公开(公告)号：US07326328B2

公开(公告)日：2008-02-05

申请号：US11185004

申请日：2005-07-19

申请人： Heather Diane Hudspeth ,  Ji Ung Lee ,  Reed Roeder Corderman ,  Anping Zhang ,  Renee Bushey Rohling ,  Lauraine Denault ,  Joleyn Eileen Balch

发明人： Heather Diane Hudspeth ,  Ji Ung Lee ,  Reed Roeder Corderman ,  Anping Zhang ,  Renee Bushey Rohling ,  Lauraine Denault ,  Joleyn Eileen Balch

IPC分类号： C25D5/02

CPC分类号： H01J1/304 ,  H01J3/021 ,  H01J9/025

摘要： The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc.) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.

公开(公告)号：US07902736B2

公开(公告)日：2011-03-08

申请号：US11971452

申请日：2008-01-09

申请人： Heather Diane Hudspeth ,  Ji Ung Lee ,  Reed Roeder Corderman ,  Anping Zhang ,  Renee Bushey Rohling ,  Lauraine Denault ,  Joleyn Eileen Balch

发明人： Heather Diane Hudspeth ,  Ji Ung Lee ,  Reed Roeder Corderman ,  Anping Zhang ,  Renee Bushey Rohling ,  Lauraine Denault ,  Joleyn Eileen Balch

IPC分类号： H01J1/62

CPC分类号： H01J1/304 ,  H01J3/021 ,  H01J9/025

摘要： The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc.) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.

摘要翻译： 本发明涉及门控纳米棒场发射器件，其中这种器件具有相对较小的发射极尖对栅极距离，从而提供相对高的发射极尖端密度和低导通电压。 这种方法采用传统的器件处理技术（光刻，蚀刻等）与纳米棒的电化学沉积的组合。 这些方法相对简单，成本效益高，效率高; 并且它们提供适用于X射线成像应用，照明应用，平板场发射显示（FED）应用等的场致发射器件。

公开(公告)号：US07411341B2

公开(公告)日：2008-08-12

申请号：US11835691

申请日：2007-08-08

申请人： Heather Diane Hudspeth ,  Reed Roeder Corderman ,  Renee Bushey Rohling ,  Lauraine Denault

发明人： Heather Diane Hudspeth ,  Reed Roeder Corderman ,  Renee Bushey Rohling ,  Lauraine Denault

IPC分类号： H01J1/30 ,  H01J1/02

CPC分类号： H01J1/304 ,  H01J9/025

摘要： The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc.) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.

摘要翻译： 本发明涉及门控纳米棒场发射器件，其中这种器件具有相对较小的发射极尖对栅极距离，从而提供相对高的发射极尖端密度和低导通电压。 这种方法采用传统的器件处理技术（光刻，蚀刻等）与纳米棒的电化学沉积的组合。 这些方法相对简单，成本效益高，效率高; 并且它们提供适用于X射线成像应用，照明应用，平板场发射显示（FED）应用等的场致发射器件。

公开(公告)号：US20080129178A1

公开(公告)日：2008-06-05

申请号：US11971452

申请日：2008-01-09

申请人： Heather Diane Hudspeth ,  Ji Ung Lee ,  Reed Roeder Corderman ,  Anping Zhang ,  Renee Bushey Rohling ,  Lauraine Denault ,  Joleyn Eileen Balch

发明人： Heather Diane Hudspeth ,  Ji Ung Lee ,  Reed Roeder Corderman ,  Anping Zhang ,  Renee Bushey Rohling ,  Lauraine Denault ,  Joleyn Eileen Balch

IPC分类号： H01J1/02

CPC分类号： H01J1/304 ,  H01J3/021 ,  H01J9/025

摘要： The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc.) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.

摘要翻译： 本发明涉及门控纳米棒场发射器件，其中这种器件具有相对较小的发射极尖对栅极距离，从而提供相对高的发射极尖端密度和低导通电压。 这种方法采用传统的器件处理技术（光刻，蚀刻等）与纳米棒的电化学沉积的组合。 这些方法相对简单，成本效益高，效率高; 并且它们提供适用于X射线成像应用，照明应用，平板场发射显示（FED）应用等的场致发射器件。

公开(公告)号：US07279085B2

公开(公告)日：2007-10-09

申请号：US11185007

申请日：2005-07-19

申请人： Heather Diane Hudspeth ,  Reed Roeder Corderman ,  Renee Bushey Rohling ,  Lauraine Denault

发明人： Heather Diane Hudspeth ,  Reed Roeder Corderman ,  Renee Bushey Rohling ,  Lauraine Denault

IPC分类号： C25D5/02

CPC分类号： H01J1/304 ,  H01J9/025

摘要： The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc.) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.

摘要翻译： 本发明涉及门控纳米棒场发射器件，其中这种器件具有相对较小的发射极尖对栅极距离，从而提供相对高的发射极尖端密度和低导通电压。 这种方法采用传统的器件处理技术（光刻，蚀刻等）与纳米棒的电化学沉积的组合。 这些方法相对简单，成本效益高，效率高; 并且它们提供适用于X射线成像应用，照明应用，平板场发射显示（FED）应用等的场致发射器件。