公开(公告)号：US20100297832A1

公开(公告)日：2010-11-25

申请号：US12782090

申请日：2010-05-18

Applicant: Yoshinori IMAI ,  Hideji SHIBATA ,  Takafumi SASAKI

Inventor： Yoshinori IMAI ,  Hideji SHIBATA ,  Takafumi SASAKI

IPC: H01L21/205 ,  C23C16/32 ,  C23C16/455

CPC classification number: H01L21/205 ,  C23C16/325 ,  C23C16/4401 ,  C23C16/45574 ,  C30B25/14 ,  C30B25/165 ,  C30B29/36 ,  H01L21/02529 ,  H01L21/0262

Abstract: Provided is a substrate processing apparatus, a semiconductor device manufacturing method, and a substrate manufacturing method. The substrate processing apparatus comprises: a reaction chamber configured to process substrates; a first gas supply system configured to supply at least a silicon-containing gas and a chlorine-containing gas or at least a gas containing silicon and chlorine; a first gas supply unit connected to the first gas supply system; a second gas supply system configured to supply at least a reducing gas; a second gas supply unit connected to the second gas supply system; a third gas supply system configured to supply at least a carbon-containing gas and connected to at least one of the first gas supply unit and the second gas supply unit; and a control unit configured to control the first to third gas supply systems.

Abstract translation: 提供了一种基板处理装置，半导体装置制造方法和基板制造方法。 基板处理装置包括：被配置为处理基板的反应室; 配置为至少提供含硅气体和含氯气体或至少含有硅和氯的气体的第一气体供给系统; 连接到第一气体供应系统的第一气体供应单元; 构造成供给至少一种还原气体的第二气体供给系统; 连接到第二气体供应系统的第二气体供应单元; 第三气体供给系统，被配置为至少提供含碳气体，并连接到所述第一气体供给单元和所述第二气体供给单元中的至少一个; 以及控制单元，被配置为控制所述第一至第三气体供应系统。