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    FABRICATION OF SUBSTRATES WITH A USEFUL LAYER OF MONOCRYSTALLINE SEMICONDUCTOR MATERIAL
    1.
    发明申请
    FABRICATION OF SUBSTRATES WITH A USEFUL LAYER OF MONOCRYSTALLINE SEMICONDUCTOR MATERIAL 有权
    具有有用的单晶半导体材料层的基板的制造

    公开(公告)号：US20120058621A1

    公开(公告)日：2012-03-08

    申请号：US13291468

    申请日：2011-11-08

    申请人： Fabrice Letertre ,  Bruno Ghyselen ,  Olivier Rayssac ,  Pierre Rayssac ,  Gisele Rayssac

    发明人： Fabrice Letertre ,  Bruno Ghyselen ,  Olivier Rayssac ,  Pierre Rayssac ,  Gisele Rayssac

    IPC分类号： H01L21/762

    CPC分类号： H01L21/187 ,  H01L21/76254

    摘要： The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes providing an support that includes a barrier layer thereon for preventing loss by diffusion of elements derived from dissociation of the support at epitaxial growth temperatures; providing a seed layer on the barrier layer, wherein the seed layer facilitates epitaxial growth of a single crystal III-nitride semiconductor layer thereon; epitaxially growing a nitride working layer on the thin seed layer; and removing the support to form the substrate.

    摘要翻译： 本发明涉及制造半导体衬底的方法。 在一个实施方案中，该方法包括提供在其上包括阻挡层的载体，用于防止在外延生长温度下衍生自载体解离的元素的扩散而损失; 在所述阻挡层上提供种子层，其中所述种子层有助于其上的单晶III族氮化物半导体层的外延生长; 在薄种子层上外延生长氮化物工作层; 并移除支撑物以形成基底。

    FABRICATION OF SUBSTRATES WITH A USEFUL LAYER OF MONOCRYSTALLINE SEMICONDUCTOR MATERIAL
    5.
    发明申请
    FABRICATION OF SUBSTRATES WITH A USEFUL LAYER OF MONOCRYSTALLINE SEMICONDUCTOR MATERIAL 有权
    具有有用的单晶半导体材料层的基板的制造

    公开(公告)号：US20110171812A1

    公开(公告)日：2011-07-14

    申请号：US12984895

    申请日：2011-01-05

    申请人： Fabrice Letertre ,  Bruno Ghyselen ,  Olivier Rayssac ,  Pierre Rayssac ,  Gisèle Rayssac

    发明人： Fabrice Letertre ,  Bruno Ghyselen ,  Olivier Rayssac ,  Pierre Rayssac ,  Gisèle Rayssac

    IPC分类号： H01L21/30

    CPC分类号： H01L21/187 ,  H01L21/76254

    摘要： The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes transferring a seed layer on to a support substrate; and depositing a working layer on the seed layer to form a composite substrate. The seed layer is made of a material that accommodates thermal expansion of the support substrate and of the working layer. In another embodiment, the method includes providing a source substrate with a weakened zone defining a nucleation layer, bonding a support substrate to the source substrate, detaching the nucleation layer and support substrate at the weakened zone by applying laser irradiation stress, depositing a semiconductor material upon the nucleation layer, bonding a target substrate to the deposited layer and removing the support substrate and nucleation layer. The result is a semiconductor substrate that includes the layer of semiconductor material on a support or target substrate.

    摘要翻译： 本发明涉及制造半导体衬底的方法。 在一个实施例中，该方法包括将种子层转移到支撑衬底上; 以及在种子层上沉积工作层以形成复合衬底。 种子层由容纳支撑基板和工作层的热膨胀的材料制成。 在另一个实施例中，该方法包括：提供源极基底，其具有限定成核层的弱化区域，将支撑基底结合到源极基底，通过施加激光照射应力在弱化区域分离成核层和支撑基底，沉积半导体材料 在成核层上，将目标衬底粘合到沉积层上并去除支撑衬底和成核层。 结果是在支撑体或靶基板上包括半导体材料层的半导体衬底。

    Fabrication of substrates with a useful layer of monocrystalline semiconductor material
    8.
    发明授权
    Fabrication of substrates with a useful layer of monocrystalline semiconductor material 有权
    用有用的单晶半导体材料层制造衬底

    公开(公告)号：US08252664B2

    公开(公告)日：2012-08-28

    申请号：US13246316

    申请日：2011-09-27

    申请人： Fabrice Letertre ,  Bruno Ghyselen ,  Olivier Rayssac ,  Pierre Rayssac, legal representative ,  Gisèle Rayssac, legal representative

    发明人： Fabrice Letertre ,  Bruno Ghyselen ,  Olivier Rayssac

    IPC分类号： H01L21/46

    CPC分类号： H01L21/187 ,  H01L21/76254

    摘要： The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes providing an support that includes a barrier layer thereon for preventing loss by diffusion of elements derived from dissociation of the support at epitaxial growth temperatures; providing a seed layer on the barrier layer, wherein the seed layer facilitates epitaxial growth of a single crystal III-nitride semiconductor layer thereon; epitaxially growing a nitride working layer on the thin seed layer; and removing the support to form the substrate.

    摘要翻译： 本发明涉及制造半导体衬底的方法。 在一个实施方案中，该方法包括提供在其上包括阻挡层的载体，用于防止在外延生长温度下衍生自载体解离的元素的扩散而损失; 在所述阻挡层上提供种子层，其中所述种子层有助于其上的单晶III族氮化物半导体层的外延生长; 在薄种子层上外延生长氮化物工作层; 并移除支撑物以形成基底。