摘要:
An arrangement for varying the triggering phase of a thyristor or other controllable switch employed to vary the excitation of a sweep deflection circuit during changes in the circuit load is described. The output of a winding of the deflection transformer is converted to a constant-amplitude sawtooth voltage which has a DC component proportional to the amplitude of the then-occurring forward sweep portion of the sweep voltage. A zener diode or other comparison element coupled to the output of a variable voltage divider whose input is fed by the resulting sawtooth voltage generates a trigger pulse for the controllable switch at the instant, during each cycle of the sweep waveform, that the constant-amplitude sawtooth voltage exceeds a predetermined value.
摘要:
The invention relates to a method for producing polycrystalline silicon rods by deposition from the gas phase on a thin rod, wherein one or a plurality of disks consisting of a material having a lower electrical resistivity than the polycrystalline silicon under deposition conditions are introduced above the electrodes and/or below the bridge of the rod pair.
摘要:
The present invention relates to an electrode composed of carbon having at least two different zones, wherein an outer zone (A) forms the base of the electrode and carries one or more inner zones, wherein the innermost zone (B) projects from the zone (A) at the top and has a lower specific thermal conductivity than zone (A).
摘要:
A method of producing a polycrystalline silicon rod is by depositing silicon on a carrier rod and cutting to size a molding produced in the process. In order that the silicon rod is given a rod end which is free of cracks and flaking, the rod is rotated about its longitudinal axis and cut through with a parting tool.
摘要:
A graduation carrier of plastics material with a graduation structure, particularly for a photoelectric position measuring device. The graduation structure is a specially prefabricated lamina which is integrated with the graduation carrier with positive engagement. The free surface of the graduation structure and the free surface of the graduation carrier are located in a plane.
摘要:
A galvano-plastically produced graduation carrier comprising fine perforations located within a perforation zone wherein stability enhancement regions in the form of prominences and depressions in the embodiment are located outside the perforation zone. The stability enhancement regions enhance the ability of the graduation carrier to be self-supporting. The area of the graduation carrier within the perforation zone can therefore be made thinner than other areas of the graduation carrier. This provides a graduation carrier which not only has improved edge sharpness and fineness of the perforations but also a high bending rigidity and improved handleability.
摘要:
A bolometer has a holder and, secured in the same, a meander-shaped bolometer strip carried by the holder and composed of a carrier layer and a conductive layer of electrically conductive material which is atop of and carried by the carrier layer. An absorbent layer may also be provided.
摘要:
An improved, thin layer, metallic diaphragm structure for electron microscopes is disclosed having a very thin sheet member, approximately 0.5 to 1 micron thick, surrounding the aperture which is attached to and supported by a reinforcing member approximately 30 microns thick, set away from the aperture. Both the thin sheet member and the reinforcing member are formed from the same heavy metal, preferably gold. A modified object diaphragm structure is also disclosed which is provided with a meshlike screen extending across the aperture to support electron absorbing elements located in the middle of the aperture. The meshlike elements of the screen are of such a narrow design that they are not resolvable by the electron beam of the microscope.
摘要:
A method for producing polycrystalline silicon rods by deposition from the gas phase on a thin rod, wherein one or a plurality of disks consisting of a material having a lower electrical resistivity than the polycrystalline silicon under deposition conditions are introduced above the electrodes and/or below the bridge of the rod pair.