公开(公告)号：US07045415B2

公开(公告)日：2006-05-16

申请号：US10902579

申请日：2004-07-30

申请人： Takashi Yoshitomi ,  Tatsuya Ohguro ,  Ryoji Hasumi ,  Hideki Kimijima ,  Takashi Yamaguchi ,  Masahiro Inohara

发明人： Takashi Yoshitomi ,  Tatsuya Ohguro ,  Ryoji Hasumi ,  Hideki Kimijima ,  Takashi Yamaguchi ,  Masahiro Inohara

IPC分类号： H01L21/8242

CPC分类号： H01L28/60 ,  H01L27/0629 ,  H01L27/0805

摘要： At present, Cu (copper) is being used as a wiring material. In an RF-CMOS device as a combination of an RF analog device and CMOS logic device, two electrodes of a MIM capacitor are formed from Cu having a large diffusion coefficient. To prevent Cu from diffusing to the capacitor insulating film of the MIM capacitor, diffusion prevention films having a function of preventing diffusion of Cu are interposed between the capacitor insulating film and the two electrodes. As a result, Cu forming the electrodes does not diffuse to the capacitor insulating film.

摘要翻译： 目前，Cu（铜）被用作布线材料。 在作为RF模拟装置和CMOS逻辑装置的组合的RF-CMOS装置中，MIM电容器的两个电极由具有大扩散系数的Cu形成。 为了防止Cu向MIM电容器的电容器绝缘膜扩散，具有防止扩散的功能的扩散防止膜插入在电容器绝缘膜和两个电极之间。 结果，形成电极的Cu不扩散到电容器绝缘膜。

公开(公告)号：US20050001255A1

公开(公告)日：2005-01-06

申请号：US10902579

申请日：2004-07-30

申请人： Takashi Yoshitomi ,  Tatsuya Ohguro ,  Ryoji Hasumi ,  Hideki Kimijima ,  Takashi Yamaguchi ,  Masahiro Inohara

发明人： Takashi Yoshitomi ,  Tatsuya Ohguro ,  Ryoji Hasumi ,  Hideki Kimijima ,  Takashi Yamaguchi ,  Masahiro Inohara

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L27/06 ,  H01L27/08 ,  H01L27/108

CPC分类号： H01L28/60 ,  H01L27/0629 ,  H01L27/0805

摘要： At present, Cu (copper) is being used as a wiring material. In an RF-CMOS device as a combination of an RF analog device and CMOS logic device, two electrodes of a MIM capacitor are formed from Cu having a large diffusion coefficient. To prevent Cu from diffusing to the capacitor insulating film of the MIM capacitor, diffusion prevention films having a function of preventing diffusion of Cu are interposed between the capacitor insulating film and the two electrodes. As a result, Cu forming the electrodes does not diffuse to the capacitor insulating film.

公开(公告)号：US06894331B2

公开(公告)日：2005-05-17

申请号：US09734658

申请日：2000-12-13

申请人： Takashi Yoshitomi ,  Tatsuya Ohguro ,  Ryoji Hasumi ,  Hideki Kimijima ,  Takashi Yamaguchi ,  Masahiro Inohara

发明人： Takashi Yoshitomi ,  Tatsuya Ohguro ,  Ryoji Hasumi ,  Hideki Kimijima ,  Takashi Yamaguchi ,  Masahiro Inohara

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L27/06 ,  H01L27/08 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L28/60 ,  H01L27/0629 ,  H01L27/0805

摘要： At present, Cu (copper) is being used as a wiring material. In an RF-CMOS device as a combination of an RF analog device and CMOS logic device, two electrodes of a MIM capacitor are formed from Cu having a large diffusion coefficient. To prevent Cu from diffusing to the capacitor insulating film of the MIM capacitor, diffusion prevention films having a function of preventing diffusion of Cu are interposed between the capacitor insulating film and the two electrodes. As a result, Cu forming the electrodes does not diffuse to the capacitor insulating film.

摘要翻译： 目前，Cu（铜）被用作布线材料。 在作为RF模拟装置和CMOS逻辑装置的组合的RF-CMOS装置中，MIM电容器的两个电极由具有大扩散系数的Cu形成。 为了防止Cu向MIM电容器的电容器绝缘膜扩散，具有防止扩散的功能的扩散防止膜插入电容器绝缘膜和两个电极之间。 结果，形成电极的Cu不扩散到电容器绝缘膜。