公开(公告)号：US4393127A

公开(公告)日：1983-07-12

申请号：US284268

申请日：1981-07-17

申请人： Johann Greschner ,  Georg Kraus ,  Gerhard E. Schmid

发明人： Johann Greschner ,  Georg Kraus ,  Gerhard E. Schmid

IPC分类号： C30B33/00 ,  G03F1/20 ,  H01L21/027 ,  H01L29/06 ,  H01L21/306

CPC分类号： G03F1/20 ,  H01L29/0657 ,  Y10S430/167 ,  Y10S430/168 ,  Y10T428/24331 ,  Y10T428/3171

摘要： A structure for shaping or masking energetic radiation is described. The structure comprises a shallow silicon body having at least one through opening, and a metal silicide layer covering the surface of the structure. The structure characterized by having a high mechanical, and thermal stability may be used particularly in electron and X-ray lithography. More specifically, the structure may be used as an aperture for electron beams, or as a mask for X-rays. The production of the structure includes the steps of making through openings in the silicon body, and the forming of the silicide layer by vapor depositing a metal on the surface of the silicon body and by subsequent annealing.

摘要翻译： 描述了用于塑化或掩蔽能量辐射的结构。 该结构包括具有至少一个通孔的浅硅体和覆盖该结构表面的金属硅化物层。 特征在于具有高机械和热稳定性的结构可以特别用于电子和X射线光刻中。 更具体地，该结构可以用作电子束的孔，或者用作X射线的掩模。 该结构的制造包括在硅体中形成通孔的步骤，以及通过在硅体的表面上气相沉积金属并随后进行退火来形成硅化物层。

公开(公告)号：US4356066A

公开(公告)日：1982-10-26

申请号：US248141

申请日：1981-03-30

申请人： Gerhard E. Schmid ,  Werner Steiner ,  Gerhard Trippel

发明人： Gerhard E. Schmid ,  Werner Steiner ,  Gerhard Trippel

IPC分类号： G11B5/66 ,  C09D163/00 ,  G11B5/73 ,  G11B5/738 ,  G11B5/82 ,  G11B5/84 ,  G11B5/85 ,  G11B5/858 ,  H01F10/30 ,  H01R12/18 ,  C25D11/04

CPC分类号： H01F10/30 ,  G11B5/7315 ,  G11B5/8404 ,  Y10S205/922 ,  Y10S428/90

摘要： Multi-layer magnetic thin film disks comprising a synthetic resin layer on an aluminum-containing substrate and an overlying metallic magnetic layer, are liable to have pin holes in the synthetic resin layer caused by galvanic corrosion of the aluminum in the substrate. The pin holes are passivated by aluminum oxide produced therein by anodically oxidizing the aluminum of the substrate in an electrolytic bath, the electric voltage of which is well below the normal passivation voltage for aluminum.

摘要翻译： 在含铝基板上的合成树脂层和上覆的金属磁性层的多层磁性薄膜盘容易在由基板中的铝的电镀腐蚀引起的合成树脂层中具有针孔。 通过在电解槽中阳极氧化基板的铝，其电压远低于铝的正常钝化电压，使其中产生的氧化铝钝化销孔。

公开(公告)号：US4386968A

公开(公告)日：1983-06-07

申请号：US274986

申请日：1981-06-18

申请人： Holger Hinkel ,  Jurgen Kempf ,  Georg Kraus ,  Gerhard E. Schmid

发明人： Holger Hinkel ,  Jurgen Kempf ,  Georg Kraus ,  Gerhard E. Schmid

IPC分类号： H01L21/266 ,  H01L21/265 ,  H01L21/316 ,  H01L21/263

CPC分类号： H01L21/02238 ,  H01L21/02255 ,  H01L21/26513 ,  H01L21/2652 ,  H01L21/31662

摘要： Disclosed is a simplified method of producing semiconductor device structures in an integrated technology using at least one ion implantation step. Implantation of the doping ions into a silicon wafer, for example, for producing a subcollector or an emitter, is not effected, as previously, in an ultra-high vacuum atmosphere through a thin protective layer of silicon dioxide which is applied by a separate thermal oxidation step prior to implantation, but the doping ions are directly implanted into the bare silicon wafer. The latter implantation is effected in an atmosphere of increased partial pressure of oxygen. Enhanced diffusion of the oxygen adsorbed at the surface occurs into the vacancies which are generated by the implanted doping ions close the surface of the silicon wafer. In this manner a silicon dioxide protective layer is formed already in the initial stage of ion implantation. As a result one process step can be saved, namely, the production of the protective layer by thermal oxidation prior to ion implantation.

摘要翻译： 公开了使用至少一个离子注入步骤以集成技术制造半导体器件结构的简化方法。 将掺杂离子注入到例如用于制造子集电极或发射极的硅晶片中，如前所述，在超高真空气氛中通过二氧化硅的薄保护层进行注入，所述薄保护层通过单独的热 在植入之前的氧化步骤，但掺杂离子被直接注入裸硅晶片。 后者的注入在氧分压增加的气氛中进行。 在表面处吸附的氧的增强的扩散发生在由注入的掺杂离子产生的空位中，这些离子靠近硅晶片的表面。 以这种方式，在离子注入的初始阶段已形成二氧化硅保护层。 因此，可以节省一个工艺步骤，即在离子注入之前通过热氧化生产保护层。