Methods of using semiconductor fabrication techniques for making imagery
    2.
    发明授权
    Methods of using semiconductor fabrication techniques for making imagery 有权
    使用半导体制造技术制作图像的方法

    公开(公告)号:US08011697B2

    公开(公告)日:2011-09-06

    申请号:US11850607

    申请日:2007-09-05

    IPC分类号: B42D15/00 B42D15/10

    摘要: Described herein are various embodiments of imagery or items comprising imagery using semiconductor processing or fabrication techniques and methods of using such techniques to make imagery. For example, according to one embodiment, a method of making imagery having nano-scale or micro-scale portions can include providing a silicon wafer, coating the silicon wafer with a layer of oxide, depositing a layer of photoresist onto the oxide layer, and removing a patterned portion of the photoresist to expose a patterned portion of the oxide layer. The method can also include removing at least some of the patterned portion of the oxide such that the patterned portion of the oxide layer has a predetermined thickness resulting in a predetermined viewable color. The patterned portion of the oxide layer can define at least one of the nano-scale or micro-scale portions.

    摘要翻译: 这里描述的是包括使用半导体处理的图像或制造技术的图像或物品的各种实施例以及使用这些技术来制作图像的方法。 例如,根据一个实施例,制造具有纳米尺度或微尺度部分的图像的方法可以包括提供硅晶片,用氧化层涂覆硅晶片,在氧化物层上沉积光致抗蚀剂层,以及 去除光致抗蚀剂的图案部分以暴露氧化物层的图案化部分。 该方法还可以包括去除氧化物的图案化部分中的至少一些,使得氧化物层的图案化部分具有预定的厚度,从而获得预定的可见颜色。 氧化物层的图案化部分可以限定纳米尺度或微尺度部分中的至少一个。

    Targets and processes for fabricating same
    3.
    发明授权
    Targets and processes for fabricating same 有权
    目的及制造方法

    公开(公告)号:US08750459B2

    公开(公告)日:2014-06-10

    申请号:US13418003

    申请日:2012-03-12

    IPC分类号: H01J35/08

    摘要: In particular embodiments, the present disclosure provides targets including a metal layer and defining a hollow inner surface. The hollow inner surface has an internal apex. The distance between at least two opposing points of the internal apex is less than about 15 μm. In particular examples, the distance is less than about 1 μm. Particular implementations of the targets are free standing. The targets have a number of disclosed shaped, including cones, pyramids, hemispheres, and capped structures. The present disclosure also provides arrays of such targets. Also provided are methods of forming targets, such as the disclosed targets, using lithographic techniques, such as photolithographic techniques. In particular examples, a target mold is formed from a silicon wafer and then one or more sides of the mold are coated with a target material, such as one or more metals.

    摘要翻译: 在具体实施方案中,本公开提供了包括金属层并限定中空内表面的靶。 中空的内表面具有内部顶点。 内部顶点的至少两个相对点之间的距离小于约15μm。 在具体示例中,该距离小于约1μm。 目标的具体实现是独立的。 目标具有许多公开的形状,包括锥体,金字塔,半球和封盖结构。 本公开还提供了这样的靶的阵列。 还提供了使用光刻技术(诸如光刻技术)形成靶的方法,例如所公开的靶。 在具体实例中,目标模具由硅晶片形成,然后模具的一侧或多侧涂覆有目标材料,例如一种或多种金属。

    TARGETS AND PROCESSES FOR FABRICATING SAME
    4.
    发明申请
    TARGETS AND PROCESSES FOR FABRICATING SAME 审中-公开
    用于制造它们的目标和工艺

    公开(公告)号:US20110104480A1

    公开(公告)日:2011-05-05

    申请号:US12918292

    申请日:2009-02-19

    IPC分类号: B32B15/00 B32B5/00 H01L21/30

    摘要: In one embodiment, the present disclosure provides a target or mold having one or more support arms coupled to a substrate. The support arm can be used in handling or positioning a target. In another embodiment, the present disclosure provides target molds, targets produced using such molds, and a method for producing the targets and molds. In various implementations, the targets are formed in a number of disclosed shapes, including a funnel cone, a funnel cone having an extended neck, those having Gaussian-profile, a cup, a target having embedded metal slugs, metal dotted foils, wedges, metal stacks, a Winston collector having a hemispherical apex, and a Winston collector having an apex aperture. In yet another embodiment, the present disclosure provides a target mounting and alignment system.

    摘要翻译: 在一个实施例中,本公开提供了具有耦合到基板的一个或多个支撑臂的靶或模具。 支撑臂可用于处理或定位目标。 在另一个实施例中,本公开提供了目标模具,使用这种模具生产的靶材,以及用于制造靶材和模具的方法。 在各种实施方案中,目标以许多公开的形状形成,包括漏斗锥体,具有延伸颈部的漏斗锥体,具有高斯分布的锥形锥体,杯状物,具有嵌入金属块的靶,金属点状箔,楔形物, 金属叠层,具有半球形顶点的Winston收集器和具有顶点孔径的Winston收集器。 在另一个实施例中,本公开提供了目标安装和对准系统。

    TARGETS AND PROCESSES FOR FABRICATING SAME
    6.
    发明申请
    TARGETS AND PROCESSES FOR FABRICATING SAME 有权
    用于制造它们的目标和工艺

    公开(公告)号:US20140030542A1

    公开(公告)日:2014-01-30

    申请号:US13839973

    申请日:2013-03-15

    IPC分类号: H05H1/02

    摘要: In particular embodiments, the present disclosure provides targets including a metal layer and defining a hollow inner surface. The hollow inner surface has an internal apex. The distance between at least two opposing points of the internal apex is less than about 15 μm. In particular examples, the distance is less than about 1 μm. Particular implementations of the targets are free standing. The targets have a number of disclosed shaped, including cones, pyramids, hemispheres, and capped structures. The present disclosure also provides arrays of such targets. Also provided are methods of forming targets, such as the disclosed targets, using lithographic techniques, such as photolithographic techniques. In particular examples, a target mold is formed from a silicon wafer and then one or more sides of the mold are coated with a target material, such as one or more metals.

    摘要翻译: 在具体实施方案中,本公开提供了包括金属层并限定中空内表面的靶。 中空的内表面具有内部顶点。 内部顶点的至少两个相对的点之间的距离小于约15μm。 在具体示例中,距离小于约1um。 目标的具体实现是独立的。 目标具有许多公开的形状,包括锥体,金字塔,半球和封盖结构。 本公开还提供了这样的靶的阵列。 还提供了使用光刻技术(诸如光刻技术)形成靶的方法,例如所公开的靶。 在具体实例中,目标模具由硅晶片形成,然后模具的一侧或多侧涂覆有目标材料,例如一种或多种金属。

    TARGETS AND PROCESSES FOR FABRICATING SAME
    8.
    发明申请
    TARGETS AND PROCESSES FOR FABRICATING SAME 有权
    用于制造它们的目标和工艺

    公开(公告)号:US20150328777A1

    公开(公告)日:2015-11-19

    申请号:US14319592

    申请日:2014-06-30

    摘要: In one embodiment, the present disclosure provides a target or mold having one or more support arms coupled to a substrate. The support arm can be used in handling or positioning a target. In another embodiment, the present disclosure provides target molds, targets produced using such molds, and a method for producing the targets and molds. In various implementations, the targets are formed in a number of disclosed shapes, including a funnel cone, a funnel cone having an extended neck, those having Gaussian-profile, a cup, a target having embedded metal slugs, metal dotted foils, wedges, metal stacks, a Winston collector having a hemispherical apex, and a Winston collector having an apex aperture. In yet another embodiment, the present disclosure provides a target mounting and alignment system.

    摘要翻译: 在一个实施例中,本公开提供了具有耦合到基板的一个或多个支撑臂的靶或模具。 支撑臂可用于处理或定位目标。 在另一个实施例中,本公开提供了目标模具,使用这种模具生产的靶材,以及用于制造靶材和模具的方法。 在各种实施方案中,目标以许多公开的形状形成,包括漏斗锥体,具有延伸颈部的漏斗锥体,具有高斯分布的锥形锥体,杯状物,具有嵌入金属块的靶,金属点状箔,楔形物, 金属叠层,具有半球形顶点的Winston收集器和具有顶点孔径的Winston收集器。 在另一个实施例中,本公开提供了目标安装和对准系统。

    METHODS OF USING SEMICONDUCTOR FABRICATION TECHNIQUES FOR MAKING IMAGERY
    10.
    发明申请
    METHODS OF USING SEMICONDUCTOR FABRICATION TECHNIQUES FOR MAKING IMAGERY 审中-公开
    使用半导体制造技术制作图像的方法

    公开(公告)号:US20110316270A1

    公开(公告)日:2011-12-29

    申请号:US13226132

    申请日:2011-09-06

    摘要: Described herein are various embodiments of imagery or items comprising imagery using semiconductor processing or fabrication techniques and methods of using such techniques to make imagery. For example, according to one embodiment, a method of making imagery having nano-scale or micro-scale portions can include providing a silicon wafer, coating the silicon wafer with a layer of oxide, depositing a layer of photoresist onto the oxide layer, and removing a patterned portion of the photoresist to expose a patterned portion of the oxide layer. The method can also include removing at least some of the patterned portion of the oxide such that the patterned portion of the oxide layer has a predetermined thickness resulting in a predetermined viewable color. The patterned portion of the oxide layer can define at least one of the nano-scale or micro-scale portions.

    摘要翻译: 这里描述的是包括使用半导体处理的图像或制造技术的图像或物品的各种实施例以及使用这些技术来制作图像的方法。 例如,根据一个实施例,制造具有纳米尺度或微尺度部分的图像的方法可以包括提供硅晶片,用氧化层涂覆硅晶片,在氧化物层上沉积光致抗蚀剂层,以及 去除光致抗蚀剂的图案部分以暴露氧化物层的图案化部分。 该方法还可以包括去除氧化物的图案化部分中的至少一些,使得氧化物层的图案化部分具有预定的厚度,从而获得预定的可见颜色。 氧化物层的图案化部分可以限定纳米尺度或微尺度部分中的至少一个。