专利检索 ap:"HO GIL JUNG" 第 1 页

1.

发明申请
SEMICONDUCTOR DEVICE INCLUDING INSULATING LAYERS AND METHOD OF FORMING THE SAME 审中-公开

公开(公告)号：US20180350830A1

公开(公告)日：2018-12-06

申请号：US15816638

申请日：2017-11-17

申请人： YEONG DAE LIM , SEUNG JAE JUNG , JIN YOUNG BANG , IL WOO KIM , HO GIL JUNG

发明人： YEONG DAE LIM , SEUNG JAE JUNG , JIN YOUNG BANG , IL WOO KIM , HO GIL JUNG

IPC分类号： H01L27/11582 , H01L29/06 , H01L27/11568 , H01L29/10

CPC分类号： H01L27/11582 , H01L21/0217 , H01L21/02211 , H01L21/02271 , H01L21/0228 , H01L21/02532 , H01L21/02595 , H01L21/02636 , H01L21/28282 , H01L21/31111 , H01L27/11565 , H01L27/11568 , H01L29/0657 , H01L29/1037

摘要： A semiconductor device includes a substrate, a stacked structure of insulating layers and gate electrodes alternately and repeatedly stacked on the substrate, and a pillar passing through the stacked-layer structure. The insulating layers include lower insulating layers, intermediate insulating layers disposed on the lower insulating layers, and upper insulating layers disposed on the intermediate insulating layers. The lower insulating layers have a hardness less than that of the intermediate insulating layers, and the upper insulating layers have a hardness greater than that of the intermediate insulating layers.

2.

发明授权
Semiconductor device including insulating layers and method of forming the same 有权

公开(公告)号：US10325922B2

公开(公告)日：2019-06-18

申请号：US15816638

申请日：2017-11-17

申请人： Yeong Dae Lim , Seung Jae Jung , Jin Young Bang , Il Woo Kim , Ho Gil Jung

发明人： Yeong Dae Lim , Seung Jae Jung , Jin Young Bang , Il Woo Kim , Ho Gil Jung

IPC分类号： H01L27/11568 , H01L21/02 , H01L29/06 , H01L27/11582 , H01L29/10 , H01L27/11565 , H01L21/28 , H01L21/311

摘要： A semiconductor device includes a substrate, a stacked structure of insulating layers and gate electrodes alternately and repeatedly stacked on the substrate, and a pillar passing through the stacked-layer structure. The insulating layers include lower insulating layers, intermediate insulating layers disposed on the lower insulating layers, and upper insulating layers disposed on the intermediate insulating layers. The lower insulating layers have a hardness less than that of the intermediate insulating layers, and the upper insulating layers have a hardness greater than that of the intermediate insulating layers.