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公开(公告)号：US4060471A
公开(公告)日：1977-11-29
申请号：US724220
申请日：1976-09-17
CPC分类号： C23C14/027 , C23C14/34 , G11B3/46
摘要： A method for depositing a layer in which the concentration of constituent materials varies through its thickness employs a radio frequency sputtering apparatus. The deposition apparatus has a target composed of different component materials for the layer. The substrate is placed within the deposition apparatus and moved to various positions with respect to the target during the deposition.
摘要翻译： 用于沉积构成材料的浓度通过其厚度变化的层的方法采用射频溅射装置。 沉积设备具有由该层的不同组分材料组成的靶。 将衬底放置在沉积设备内并且在沉积期间移动到相对于靶的各个位置。
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公开(公告)号：US4010312A
公开(公告)日：1977-03-01
申请号：US543629
申请日：1975-01-23
摘要： A cermet film includes metal particles in an insulator with the metal particles having an average diameter of from about 30A to about 120A. The cermet film has a high resistivity, and low temperature coefficient of resistivity, and is stable under electric fields of up to 10.sup.5 volts/cm. The cermet film can be formed by co-sputtering the metal and the insulator onto a substrate. The sputtered cermet film is then annealed in a reducing atmosphere whereby its resistivity is increased without a corresponding change in its temperature coefficient of resistivity.
摘要翻译： 金属陶瓷膜包括绝缘体中的金属颗粒，金属颗粒的平均直径为约30A至约120A。 金属陶瓷膜具有高电阻率和低电阻率系数，并且在高达105伏/厘米的电场下是稳定的。 金属陶瓷膜可以通过将金属和绝缘体共溅射到衬底上而形成。 然后将溅射金属陶瓷膜在还原气氛中退火，由此其电阻率增加，而其电阻率温度系数没有相应的变化。
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公开(公告)号：US3985919A
公开(公告)日：1976-10-12
申请号：US573389
申请日：1975-04-30
CPC分类号： C04B41/009 , C04B41/5025 , C04B41/87 , H01C17/08
摘要： A metal oxide vapor, such as tungsten oxide, is reacted with a ceramic material, such as aluminum oxide, at a temperature in the range of from about 1300.degree.C to about 1400.degree.C. The metal oxide vapors diffuse into the ceramic material during the reaction. The ceramic material, which now includes tungsten oxide diffused therein, is then subjected to a reducing atmosphere so as to form a cermet region in the ceramic material.
摘要翻译： 金属氧化物蒸气（例如氧化钨）与陶瓷材料（例如氧化铝）在约1300℃至约1400℃的温度下反应。金属氧化物蒸气在 反应。 然后将包含扩散在其中的氧化钨的陶瓷材料进行还原气氛，以便在陶瓷材料中形成金属陶瓷区域。
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公开(公告)号：US6057182A
公开(公告)日：2000-05-02
申请号：US924799
申请日：1997-09-05
申请人： Lawrence Alan Goodman , Grzegorz Kaganowicz , Lawrence Keith White , Harry Louis Pinch , Ronald Keith Smeltzer
发明人： Lawrence Alan Goodman , Grzegorz Kaganowicz , Lawrence Keith White , Harry Louis Pinch , Ronald Keith Smeltzer
IPC分类号： H01L21/30 , H01L21/336 , H01L21/77 , H01L21/84
CPC分类号： H01L29/66757 , H01L21/3003 , H01L27/1214
摘要： A method of making a liquid crystal display which has a layer of polysilicon on a surface of a substrate, a gate of a conductive material over and insulated from a portion of the polysilicon layer, a layer of an insulating material over the gate, and a metal layer on the insulating layer. The method includes forming a layer of an insulating material over the metal layer and then subjecting the device to a plasma containing hydrogen to diffuse the hydrogen through the insulating layers and the metal layer into the polysilicon layer.
摘要翻译： 一种制造液晶显示器的方法，该液晶显示器在基板的表面上具有多晶硅层，在多晶硅层的一部分上方绝缘的导电材料的栅极，栅极上的绝缘材料层和 绝缘层上的金属层。 该方法包括在金属层上形成绝缘材料层，然后使器件进入含有氢的等离子体，以使氢通过绝缘层和金属层扩散到多晶硅层中。
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公开(公告)号：US4071426A
公开(公告)日：1978-01-31
申请号：US745411
申请日：1976-11-26
摘要： A cermet film includes metal particles in an insulator with the metal particles having an average diameter of from about 30A to about 120A. The cermet film has a high resistivity, and low temperature coefficient of resistivity, and is stable under electric fields of up to 10.sup.5 volts/cm. The cermet film can be formed by co-sputtering the metal and the insulator onto a substrate. The sputtered cermet film is then annealed in a reducing atmosphere whereby its resistivity is increased without a corresponding change in its temperature coefficient of resistivity.
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公开(公告)号：US4013830A
公开(公告)日：1977-03-22
申请号：US578899
申请日：1975-05-19
CPC分类号： G11B9/075
摘要： One end of a support structure of dielectric material tapers to a tip which has a curved bottom surface. A cermet film composed of a conductive material and a dielectric material which adheres well to the support structure is on a portion of the support structure's surface. The concentration of the constituent materials in the cermet film varies through its thickness. The cermet film at the interface with the support structure has a high concentration of dielectric material while the portion of cermet film at its exposed surface has a high conductive material concentration.
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