摘要:
Provided are a molecular electronic device and a method of fabricating the molecular electronic device. The molecular electronic device includes a substrate, an organic dielectric thin film formed over the substrate, a molecular active layer formed on the organic dielectric thin film and having a charge trap site, and an electrode formed on the molecular active layer. The organic dielectric thin film may be immobilized on the electrode or a Si layer by a self-assembled method. The organic dielectric thin film may include first and second molecular layers bound together through hydrogen bonds. An organic compound may be self-assembled over the substrate to form the organic dielectric thin film. The organic compound may include an M′-R-T structure, where M′, R and T represent a thiol or silane derivative, a saturated or unsaturated C1 to C20 hydrocarbon group which is substituted or unsubstituted with fluorine (F), and an amino(—NH2) or carboxyl (—COOH) group, respectively.
摘要:
Provided are an electron donor-azo-electron acceptor compound having a thiol-based anchoring group, a method of synthesizing the compound, and a molecular electronic device having a molecular active layer formed of the compound. The compound for forming a molecular electronic device includes an azo compound that has a dinitrothiophene group and an aminobenzene group having thiol derivatives. The compound forms a molecular active layer in the molecular electronic devices. The molecular active layer is self-assembled on an electrode using the thiol derivative in the azo compound as an anchoring group. The molecular active layer in the molecular electronic device forms a switching device switching between an on-state and an off-state in response to a voltage applied to electrodes or a memory device storing a predetermined electric signal in response to a voltage applied to the electrodes.
摘要:
Provided are a molecular electronic device and a method of fabricating the molecular electronic device. The molecular electronic device includes a substrate, an organic dielectric thin film formed over the substrate, a molecular active layer formed on the organic dielectric thin film and having a charge trap site, and an electrode formed on the molecular active layer. The organic dielectric thin film may be immobilized on the electrode or a Si layer by a self-assembled method. The organic dielectric thin film may include first and second molecular layers bound together through hydrogen bonds. An organic compound may be self-assembled over the substrate to form the organic dielectric thin film. The organic compound may include an M′-R-T structure, where M′, R and T represent a thiol or silane derivative, a saturated or unsaturated C1 to C20 hydrocarbon group which is substituted or unsubstituted with fluorine (F), and an amino(—NH2) or carboxyl (—COOH) group, respectively.
摘要:
Provided are a compound for a molecular electronic device which includes a terpyridine-ruthenium organic metal compound including a thiol anchoring group of the formula below, a method of synthesizing the compound and a molecular electronic device including a molecular active layer obtained from the compound. In the formula, R1 and R2 are each a thioacetyl group or a hydrogen atom, at least one of R1 and R2 is a thioacetyl group, and m and n are each integers from 0 to 20. The molecular active layer, which is formed by self-assembling the compound on an electrode surface, composes a switching element and a memory element.
摘要:
Provided are a molecular electronic device and a method of fabricating the molecular electronic device. The molecular electronic device includes a substrate, an organic dielectric thin film formed over the substrate, a molecular active layer formed on the organic dielectric thin film and having a charge trap site, and an electrode formed on the molecular active layer. The organic dielectric thin film may be immobilized on the electrode or a Si layer by a self-assembled method. The organic dielectric thin film may include first and second molecular layers bound together through hydrogen bonds. An organic compound may be self-assembled over the substrate to form the organic dielectric thin film. The organic compound may include an M′-R-T structure, where M′, R and T represent a thiol or silane derivative, a saturated or unsaturated C1 to C20 hydrocarbon group which is substituted or unsubstituted with fluorine (F), and an amino(—NH2) or carboxyl (—COOH) group, respectively.
摘要:
Provided are an electron donor-azo-electron acceptor compound having a thiol-based anchoring group, a method of synthesizing the compound, and a molecular electronic device having a molecular active layer formed of the compound. The compound for forming a molecular electronic device includes an azo compound that has a dinitrothiophene group and an aminobenzene group having thiol derivatives. The compound forms a molecular active layer in the molecular electronic devices. The molecular active layer is self-assembled on an electrode using the thiol derivative in the azo compound as an anchoring group. The molecular active layer in the molecular electronic device forms a switching device switching between an on-state and an off-state in response to a voltage applied to electrodes or a memory device storing a predetermined electric signal in response to a voltage applied to the electrodes.
摘要:
Provided are an electron donor-azo-electron acceptor compound having a thiol-based anchoring group, a method of synthesizing the compound, and a molecular electronic device having a molecular active layer formed of the compound. The compound for forming a molecular electronic device includes an azo compound that has a dinitrothiophene group and an aminobenzene group having thiol derivatives. The compound forms a molecular active layer in the molecular electronic devices. The molecular active layer is self-assembled on an electrode using the thiol derivative in the azo compound as an anchoring group. The molecular active layer in the molecular electronic device forms a switching device switching between an on-state and an off-state in response to a voltage applied to electrodes or a memory device storing a predetermined electric signal in response to a voltage applied to the electrodes.
摘要:
Provided are an electron donor-azo-electron acceptor compound having a thiol-based anchoring group, a method of synthesizing the compound, and a molecular electronic device having a molecular active layer formed of the compound. The compound for forming a molecular electronic device includes an azo compound that has a dinitrothiophene group and an aminobenzene group having thiol derivatives. The compound forms a molecular active layer in the molecular electronic devices. The molecular active layer is self-assembled on an electrode using the thiol derivative in the azo compound as an anchoring group. The molecular active layer in the molecular electronic device forms a switching device switching between an on-state and an off-state in response to a voltage applied to electrodes or a memory device storing a predetermined electric signal in response to a voltage applied to the electrodes.
摘要:
Provided is a method of fabricating a nanoimprint mold which can form sub-100 nm fine pattern structures. The method includes forming patterns on a first substrate using an E-beam lithography (EBL) process, and transferring the patterns formed on the first substrate to a second substrate using a nanoimprint lithography (NIL) process to complete an NIL mold. Accordingly, the method can easily fabricate the nanoimprint mold at low costs on a quartz or glass substrate, which is not suitable for an EBL process to produce sub-100 nm patterns, by utilizing the advantages of the EBL process with a resolution of tens of nanometers.