公开(公告)号：US4719498A

公开(公告)日：1988-01-12

申请号：US734319

申请日：1985-05-14

申请人： Osamu Wada ,  Tatsuyuki Sanada ,  Shuichi Miura ,  Hideki Machida ,  Shigenobu Yamakoshi ,  Teruo Sakurai

发明人： Osamu Wada ,  Tatsuyuki Sanada ,  Shuichi Miura ,  Hideki Machida ,  Shigenobu Yamakoshi ,  Teruo Sakurai

IPC分类号： H01L21/263 ,  H01L21/308 ,  H01L21/8252 ,  H01L23/528 ,  H01L27/144 ,  H01L27/15 ,  H01S5/026 ,  H01L27/14 ,  H01L31/00

CPC分类号： H01L23/5283 ,  H01L21/2633 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/3083 ,  H01L21/3086 ,  H01L21/8252 ,  H01L27/1443 ,  H01L27/15 ,  H01S5/0261 ,  H01L2924/0002 ,  Y10S148/051 ,  Y10S148/111 ,  Y10S148/161 ,  Y10S438/978

摘要： A semiconductor device including a substrate having a low substrate surface formed in the substrate with a first gentle slope from the substrate surface; a single crystalline layer formed on the low substrate surface nearly level with the substrate surface and having a gentle slope facing the first gentle slope; an optical semiconductor element is constructed using the single crystalline layer. An electronic semiconductor element is constructed using the substrate surface. A wiring layer connects electrodes of the optical semiconductor element and the electronic semiconductor element through the first and the second gentle slopes.

摘要翻译： 一种半导体器件，包括：衬底，其具有在衬底中形成的具有低衬底表面的衬底，其具有来自衬底表面的第一缓和斜率; 在低衬底表面上形成的单晶层与衬底表面几乎水平并且具有面向第一平缓斜面的平缓坡度; 使用单晶层构造光半导体元件。 使用基板表面构造电子半导体元件。 布线层通过第一和第二平缓斜面连接光学半导体元件的电极和电子半导体元件。

公开(公告)号：US5001080A

公开(公告)日：1991-03-19

申请号：US112305

申请日：1987-10-26

申请人： Osamu Wada ,  Tatsuyuki Sanada ,  Shuichi Miura ,  Hideki Machida ,  Shigenobu Yamakoshi ,  Teruo Sakurai

发明人： Osamu Wada ,  Tatsuyuki Sanada ,  Shuichi Miura ,  Hideki Machida ,  Shigenobu Yamakoshi ,  Teruo Sakurai

IPC分类号： H01L21/263 ,  H01L21/308 ,  H01L21/8252 ,  H01L23/528 ,  H01L27/144 ,  H01L27/15 ,  H01S5/026

CPC分类号： H01L23/5283 ,  H01L21/2633 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/3083 ,  H01L21/3086 ,  H01L21/8252 ,  H01L27/1443 ,  H01L27/15 ,  H01S5/0261 ,  H01L2924/0002 ,  Y10S148/051 ,  Y10S148/111 ,  Y10S148/161 ,  Y10S438/978

摘要： A semiconductor device including a substrate having a low substrate surface formed in the substrate with a first gentle slope from the substrate surface; a single crystalline layer formed on the low substrate surface nearly level with the substrate surface and having a gentle slope facing the first gentle slope; an optical semiconductor element is constructed using the single crystalline layer. An electronic semiconductor element is constructed using the substrate surface. A wiring layer connects electrodes of the optical semiconductor element and the electronic semiconductor element through the first and the second gentle slopes.