公开(公告)号：US07517745B2

公开(公告)日：2009-04-14

申请号：US11377860

申请日：2006-03-17

申请人： Hideji Tsujii

发明人： Hideji Tsujii

IPC分类号： H01L21/338

CPC分类号： H01L29/66659 ,  H01L21/2815 ,  H01L27/11 ,  H01L27/1104 ,  H01L29/7835 ,  Y10S257/90

摘要： A semiconductor device includes a gate insulating film which is formed on the major surface of a semiconductor substrate, a gate electrode which is formed on the gate insulating film, a first offset-spacer which is formed in contact with one side surface of the gate electrode, a first spacer which is formed in contact with the other side surface of the gate electrode, a second spacer which is formed in contact with the first offset-spacer, and source and drain regions which are formed apart from each other in the major surface of the semiconductor substrate below the first and second spacers so as to sandwich the gate electrode and the first offset-spacer. The source region is formed at a position deeper than the drain region. The dopant concentration of the source region is higher than that of the drain region.

公开(公告)号：US20090155973A1

公开(公告)日：2009-06-18

申请号：US12388602

申请日：2009-02-19

申请人： Hideji TSUJII

发明人： Hideji TSUJII

IPC分类号： H01L21/336

CPC分类号： H01L29/66659 ,  H01L21/2815 ,  H01L27/11 ,  H01L27/1104 ,  H01L29/7835 ,  Y10S257/90

摘要： A semiconductor device includes a gate insulating film which is formed on the major surface of a semiconductor substrate, a gate electrode which is formed on the gate insulating film, a first offset-spacer which is formed in contact with one side surface of the gate electrode, a first spacer which is formed in contact with the other side surface of the gate electrode, a second spacer which is formed in contact with the first offset-spacer, and source and drain regions which are formed apart from each other in the major surface of the semiconductor substrate below the first and second spacers so as to sandwich the gate electrode and the first offset-spacer. The source region is formed at a position deeper than the drain region. The dopant concentration of the source region is higher than that of the drain region.

摘要翻译： 半导体器件包括形成在半导体衬底的主表面上的栅极绝缘膜，形成在栅极绝缘膜上的栅电极，形成为与栅电极的一个侧表面接触的第一偏移间隔物 形成为与栅电极的另一侧表面接触的第一间隔物，与第一偏移间隔物接触形成的第二间隔物，以及在主表面彼此分开形成的源极和漏极区域 在第一和第二间隔物之下的半导体衬底，以夹持栅电极和第一偏移间隔物。 源极区域形成在比漏极区域更深的位置处。 源极区域的掺杂剂浓度高于漏极区域的掺杂剂浓度。

公开(公告)号：US07042050B2

公开(公告)日：2006-05-09

申请号：US10885756

申请日：2004-07-08

申请人： Hideji Tsujii

发明人： Hideji Tsujii

IPC分类号： H01L29/78

CPC分类号： H01L29/66659 ,  H01L21/2815 ,  H01L27/11 ,  H01L27/1104 ,  H01L29/7835 ,  Y10S257/90

摘要： A semiconductor device includes a gate insulating film which is formed on the major surface of a semiconductor substrate, a gate electrode which is formed on the gate insulating film, a first offset-spacer which is formed in contact with one side surface of the gate electrode, a first spacer which is formed in contact with the other side surface of the gate electrode, a second spacer which is formed in contact with the first offset-spacer, and source and drain regions which are formed apart from each other in the major surface of the semiconductor substrate below the first and second spacers so as to sandwich the gate electrode and the first offset-spacer. The source region is formed at a position deeper than the drain region. The dopant concentration of the source region is higher than that of the drain region.

公开(公告)号：US20110227044A1

公开(公告)日：2011-09-22

申请号：US13046940

申请日：2011-03-14

申请人： Shigeru Kawanaka ,  Kanna Adachi ,  Toshitaka Miyata ,  Hideji Tsujii

发明人： Shigeru Kawanaka ,  Kanna Adachi ,  Toshitaka Miyata ,  Hideji Tsujii

IPC分类号： H01L29/08 ,  B82Y99/00

CPC分类号： H01L29/78684 ,  B82Y10/00 ,  H01L29/1606 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/45 ,  H01L29/778 ,  H01L29/7839

摘要： In one embodiment, a transistor includes: a substrate; a source electrode formed on the substrate; a drain electrode formed on the substrate; a graphene film formed between the source electrode and the drain electrode, the graphene film having a semiconductor region including a source side end and a conductor region including a drain side end, a width of the source side end of the graphene film in a channel width direction being narrower than a width of the drain side end of the graphene film in the channel width direction; and a gate electrode formed via a gate insulating film on the semiconductor region of the graphene film and the conductor region of the graphene film. The source electrode is connected to the source side end of the graphene film with a Schottky contact, and the drain electrode is connected to the drain side end of the graphene film with an ohmic contact.

摘要翻译： 在一个实施例中，晶体管包括：衬底; 形成在所述基板上的源电极; 形成在所述基板上的漏电极; 形成在源电极和漏电极之间的石墨烯膜，所述石墨烯膜具有包括源极侧端部和包括漏极侧端部的导体区域的半导体区域，所述石墨烯膜的源极侧端部的宽度在沟道宽度 方向比通道宽度方向上的石墨烯膜的漏极侧端部的宽度窄; 以及在石墨烯膜的半导体区域和石墨烯膜的导体区域上经由栅极绝缘膜形成的栅电极。 源电极以肖特基接触连接到石墨烯膜的源侧端，并且漏电极以欧姆接触连接到石墨烯膜的漏极侧端。

公开(公告)号：US07638399B2

公开(公告)日：2009-12-29

申请号：US12388602

申请日：2009-02-19

申请人： Hideji Tsujii

发明人： Hideji Tsujii

IPC分类号： H01L21/336

CPC分类号： H01L29/66659 ,  H01L21/2815 ,  H01L27/11 ,  H01L27/1104 ,  H01L29/7835 ,  Y10S257/90

摘要： A semiconductor device includes a gate insulating film which is formed on the major surface of a semiconductor substrate, a gate electrode which is formed on the gate insulating film, a first offset-spacer which is formed in contact with one side surface of the gate electrode, a first spacer which is formed in contact with the other side surface of the gate electrode, a second spacer which is formed in contact with the first offset-spacer, and source and drain regions which are formed apart from each other in the major surface of the semiconductor substrate below the first and second spacers so as to sandwich the gate electrode and the first offset-spacer. The source region is formed at a position deeper than the drain region. The dopant concentration of the source region is higher than that of the drain region.

摘要翻译： 半导体器件包括形成在半导体衬底的主表面上的栅极绝缘膜，形成在栅极绝缘膜上的栅电极，形成为与栅电极的一个侧表面接触的第一偏移间隔物 形成为与栅电极的另一侧表面接触的第一间隔物，与第一偏移间隔物接触形成的第二间隔物，以及在主表面彼此分开形成的源极和漏极区域 在第一和第二间隔物之下的半导体衬底，以夹持栅电极和第一偏移间隔物。 源极区域形成在比漏极区域更深的位置处。 源极区域的掺杂剂浓度高于漏极区域的掺杂剂浓度。

公开(公告)号：US20060160285A1

公开(公告)日：2006-07-20

申请号：US11377860

申请日：2006-03-17

申请人： Hideji Tsujii

发明人： Hideji Tsujii

IPC分类号： H01L21/338

CPC分类号： H01L29/66659 ,  H01L21/2815 ,  H01L27/11 ,  H01L27/1104 ,  H01L29/7835 ,  Y10S257/90

摘要： A semiconductor device includes a gate insulating film which is formed on the major surface of a semiconductor substrate, a gate electrode which is formed on the gate insulating film, a first offset-spacer which is formed in contact with one side surface of the gate electrode, a first spacer which is formed in contact with the other side surface of the gate electrode, a second spacer which is formed in contact with the first offset-spacer, and source and drain regions which are formed apart from each other in the major surface of the semiconductor substrate below the first and second spacers so as to sandwich the gate electrode and the first offset-spacer. The source region is formed at a position deeper than the drain region. The dopant concentration of the source region is higher than that of the drain region.

公开(公告)号：US20050205927A1

公开(公告)日：2005-09-22

申请号：US10885756

申请日：2004-07-08

申请人： Hideji Tsujii

发明人： Hideji Tsujii

IPC分类号： H01L27/11 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8244 ,  H01L29/76 ,  H01L29/78

CPC分类号： H01L29/66659 ,  H01L21/2815 ,  H01L27/11 ,  H01L27/1104 ,  H01L29/7835 ,  Y10S257/90

摘要： A semiconductor device includes a gate insulating film which is formed on the major surface of a semiconductor substrate, a gate electrode which is formed on the gate insulating film, a first offset-spacer which is formed in contact with one side surface of the gate electrode, a first spacer which is formed in contact with the other side surface of the gate electrode, a second spacer which is formed in contact with the first offset-spacer, and source and drain regions which are formed apart from each other in the major surface of the semiconductor substrate below the first and second spacers so as to sandwich the gate electrode and the first offset-spacer. The source region is formed at a position deeper than the drain region. The dopant concentration of the source region is higher than that of the drain region.

摘要翻译： 半导体器件包括形成在半导体衬底的主表面上的栅极绝缘膜，形成在栅极绝缘膜上的栅电极，形成为与栅电极的一个侧表面接触的第一偏移间隔物 形成为与栅电极的另一侧表面接触的第一间隔物，与第一偏移间隔物接触形成的第二间隔物，以及在主表面彼此分开形成的源极和漏极区域 在第一和第二间隔物之下的半导体衬底，以夹持栅电极和第一偏移间隔物。 源极区域形成在比漏极区域更深的位置处。 源极区域的掺杂剂浓度高于漏极区域的掺杂剂浓度。