambient including chlorine at an elevated temperature for a predetermined time to form the chlorinated silicon nitride barrier layer that is resistant to attack by at least one reactive compound.

Abstract translation: 公开了一种形成氯化氮化硅阻挡层的方法。 本发明的方法包括在半导体衬底上沉积氮化硅层。 氮化硅层在升高的温度下暴露于包括氯的环境预定时间以形成耐受至少一种反应性化合物侵蚀的氯化氮化硅阻挡层。