Arrangement for varying the excitation of a deflection circuit in
response to load changes and the like
    1.
    发明授权
    Arrangement for varying the excitation of a deflection circuit in response to load changes and the like 失效
    用于响应于负载变化等改变偏转电路的激励的布置

    公开(公告)号:US4028588A

    公开(公告)日:1977-06-07

    申请号:US641644

    申请日:1975-12-17

    申请人: Heinz Kraus

    发明人: Heinz Kraus

    CPC分类号: H04N3/223

    摘要: An arrangement for varying the triggering phase of a thyristor or other controllable switch employed to vary the excitation of a sweep deflection circuit during changes in the circuit load is described. The output of a winding of the deflection transformer is converted to a constant-amplitude sawtooth voltage which has a DC component proportional to the amplitude of the then-occurring forward sweep portion of the sweep voltage. A zener diode or other comparison element coupled to the output of a variable voltage divider whose input is fed by the resulting sawtooth voltage generates a trigger pulse for the controllable switch at the instant, during each cycle of the sweep waveform, that the constant-amplitude sawtooth voltage exceeds a predetermined value.

    摘要翻译: 描述了用于改变用于在电路负载变化期间改变扫掠偏转电路的激励的晶闸管或其他可控开关的触发相位的装置。 偏转变换器的绕组的输出被转换成恒幅锯齿波电压,其具有与扫描电压的当时发生的正向扫描部分的幅度成比例的直流分量。 耦合到可变分压器的输出的齐纳二极管或其他比较元件,其输入由所产生的锯齿波电压馈送,在扫描波形的每个周期期间在瞬间产生用于可控开关的触发脉冲,即恒定幅度 锯齿波电压超过预定值。

    METHOD FOR PRODUCING CRACK-FREE POLYCRYSTALLINE SILICON RODS
    2.
    发明申请
    METHOD FOR PRODUCING CRACK-FREE POLYCRYSTALLINE SILICON RODS 有权
    生产无裂纹多晶硅棒的方法

    公开(公告)号:US20110229717A1

    公开(公告)日:2011-09-22

    申请号:US13033237

    申请日:2011-02-23

    申请人: Heinz KRAUS

    发明人: Heinz KRAUS

    IPC分类号: B32B9/00 H01L21/20

    摘要: The invention relates to a method for producing polycrystalline silicon rods by deposition from the gas phase on a thin rod, wherein one or a plurality of disks consisting of a material having a lower electrical resistivity than the polycrystalline silicon under deposition conditions are introduced above the electrodes and/or below the bridge of the rod pair.

    摘要翻译: 本发明涉及一种通过从气相沉积在细棒上制造多晶硅棒的方法,其中在沉积条件下将由具有比多晶硅低的电阻率的材料组成的一个或多个盘导入电极 和/或在杆对的桥下方。

    GRAPHITE ELECTRODE
    3.
    发明申请
    GRAPHITE ELECTRODE 有权
    石墨电极

    公开(公告)号:US20110229658A1

    公开(公告)日:2011-09-22

    申请号:US13044107

    申请日:2011-03-09

    CPC分类号: C01B33/035 H01M4/96

    摘要: The present invention relates to an electrode composed of carbon having at least two different zones, wherein an outer zone (A) forms the base of the electrode and carries one or more inner zones, wherein the innermost zone (B) projects from the zone (A) at the top and has a lower specific thermal conductivity than zone (A).

    摘要翻译: 本发明涉及由具有至少两个不同区域的碳组成的电极,其中外部区域(A)形成电极的基底并且承载一个或多个内部区域,其中最内部区域(B)从该区域突出( A),并且具有比区(A)低的比热导率。

    Method of producing a polycrystalline silicon rod
    4.
    发明授权
    Method of producing a polycrystalline silicon rod 有权
    多晶硅棒的制造方法

    公开(公告)号:US06350313B2

    公开(公告)日:2002-02-26

    申请号:US09803335

    申请日:2001-03-09

    IPC分类号: C30B1500

    CPC分类号: C30B15/00 C30B13/00 C30B29/06

    摘要: A method of producing a polycrystalline silicon rod is by depositing silicon on a carrier rod and cutting to size a molding produced in the process. In order that the silicon rod is given a rod end which is free of cracks and flaking, the rod is rotated about its longitudinal axis and cut through with a parting tool.

    摘要翻译: 制造多晶硅棒的方法是通过在载体棒上沉积硅并切割成在该工艺中生产的模制件的尺寸。 为了使硅棒具有无裂纹和剥落的杆端,杆围绕其纵向轴线旋转并用分型工具切割。

    Graduation carrier of plastics material with a graduation structure and
fresnel zone ring
    5.
    发明授权
    Graduation carrier of plastics material with a graduation structure and fresnel zone ring 失效
    具有研究结构和FRESNEL区域环境的塑料材料研究载体

    公开(公告)号:US5126560A

    公开(公告)日:1992-06-30

    申请号:US596466

    申请日:1990-10-12

    申请人: Heinz Kraus

    发明人: Heinz Kraus

    IPC分类号: G01D5/36 G01D5/347

    CPC分类号: G01D5/34707

    摘要: A graduation carrier of plastics material with a graduation structure, particularly for a photoelectric position measuring device. The graduation structure is a specially prefabricated lamina which is integrated with the graduation carrier with positive engagement. The free surface of the graduation structure and the free surface of the graduation carrier are located in a plane.

    摘要翻译: 具有刻度结构的塑料分级载体,特别适用于光电位置测量装置。 毕业结构是一个特殊的预制板,与毕业承运人结合积极参与。 刻度结构的自由表面和刻度载体的自由表面位于平面中。

    Self-supporting graduation carrier
    6.
    发明授权
    Self-supporting graduation carrier 失效
    自主毕业承运人

    公开(公告)号:US4700482A

    公开(公告)日:1987-10-20

    申请号:US821408

    申请日:1986-01-22

    申请人: Heinz Kraus

    发明人: Heinz Kraus

    CPC分类号: G01B3/02

    摘要: A galvano-plastically produced graduation carrier comprising fine perforations located within a perforation zone wherein stability enhancement regions in the form of prominences and depressions in the embodiment are located outside the perforation zone. The stability enhancement regions enhance the ability of the graduation carrier to be self-supporting. The area of the graduation carrier within the perforation zone can therefore be made thinner than other areas of the graduation carrier. This provides a graduation carrier which not only has improved edge sharpness and fineness of the perforations but also a high bending rigidity and improved handleability.

    摘要翻译: 包括位于穿孔区域内的精细穿孔的电流 - 塑性生成的分级载体,其中在该实施例中突起和凹陷形式的稳定性增强区域位于穿孔区域的外侧。 稳定性增强区域增强了毕业载体自支撑的能力。 因此,穿孔区域内的分度载体的面积可以比分度载体的其他区域薄。 这提供了一种渐变载体,其不仅具有改善的边缘锐度和穿孔的细度,而且具有高的弯曲刚度和改善的可操作性。

    Bolometer
    7.
    发明授权
    Bolometer 失效
    测风仪

    公开(公告)号:US4349808A

    公开(公告)日:1982-09-14

    申请号:US147842

    申请日:1980-05-08

    申请人: Heinz Kraus

    发明人: Heinz Kraus

    IPC分类号: G01J5/02 G01J5/20 H01L31/08

    CPC分类号: G01J5/20

    摘要: A bolometer has a holder and, secured in the same, a meander-shaped bolometer strip carried by the holder and composed of a carrier layer and a conductive layer of electrically conductive material which is atop of and carried by the carrier layer. An absorbent layer may also be provided.

    摘要翻译: 测辐射热计具有保持器,并且固定在保持器上并由托架层和导电材料的导电层构成的弯曲形状的测辐射热条,该导电层位于载体层的顶部并承载着。 还可以提供吸收层。

    Electron-optically radiatable structure
    8.
    发明授权
    Electron-optically radiatable structure 失效
    电子光学可辐射结构

    公开(公告)号:US4075497A

    公开(公告)日:1978-02-21

    申请号:US645924

    申请日:1975-12-31

    申请人: Heinz Kraus

    发明人: Heinz Kraus

    IPC分类号: G21K1/02 H01J37/09 G21K1/00

    CPC分类号: G21K1/02 H01J37/09

    摘要: An improved, thin layer, metallic diaphragm structure for electron microscopes is disclosed having a very thin sheet member, approximately 0.5 to 1 micron thick, surrounding the aperture which is attached to and supported by a reinforcing member approximately 30 microns thick, set away from the aperture. Both the thin sheet member and the reinforcing member are formed from the same heavy metal, preferably gold. A modified object diaphragm structure is also disclosed which is provided with a meshlike screen extending across the aperture to support electron absorbing elements located in the middle of the aperture. The meshlike elements of the screen are of such a narrow design that they are not resolvable by the electron beam of the microscope.

    Method for producing crack-free polycrystalline silicon rods
    10.
    发明授权
    Method for producing crack-free polycrystalline silicon rods 有权
    无裂纹多晶硅棒的制造方法

    公开(公告)号:US09023426B2

    公开(公告)日:2015-05-05

    申请号:US13033237

    申请日:2011-02-23

    申请人: Heinz Kraus

    发明人: Heinz Kraus

    摘要: A method for producing polycrystalline silicon rods by deposition from the gas phase on a thin rod, wherein one or a plurality of disks consisting of a material having a lower electrical resistivity than the polycrystalline silicon under deposition conditions are introduced above the electrodes and/or below the bridge of the rod pair.

    摘要翻译: 一种通过从气相沉积在细棒上制造多晶硅棒的方法,其中在沉积条件下由电阻率低于多晶硅的材料组成的一个或多个盘被引入电极和/或下面 杆对的桥梁。