公开(公告)号：US06181008B2

公开(公告)日：2001-01-30

申请号：US09327797

申请日：1999-06-08

申请人： Leslie Ronald Avery ,  Robert Amantea ,  Lawrence Alan Goodman

发明人： Leslie Ronald Avery ,  Robert Amantea ,  Lawrence Alan Goodman

IPC分类号： H01L2334

CPC分类号： H01L25/18 ,  H01L25/0652 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/15156 ,  H01L2924/15192 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/0401

摘要： An integrated circuit system includes a substrate of an electrical insulating material having a surface. Mounted on the surface of the substrate is an IC, a semiconductor piece having therein a circuit, such as a microprocessor, having a plurality of functional blocks. Also mounted on the substrate are a plurality of power supply chips. Each of the power supply chips is connected through conductors and vias in the substrate to a separate functional block on the IC semiconductor piece. Each of the power supply chips forms part of a circuit, such as a DC-DC converter, which is capable of reducing a voltage supplied thereto to a lower voltage suitable for the particular functional block to which the particular power supply chip is connected. Thus, a single relatively large voltage fed to the power supply chips through conductors on the substrate is reduced by each power supply chip to a lower voltage suitable for the particular functional block of the IC semiconductor piece.

摘要翻译： 集成电路系统包括具有表面的电绝缘材料的基板。 安装在基板的表面上的是IC，其中具有诸如微处理器的电路的半导体片具有多个功能块。 还安装在基板上的是多个电源芯片。 每个电源芯片通过基板中的导体和通孔连接到IC半导体芯片上的单独的功能块。 每个电源芯片形成诸如DC-DC转换器的电路的一部分，其能够将提供给其的电压降低到适合于与特定电源芯片连接的特定功能块的较低电压。 因此，通过基板上的导体馈送到电源芯片的单个相对大的电压被每个电源芯片减小到适合于IC半导体芯片的特定功能块的较低电压。

公开(公告)号：US6057182A

公开(公告)日：2000-05-02

申请号：US924799

申请日：1997-09-05

申请人： Lawrence Alan Goodman ,  Grzegorz Kaganowicz ,  Lawrence Keith White ,  Harry Louis Pinch ,  Ronald Keith Smeltzer

发明人： Lawrence Alan Goodman ,  Grzegorz Kaganowicz ,  Lawrence Keith White ,  Harry Louis Pinch ,  Ronald Keith Smeltzer

IPC分类号： H01L21/30 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84

CPC分类号： H01L29/66757 ,  H01L21/3003 ,  H01L27/1214

摘要： A method of making a liquid crystal display which has a layer of polysilicon on a surface of a substrate, a gate of a conductive material over and insulated from a portion of the polysilicon layer, a layer of an insulating material over the gate, and a metal layer on the insulating layer. The method includes forming a layer of an insulating material over the metal layer and then subjecting the device to a plasma containing hydrogen to diffuse the hydrogen through the insulating layers and the metal layer into the polysilicon layer.

摘要翻译： 一种制造液晶显示器的方法，该液晶显示器在基板的表面上具有多晶硅层，在多晶硅层的一部分上方绝缘的导电材料的栅极，栅极上的绝缘材料层和 绝缘层上的金属层。 该方法包括在金属层上形成绝缘材料层，然后使器件进入含有氢的等离子体，以使氢通过绝缘层和金属层扩散到多晶硅层中。

公开(公告)号：US4094582A

公开(公告)日：1978-06-13

申请号：US733168

申请日：1976-10-18

申请人： Lawrence Alan Goodman

发明人： Lawrence Alan Goodman

IPC分类号： G02F1/1368 ,  G02F1/16 ,  G08B23/00 ,  H01L29/78 ,  H03K17/60

CPC分类号： G02F1/1368

摘要： A field-effect transistor, made with liquid crystal material, is connected to each liquid crystal cell in a liquid crystal matrix display device. The transistors with the display, all made with liquid crystal material, are integrally constructed in one device.

摘要翻译： 用液晶材料制成的场效应晶体管连接到液晶矩阵显示装置中的每个液晶单元。 具有显示器的晶体管全部由液晶材料制成，一体地构成在一个器件中。

公开(公告)号：US3991227A

公开(公告)日：1976-11-09

申请号：US544568

申请日：1975-01-27

申请人： David Emil Carlson ,  Lawrence Alan Goodman

发明人： David Emil Carlson ,  Lawrence Alan Goodman

IPC分类号： C03C17/245 ,  C23C16/503 ,  B05D3/06

CPC分类号： C23C16/503 ,  C03C17/2453

摘要： A D.C. glow discharge is applied to a heated glass substrate coated with a conductive layer in the form of a pattern in an evacuated chamber, to which chamber certain amounts of oxygen and a volatile tin composition have been added. A glass substrate is produced which is coated with a patterned, transparent, conductive coating of tin oxide, wherein the surface region of the glass has been depleted of alkali metal ions.

摘要翻译： 将直流辉光放电施加到涂覆有真空室中图案形式的导电层的加热的玻璃基板上，向其中加入了一定量的氧和挥发性锡组合物。 制造玻璃基板，其涂覆有图案化的，透明的，导电的氧化锡涂层，其中玻璃的表面区域已经耗尽碱金属离子。

公开(公告)号：US4120567A

公开(公告)日：1978-10-17

申请号：US767957

申请日：1977-02-11

申请人： Lawrence Alan Goodman ,  Aaron William Levine ,  Dietrich Meyerhofer

发明人： Lawrence Alan Goodman ,  Aaron William Levine ,  Dietrich Meyerhofer

IPC分类号： C09K19/46 ,  G02F1/13 ,  C09K3/34

CPC分类号： C09K19/46

摘要： Liquid crystal mixtures of liquid crystalline esters, biphenyls and terphenyls have wide useful temperature ranges, fast response times and a small index of refraction anisotropy which can be employed in liquid crystal cells having improved viewing angles.

摘要翻译： 液晶酯，联苯和三联苯的液晶混合物具有广泛的有用的温度范围，快速响应时间和小折射率各向异性，可用于具有改进的视角的液晶单元。

公开(公告)号：US4042293A

公开(公告)日：1977-08-16

申请号：US595836

申请日：1975-07-14

申请人： Joseph John Hanak ,  Ronald Norman Friel ,  Lawrence Alan Goodman

发明人： Joseph John Hanak ,  Ronald Norman Friel ,  Lawrence Alan Goodman

IPC分类号： G02F1/1362 ,  G02F1/13

CPC分类号： G02F1/136277 ,  Y10S359/90

摘要： The device comprises an enclosure including two spaced apart electrodes for applying an electric field through a film of liquid crystal material between the electrodes. Disposed on one of the electrodes, between it and the liquid crystal film, is a semiconductor material layer. The semiconductor layer has a rectifying or non-ohmic contact with the liquid crystal film, and has an ohmic or low resistance contact with the electrode. The layer has a resistance, when the rectifying contact is reverse biased, greater than that of the liquid crystal film, and, when the rectifying contact is forward biased, less than that of the film.

摘要翻译： 该装置包括一个包括两个间隔开的电极的外壳，用于通过电极之间的液晶材料膜施加电场。 在其间的一个电极和液晶膜之间设置半导体材料层。 半导体层具有与液晶膜的整流或非欧姆接触，并且与电极具有欧姆或低电阻接触。 当整流接触反向偏置时，该层具有大于液晶膜的电阻，并且当整流接触正向偏压时，该电阻小于膜的电阻。

公开(公告)号：US07982277B2

公开(公告)日：2011-07-19

申请号：US12464979

申请日：2009-05-13

申请人： Lawrence Alan Goodman

发明人： Lawrence Alan Goodman

IPC分类号： H01L31/00

CPC分类号： H01L27/14687 ,  H01L21/84 ,  H01L27/1464

摘要： A method for fabricating a back-illuminated semiconductor imaging device on an ultra-thin semiconductor-on-insulator wafer (UTSOI) is disclosed. The UTSOI wafer includes a mechanical substrate, an insulator layer, and a seed layer. At least one dopant is applied to the semiconductor substrate. A first portion of an epitaxial layer is grown on the seed layer. A predefined concentration of carbon impurities is introduced into the first portion of the epitaxial layer. A remaining portion of the epitaxial layer is grown. During the epitaxial growth process, the at least one dopant diffuses into the epitaxial layer such that, at completion of the growing of the epitaxial layer, there exists a net dopant concentration profile which has an initial maximum value at an interface between the seed layer and the insulator layer and which decreases monotonically with increasing distance from the interface within at least a portion of at least one of the semiconductor substrate and the epitaxial layer.

摘要翻译： 公开了一种用于在超薄绝缘体上半导体晶片（UTSOI）上制造背照式半导体成像器件的方法。 UTSOI晶片包括机械衬底，绝缘体层和种子层。 至少一种掺杂剂被施加到半导体衬底。 在种子层上生长外延层的第一部分。 将预定浓度的碳杂质引入外延层的第一部分。 生长外延层的剩余部分。 在外延生长过程中，至少一种掺杂剂扩散到外延层中，使得在外延层生长完成时，存在净掺杂剂浓度分布，其在种子层和晶种层之间的界面处具有初始最大值 绝缘体层，并且随着距离至少一个半导体衬底和外延层的至少一部分中的界面的距离的增加而单调减小。

公开(公告)号：US20090294804A1

公开(公告)日：2009-12-03

申请号：US12464979

申请日：2009-05-13

申请人： Lawrence Alan Goodman

发明人： Lawrence Alan Goodman

IPC分类号： H01L31/00 ,  H01L21/02

CPC分类号： H01L27/14687 ,  H01L21/84 ,  H01L27/1464

摘要： A method for fabricating a back-illuminated semiconductor imaging device on an ultra-thin semiconductor-on-insulator wafer (UTSOI) is disclosed. The UTSOI wafer includes a mechanical substrate, an insulator layer, and a seed layer. At least one dopant is applied to the semiconductor substrate. A first portion of an epitaxial layer is grown on the seed layer. A predefined concentration of carbon impurities is introduced into the first portion of the epitaxial layer. A remaining portion of the epitaxial layer is grown. During the epitaxial growth process, the at least one dopant diffuses into the epitaxial layer such that, at completion of the growing of the epitaxial layer, there exists a net dopant concentration profile which has an initial maximum value at an interface between the seed layer and the insulator layer and which decreases monotonically with increasing distance from the interface within at least a portion of at least one of the semiconductor substrate and the epitaxial layer.

摘要翻译： 公开了一种用于在超薄绝缘体上半导体晶片（UTSOI）上制造背照式半导体成像器件的方法。 UTSOI晶片包括机械衬底，绝缘体层和种子层。 至少一种掺杂剂被施加到半导体衬底。 在种子层上生长外延层的第一部分。 将预定浓度的碳杂质引入外延层的第一部分。 生长外延层的剩余部分。 在外延生长过程中，至少一种掺杂剂扩散到外延层中，使得在外延层生长完成时，存在净掺杂剂浓度分布，其在种子层和晶种层之间的界面处具有初始最大值 绝缘体层，并且随着距离至少一个半导体衬底和外延层的至少一部分中的界面的距离的增加而单调减小。

公开(公告)号：US6011330A

公开(公告)日：2000-01-04

申请号：US993292

申请日：1997-12-18

申请人： Lawrence Alan Goodman ,  Ashok Narayan Prabhu

发明人： Lawrence Alan Goodman ,  Ashok Narayan Prabhu

IPC分类号： H01G17/00 ,  H01L23/64 ,  H02M1/00 ,  H02J7/00

CPC分类号： H01L23/642 ,  H02M1/00 ,  H01L2924/09701 ,  H01L2924/16152

摘要： A power supply integrated module includes a metal substrate having a surface and a body of a dielectric material, such as a glass or ceramic, mounted on and bonded to the surface of the substrate. The body is formed of a plurality of layers of the dielectric material bonded together. Areas of a conductive material and a resistive material are coated on the surfaces of the layers of the body to form passive electronic components, such as capacitors, resistors and inductors. At least one transformer is on or in the body. The transformer and passive electronic components are electrically connected by conductive interconnects on the layers of the body and vias of a conductive material extending through the layers of the body to form a power supply integrated circuit. Active electronic components, such as diodes and transistors, may also be mounted on the body and electrically connected in the power supply circuit.

摘要翻译： 电源集成模块包括金属基板，其具有安装在基板的表面上并结合到基板的表面上的电介质材料（例如玻璃或陶瓷）的表面和主体。 本体由多层电介质材料形成，结合在一起。 导电材料和电阻材料的区域涂覆在主体层的表面上以形成无源电子部件，例如电容器，电阻器和电感器。 至少有一个变压器在体内或体内。 变压器和无源电子部件通过主体层上的导电互连和延伸穿过主体层的导电材料的通路电连接，形成电源集成电路。 诸如二极管和晶体管的有源电子部件也可以安装在主体上并电连接在电源电路中。