公开(公告)号：US08567045B2

公开(公告)日：2013-10-29

申请号：US13367355

申请日：2012-02-06

Applicant: Moris Dovek ,  Glen Garfunkel ,  Po Kang Wang

Inventor： Moris Dovek ,  Glen Garfunkel ,  Po Kang Wang

IPC: G11B5/127 ,  H04R31/00

CPC classification number: G11B5/2657 ,  Y10T29/49021 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

Abstract: As track densities increase, it becomes increasingly important, while writing in a given track, not to inadvertently write data in adjoining tracks. This problem has been overcome by limiting the width of material in the ABS plane to what it is at the write gap. The part of the lower pole that is wider than this is recessed back away from the ABS, thereby greatly reducing its magnetic influence on adjacent tracks. Four different embodiments of write heads that incorporate this notion are described together with a description of a general process for their manufacture.

Abstract translation: 随着轨道密度的增加，在写入给定的轨道时，不会无意中在相邻轨道中写入数据变得越来越重要。 通过将ABS平面中的材料的宽度限制在写入间隙内，已经克服了这个问题。 比这个更宽的下极的部分从ABS背面向后凹陷，从而大大降低了对相邻轨道的磁影响。 描述了包含这一概念的写入头的四个不同实施例以及对其制造的一般过程的描述。

公开(公告)号：US08514524B2

公开(公告)日：2013-08-20

申请号：US12151921

申请日：2008-05-09

Applicant: Yan Wu ,  Glen Garfunkel ,  Min Li ,  Yuzuru Iwai ,  Moris Dovek

Inventor： Yan Wu ,  Glen Garfunkel ,  Min Li ,  Yuzuru Iwai ,  Moris Dovek

IPC: G11B5/33 ,  G11B5/127

CPC classification number: G11B5/3163 ,  G11B5/3912 ,  G11B5/398

Abstract: A basic design is disclosed for bottom shield (S1) and top shield (S2) of the reader shields in a magnetic read-write head. The critical part of new design includes an antiferromagnetic film which pins an antiferromagnetically coupled trilayer (AFCT). The simplest embodiment for top shield, for example, would be a film sequence of FM/Ru/FM/AFM. This replaces the normal top shield design which typically comprises a ferromagnetic seed layer and a thicker plated ferromagnetic film. Processes for manufacturing these shields are also described.

公开(公告)号：US20110181988A1

公开(公告)日：2011-07-28

申请号：US13066099

申请日：2011-04-06

Applicant: Glen Garfunkel ,  Moris Dovek ,  Kenichi Takano ,  Joseph Smyth ,  Yuchen Zhou

Inventor： Glen Garfunkel ,  Moris Dovek ,  Kenichi Takano ,  Joseph Smyth ,  Yuchen Zhou

IPC: G11B5/39

CPC classification number: G11B5/11 ,  G11B5/3146 ,  G11B5/3912

Abstract: A method is disclosed for forming a magnetic shield in which all domain patterns and orientations are stable and which are consistently repeated each time said shield is exposed to an initialization field. The shield is given a shape which ensures that all closure domains can align themselves at a reduced angle relative to the initialization direction while still being roughly antiparallel to one another. Most, though not all, of these shapes are variations on trapezoids.

Abstract translation: 公开了一种用于形成磁屏蔽的方法，其中所有的畴图案和取向都是稳定的，并且每当所述屏蔽暴露于初始化场时，它一直被重复。 屏蔽体具有一种形状，其确保所有闭合区域能够相对于初始化方向以缩小的角度对准它们，同时仍然彼此大致反平行。 这些形状的大部分（尽管不是全部）是梯形的变化。

公开(公告)号：US07173795B2

公开(公告)日：2007-02-06

申请号：US10731553

申请日：2003-12-09

Applicant: Glen Garfunkel

Inventor： Glen Garfunkel

IPC: G11B5/127

CPC classification number: G11B5/3912 ,  G11B5/1278 ,  G11B5/399

Abstract: Reader asymmetry control has become an important issue as track widths continue to shrink. This has been achieved by providing adaptive adjustment to the asymmetry of individual heads in the form of an additional permanent hard magnet, which may be internal or external to the head. This special ‘tuning’ magnet biases the shields and the sensor to achieve suitable asymmetry and/or amplification. Head bias adjustments may be done individually or in batch. Both the internal and the external magnet versions are described.

Abstract translation: 读者不对称控制已经成为轨道宽度不断缩小的重要问题。 这已经通过提供对于头部内部或外部的附加永磁硬磁体形式的各个头部的不对称性的适应性调节来实现。 这种特殊的“调谐”磁体将屏蔽和传感器偏置以实现合适的不对称和/或放大。 头偏差调整可以单独或批量完成。 内部和外部磁体都有描述。

公开(公告)号：US20050254173A1

公开(公告)日：2005-11-17

申请号：US11167889

申请日：2005-06-27

Applicant: Glen Garfunkel ,  Moris Dovek ,  Devendra Chhabra

Inventor： Glen Garfunkel ,  Moris Dovek ,  Devendra Chhabra

IPC: G11B5/31 ,  G11B5/60

CPC classification number: G11B5/6005

Abstract: A magnetic read/write head and slider assembly and method for forming said magnetic read/write head and slider assembly, wherein said assembly has improved heat spreading and dissipation properties and exhibits significantly reduced thermal protrusion during operation. The method consists of the formation of a heat sink layer on a portion of either the upper pole yoke or the lower magnetic pole of the writer.

Abstract translation: 用于形成所述磁读/写头和滑块组件的磁读/写磁头和滑块组件及其方法，其中所述组件具有改善的散热和耗散性能，并且在操作期间显示出显着降低的热突起。 该方法包括在写入器的上极轭或下磁极的一部分上形成散热层。

公开(公告)号：US06928721B2

公开(公告)日：2005-08-16

申请号：US09970788

申请日：2001-10-05

Applicant: Devendra S. Chhabra ,  Rod Lee ,  Glen Garfunkel ,  Moris Dovek ,  Cherng-Chyi Han

Inventor： Devendra S. Chhabra ,  Rod Lee ,  Glen Garfunkel ,  Moris Dovek ,  Cherng-Chyi Han

IPC: G11B5/31 ,  G11B5/60 ,  G11B5/127

CPC classification number: G11B5/6005 ,  G11B5/3136 ,  Y10T29/49027 ,  Y10T29/4903 ,  Y10T29/49032

Abstract: A method of fabricating a magnetic read/write head and slider assembly, wherein the assembly has improved heat spreading and dissipation properties and the read/write head exhibits significantly reduced thermal protrusion during operation. The method of fabrication is simple and efficient, involving only the extension of at least one of the conductive mounting pads so that it is in thermal contact with a portion of the slider surface that is directly above the read/write element.

Abstract translation: 一种制造磁读/写头和滑块组件的方法，其中该组件具有改进的散热和散热特性，并且读/写头在操作期间表现出显着降低的热突起。 制造方法简单而有效，仅涉及至少一个导电安装焊盘的延伸部分，使得其与滑块表面的正好在读/写元件上方的部分热接触。

公开(公告)号：US08339751B2

公开(公告)日：2012-12-25

申请号：US13066099

申请日：2011-04-06

Applicant: Glen Garfunkel ,  Moris Dovek ,  Kenichi Takano ,  Joseph Smyth ,  Yuchen Zhou

Inventor： Glen Garfunkel ,  Moris Dovek ,  Kenichi Takano ,  Joseph Smyth ,  Yuchen Zhou

IPC: G11B5/39

CPC classification number: G11B5/11 ,  G11B5/3146 ,  G11B5/3912

Abstract: A method is disclosed for forming a magnetic shield in which all domain patterns and orientations are stable and which are consistently repeated each time said shield is exposed to an initialization field. The shield is given a shape which ensures that all closure domains can align themselves at a reduced angle relative to the initialization direction while still being roughly antiparallel to one another. Most, though not all, of these shapes are variations on trapezoids.

Abstract translation: 公开了一种用于形成磁屏蔽的方法，其中所有区域图案和取向是稳定的，并且每当所述屏蔽暴露于初始化场时一直被重复。 该护罩具有一种形状，其确保所有封闭区域能够相对于初始化方向以较小的角度对准自身，同时仍然彼此大致反平行。 这些形状的大部分（尽管不是全部）是梯形的变化。

公开(公告)号：US20090279213A1

公开(公告)日：2009-11-12

申请号：US12151921

申请日：2008-05-09

Applicant: Yan Wu ,  Glen Garfunkel ,  Min Li ,  Yuzuru Iwai ,  Moris Dovek

Inventor： Yan Wu ,  Glen Garfunkel ,  Min Li ,  Yuzuru Iwai ,  Moris Dovek

IPC: G11B5/33

CPC classification number: G11B5/3163 ,  G11B5/3912 ,  G11B5/398

Abstract: A basic design is disclosed for bottom shield (S1) and top shield (S2) of the reader shields in a magnetic read-write head. The critical part of new design includes an antiferromagnetic film which pins an antiferromagnetically coupled trilayer (AFCT). The simplest embodiment for top shield, for example, would be a film sequence of FM/Ru/FM/AFM. This replaces the normal top shield design which typically comprises a ferromagnetic seed layer and a thicker plated ferromagnetic film. Processes for manufacturing these shields are also described.

Abstract translation: 公开了一种读写器的屏蔽罩（S1）和屏蔽罩（S2）在磁读写头中屏蔽的基本设计。 新设计的关键部分包括引导反铁磁耦合三层（AFCT）的反铁磁膜。 例如，用于顶部屏蔽的最简单的实施例将是FM / Ru / FM / AFM的胶片序列。 这代替通常的顶层屏蔽设计，其通常包括铁磁种子层和较厚的镀层铁磁膜。 还描述了用于制造这些屏蔽的工艺。

公开(公告)号：US20090034130A1

公开(公告)日：2009-02-05

申请号：US11888856

申请日：2007-08-02

Applicant: Glen Garfunkel ,  Moris Dovek ,  Kenichi Takano ,  Joseph Smyth ,  Yuchen Zhou

Inventor： Glen Garfunkel ,  Moris Dovek ,  Kenichi Takano ,  Joseph Smyth ,  Yuchen Zhou

IPC: G11B5/127 ,  G11B5/33

CPC classification number: G11B5/11 ,  G11B5/3146 ,  G11B5/3912

Abstract: A magnetic shield in which all domain patterns and orientations are stable and which are consistently repeated each time said shield is exposed to an initialization field, is disclosed. This has been achieved by giving it a suitable shape which ensures that all closure domains can align themselves at a reduced angle relative to the initialization direction while still being roughly antiparallel to one another. Most, though not all, of these shapes are variations on trapezoids.

Abstract translation: 公开了一种磁屏蔽，其中所有的畴图案和取向都是稳定的，并且每当所述屏蔽暴露于初始化场时一直被重复。 这已经通过赋予其合适的形状来实现，该形状确保所有封闭区域能够相对于初始化方向以相对于初始化方向减小的角度对准它们，同时仍然彼此大致反平行。 这些形状的大部分（尽管不是全部）是梯形的变化。

公开(公告)号：US5614727A

公开(公告)日：1997-03-25

申请号：US473036

申请日：1995-06-06

Applicant: Daniele Mauri ,  Wen Y. Lee ,  Cherngye Hwang ,  Glen Garfunkel

Inventor： Daniele Mauri ,  Wen Y. Lee ,  Cherngye Hwang ,  Glen Garfunkel

IPC: H01L29/24 ,  H01L29/267 ,  H01L29/45 ,  H01L29/861 ,  H01L29/12

CPC classification number: H01L29/45 ,  H01L29/242 ,  H01L29/267 ,  H01L29/861

Abstract: A thin film diode and method of fabrication having large current capability and low-turn on voltage is provided as a switching or protective device against electrostatic discharge in integrated devices such as magnetoresistive sensors and the like. A first semiconductor thin film layer of NiO.sub.x having p type properties is disposed on an arbitrary substrate, such as alumina, glass, silicon dioxide, silicon and the like. A second semiconducting layer of tin oxide or indium oxide or other transparent oxide is joined to the first layer to form a p/n junction. In one method of fabrication, the p/n junction is formed in a sputtering process under a partial oxygen pressure to control the stoichiometry of the films. Gold and Gold Indium contacts are attached to the films to provide electrical contacts. The device is enclosed in a protective coating and connected in parallel with an electronic device subject to electrostatic discharge.

Abstract translation: 提供具有大电流能力和低匝导通电压的薄膜二极管和制造方法作为抵抗静电放电的开关或保护装置，诸如磁阻传感器等集成器件。 具有p型性质的NiOx的第一半导体薄膜层设置在任意的基板上，例如氧化铝，玻璃，二氧化硅，硅等。 氧化锡或氧化铟或其它透明氧化物的第二半导电层被接合到第一层以形成p / n结。 在一种制造方法中，在部分氧气压力下以溅射工艺形成p / n结，以控制膜的化学计量。 金和铟铟触点连接到电影以提供电触点。 该装置封装在保护涂层中，并与静电放电的电子设备并联连接。